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IGBT Modules
Features
Low VCE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit
Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply
Continuous
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake
1 device
Converter
Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 Nm (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=50A VGE=15V RG=24 IF=50A chip terminal Min.
7MBR50SB120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.3 2.7 6000 0.35 0.25 0.1 0.45 0.08 2.3 2.5 1.2 0.6 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Inverter
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage
Converter
Thermistor
IF=50A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=25A, VGE=15V chip terminal VCC=600V IC=25A VGE=15V RG=51 VR=1200V IF=50A chip terminal VR=1600V T=25C T=100C T=25/50C
2.1 2.25 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
mA V mA K
465 3305
Rth(j-c)
C/W
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
[T h e rm is to r]
8
2 0 (G u) 1 8 (G v) 1 6 (G w )
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
7MBR50SB120
Tj= 25 C (typ.)
VGE= 20V
15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
80
80
10V 60
60
10V
40
40
20
20 8V 8V
100
Tj= 25 C
Collector current : Ic [ A ]
80
60
40
20
C
25
10000 800 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ]
600
15
1000
400
10
Coes Cres
200
0 500
IGBT Modules
7MBR50SB120
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24, Tj=25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24, Tj=125C
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
ton
ton tr
tr
tf 100
100 tf
50 0 20 40 Collector current : Ic [ A ] 60 80
50 0 20 40 Collector current : Ic [ A ] 60 80
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24
ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ]
12
Eon(125 C)
10
1000
Eon(25 C)
500
Eoff(125 C)
Eoff(25 C) Err(125 C)
o
100
tf
2 Err(25 C)
o
50 10 50 100
]
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 30 Collector current : Ic [ A ] Eoff Err 10 50 100
]
100
80
20
60
40
10 20
0 Gate resistance : Rg [
0 500 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR50SB120
Tj=125 C 100
Tj=25 C trr(125 C) Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ]
o
Forward current : IF [ A ]
80
100 trr(25 C)
o
60
40
Irr(125 C)
Irr(25 C)
20
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 20 40 Forward current : IF [ A ] 60 80
100
Tj= 25 C
Tj= 125 C
Forward current : IF [ A ]
80
60
40
20
0 0.0
0.4
0.8
1.2
1.6
2.0
0.1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
20
40
60
80
o
100
120
140
160
180
Temperature [
C]
IGBT Modules
7MBR50SB120
Tj= 25 C (typ.)
VGE= 20V 50
15V
12V 50
VGE= 20V
15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
40
40
10V 30
30
10V
20
20
10
10 8V 8V
50
Tj= 25 C
Collector current : Ic [ A ]
40
30
20
10
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies
600
15
1000
400
10
200
0 250
IGBT Modules
Outline Drawings, mm
7MBR50SB120
M712
94.50.3 19.05
17 16
15.24
15 14
3.81
4=15.24
10
11.5
+0.5 0
19.697
3.81 99.60.3
9
22
+0.5 0
7
11.665
3.81
24
4.198
4.055
14.995
15.24
15.24
15.24
15.24
15.24
A A 22.86
1.50.3
0.4
2.50.1
0.80.2
2.10.1
3.50.5
1.10.3
Section A-A
2.90.3 6.50.5
20.51 171
10.2
60.3
1.150.2
57.50.3
3.81
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