MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

BCR1AM-12

OUTLINE DRAWING
5.0 MAX 4.4

Dimensions in mm

VOLTAGE CLASS TYPE NAME

3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL

CIRCUMSCRIBE CIRCLE 0.7

1.25 1.25

1.3

12.5 MIN

5.0 MAX
1.0 10 0.41 1 0.1 6 1 0.23

IT (RMS) ........................................................................ 1A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # ..................................................................... 10mA

1 3 2

JEDEC : TO-92

APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications

MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 12 600 720 Unit V V

Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg

Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value

Conditions Commercial frequency, sine full wave 360 conduction, Tc=56C V4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Ratings

40 ~ +125 40 ~ +125

V1. Gate open.

Feb.1999

3.9 MAX
Unit A A A2s W W V A C C g

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # $ ! @ # $ Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD =6V, RL=6, RG=330 Tj=25C, VD =6V, RL=6, RG=330 Test conditions Tj=125C, V DRM applied Tc=25C, ITM=1.5A, Instantaneous measurement Limits Min. 0.1
V3

Typ.

Max. 1.0 1.6 2.0 2.0 2.0 2.0 5 5 5 10 50

Unit mA V V V V V mA mA mA mA V C/ W V/s

V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.

Voltage class

VDRM (V)

(dv/dt) c Min. Unit Test conditions

Commutating voltage and current waveforms (inductive load)

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME VD

1. Junction temperature Tj =125C 12 600 2 V/s 2. Rate of decay of on-state commutating current (di/dt)c=0.5A/ms 3. Peak off-state voltage VD =400V

TIME

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS 102 TC = 25C

RATED SURGE ON-STATE CURRENT 10

SURGE ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

7 5 3 2

101 7 5 3 2 100 7 5 3 2 101 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)

2 0 100

2 3 4 5 7 101

2 3 4 5 7 102

CONDUCTION TIME (CYCLES AT 60Hz)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

GATE CHARACTERISTICS

GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE

100 (%)

GATE VOLTAGE (V)

100 7 5 IFGT I 3 IRGT I 2 IRGT III 101 7 5 3 2

IGM = 1A

GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)

101 7 5 3 2

PGM = 1W VGM = 6V PG(AV) = 0.1W

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

IFGT I, IRGT I

IFGT III

VGD = 0.1V

IRGT III, IFGT III

102 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE

MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

TRANSIENT THERMAL IMPEDANCE (C/W)

102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 100 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)

100 (%)

VFGT I, VRGT I

JUNCTION TO CASE

VRGT III, VFGT III

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

MAXIMUM ON-STATE POWER DISSIPATION

ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS

ON-STATE POWER DISSIPATION (W)

2.0

1.6

CASE TEMPERATURE (C)

140 120 100 80 60 40 20 0 0

1.2

0.8

360 CONDUCTION RESISTIVE, INDUCTIVE LOADS

360 CONDUCTION

0.4

0.4

0.8

1.2

1.6

2.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)

RMS ON-STATE CURRENT (A)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

AMBIENT TEMPERATURE (C)

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION 120 NO FINS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) RESISTIVE, INDUCTIVE LOADS

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE
LACHING CURRENT (mA)

LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2

HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)

,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,

DISTRIBUTION
+ T2 , G+ TYPICAL T2 , G T2 , G+ EXAMPLE

100 (%)

+ T2 , G TYPICAL EXAMPLE

100 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

100 (%)

BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C

160 140

TYPICAL EXAMPLE

BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )

BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)

120 100 80 60 40 20 0 60 40 20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C)

120 100 80 60 III QUADRANT 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)

COMMUTATION CHARACTERISTICS 101 TC = 125C 7 TYPICAL EXAMPLE IT = 1A 5 = 500s 4 VD = 200V 3 2 III QUADRANT MINIMUM CHARAC100 TERISTICS 7 VALUE 5 4 I QUADRANT 3 2 101 1 10 2 3 4 5 7 100 2 3 4 5 7 101 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10
100 (%)

GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE

GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)

IFGT I IFGT III IRGT III IRGT I

2 3 4 5 7 101

2 3 4 5 7 102

RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)

GATE CURRENT PULSE WIDTH (s)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6

6V V

A RG

6V V

A RG

TEST PROCEDURE 1 6

TEST PROCEDURE 2 6

6V V

A RG

6V V

A RG

TEST PROCEDURE 3

TEST PROCEDURE 4

Feb.1999

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