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Q1. (a) Define and explain the following terms in respect of PN Junction.
(i) Depletion Layer (ii) Barrier Potential (iii) AC&DC Resistance
(vi) PIV (v) Ripple Factor (VI) Diffusition &Transition Capacitance
(b) Draw and explain the V-I characteristics of PN Diode with the help of current
Equation.
Q2. (a) Explain about Ideal and Practical Diode with proper symbol &its
characteristics.
(b) List the applications of PN diode.
( c) Explain the difference of N-type and P-type Extrinsic Semiconductor.
Q3. (a) Calculate Forward Current IF for the silicon diode with dynamic resistance
Rd=0.25Ω in the circuit below:
(Given: si diode VT=0.7v) [Ans :IF =78.04mA]
Fig1
R1 1B
10k
V1 D1
1.5dc DIODE
D 1
I=?
D 2
D IO D E
V 1 I=?
10V=Vi R 1
1k
D IO D E 1B
Fig:2
(c) Find VA &I. (D1&D2=Si Diode)
[Ans:VA=13.6V,I=1.924mA]
D 1 D 2
Va=?
V1 Si si
15V=Vi R 1
7K
Fig3
Q4. (a)Explain the working of Half Wave &Full Wave Rectifier with diagram &
Waveforms.
(b) A full wave Rectifier uses a diode with forward resistance of 1Ω. The
transformer secondary is centre tapped with output 10-0-10 V RMS and has resistance
of 5Ω for each half section.