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FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) D Advanced High Cell Density Process
0.020 @ VGS = - 10 V - 9.1 APPLICATIONS
- 30
0.035 @ VGS = - 4.5 V - 6.9 D Load Switches
D Battery Switch
S
SO-8
S 1 8 D
G
S 2 7 D
S 3 6 D
G 4 5 D
D
Top View P-Channel MOSFET
TA = 25_C - 9.1 -7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C - 7.3 - 5.6
A
Pulsed Drain Current IDM - 50
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA -1 -3 V
VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 55_C - 25
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 40 A
VGS = - 10 V, ID = - 9.1 A 0.015 0.020
Drain-Source On State Resistancea
Drain Source On-State rDS(on)
DS( ) W
VGS = - 4.5 V, ID = - 6.9 A 0.025 0.035
Dynamicb
Total Gate Charge Qg 33 70
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A 5.8 nC
Gate-Drain Charge Qgd 8.6
Turn-On Delay Time td(on) 10 15
Rise Time tr 15 25
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 110 170 ns
Fall Time tf 70 110
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 60 90
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
4V
I D - Drain Current (A)
30 30
125_C
20 20
10 3V 10
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
0.035
r DS(on) - On-Resistance ( W )
VGS = 4.5 V
C - Capacitance (pF)
0.030 1800
Ciss
0.025
0.015
0.010 600
Coss
0.005
Crss
0.000 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID = 9.1 A ID = 9.1 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
0.08
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.06
ID = 9.1 A
TJ = 25_C 0.04
0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
0.4 ID = 250 mA 24
V GS(th) Variance (V)
18
Power (W)
0.2
0.0 12
- 0.2 6
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)
P(t) = 0.0001
10
I D - Drain Current (A)
P(t) = 0.001
P(t) = 1
TA = 25_C P(t) = 10
0.1 Single Pulse
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
1
Normalized Effective Transient
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
1
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
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