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Data Sheet
January 2002
Ordering Information
PART NUMBER
PACKAGE
Features
18A, 200V
rDS(ON) = 0.180
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speed
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
BRAND
IRF640
TO-220AB
IRF640
RF1S640
TO-262AA
RF1S640
RF1S640SM
TO-263AB
RF1S640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN (FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
BVDSS
200
VGS(TH)
25
250
18
100
nA
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = 20V
0.14
0.18
6.7
10
13
21
ns
50
77
ns
46
68
ns
35
54
ns
43
64
nC
nC
22
nC
1275
pF
tf
Qg(TOT)
Qgs
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
400
pF
CRSS
100
pF
3.5
nH
4.5
nH
7.5
nH
oC/W
LD
LS
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
RJC
RJA
62
oC/W
RJA
62
oC/W
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
MIN
TYP
MAX
UNITS
18
72
2.0
120
240
530
ns
1.3
2.8
5.6
VSD
trr
QRR
NOTES:
2. Pulse Test: Pulse width 300s, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25, peak IAS = 18A.
1.0
ID, DRAIN CURRENT (A)
1.2
0.8
0.6
0.4
16
12
0.2
0
0
0
50
100
25
150
50
75
100
150
125
ZJC , TRANSIENT
THERMAL IMPEDANCE (oC/W)
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
PDM
t1
t2
SINGLE PULSE
0.001
10-5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC
10-4
10-3
10-2
10-1
10
30
10s
100s
10
1ms
10ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
24
TC = 25oC
100
7V
18
12
6V
6
DC
5V
4V
0
0
1000
100
10
12
VGS = 7V
18
VGS = 6V
12
VGS = 5V
VGS = 4V
0
0
1.0
2.0
3.0
5.0
4.0
25oC
150oC
1
0.1
0
2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)
0.9
0.6
VGS= 10V
VGS = 20V
0
15
30
45
60
75
3.0
1.2
10
0.3
60
10
1.5
48
VGS = 10V
ID , DRAIN CURRENT (A)
100
24
36
VGS = 8V
24
30
10V
8V
2.4
1.8
1.2
0.6
0
-60 -40
-20
20
40
60
80
1.25
3000
1.15
1.05
0.95
0.85
1800
CISS
1200
COSS
600
CRSS
0.75
-60
-40
-20
20
40
80
60
10
15
1000
ISD , SOURCE TO DRAIN CURRENT (A)
12
25oC
9
150oC
6
0
0
12
18
100
2400
C, CAPACITANCE (pF)
ID = 250A
24
100
25oC
10
30
0.4
0.8
1.2
1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)
2.0
20
ID = 28A
VDS = 40V
16
VDS = 100V
12
VDS = 160V
8
0
0
15
30
45
60
75
tP
VARY tP TO OBTAIN
RG
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01
tAV
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
RG
VDD
10%
10%
DUT
90%
VGS
VGS
50%
50%
PULSE WIDTH
10%
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
VDD
12V
BATTERY
0.2F
Qg(TOT)
SAME TYPE
AS DUT
50k
Qgd
0.3F
VGS
Qgs
D
VDS
DUT
0
IG(REF)
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
IG(REF)
0
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H4