10| mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

gvt kvn& Rvgvj

mnKvix AavcK (c`v_wevb wefvM )

we G Gd kvnxb KjR XvKv

dvb: 016 70856105, 9125630, 9115369

Aacwievnx (Semiconductor)t
h mKj c`v_i cwievnxZv AiK Gi Pq ekx wK cwievnxi Pq Kg Zv`i Aa cwievnx ej| mvavibZ chvq
mviYxi PZz_ kYxi gj hgb wmwjKb, Rvgwbqvg cfwZ c`v_ Aa cwievnxi bvq AvPiY Ki| Gme c`v_ A Zwor
cqvM Ki hvRb ev _K BjKUb cwienb ev cvVvbv hvq Ges ZwWr cevn mw nq| Zvcgvv ewcj
cwienb ev MgbKvix BjKUbi msLv ew cvq, dj cwievnxZv I ew cvq A_vr iva nvm cvq|

Aacwievnxi ewk (Characteristics of semiconductor)t

(i) Aacwievnxi hvRb ev c~b _vK I cwienb ev Lvwj _vK|
(ii) Gi ivaKZ 10-4 m gi|
(iii) hvRb ev I cwienb evi ga kwi eeavb Lze Kg _vK|
(iv) Zvcgvv ewZ cwienb ev BjKUb msLv ew cvq Ges Aacwievnxi Zwor cwievnxZv ew cvq|
(v) Dchy Ac`e wgkb Zwor cwienb agi DjLhvM cwieZb NU|
ev Zi AvjvK AiK, cwievnx I Aacixevnx c`v_i AvPiY evLvt
(K) AiKt KvP, cvwK, KvV BZvw` AiK c`v_| G`i gaw`q w`q we`yr cevwnZ nq
bv| G mgei hvRb ev c~Y _vK Ges cwienb ev m~Y Lvwj _vK| G Qvov
hvRb ev I cwienb evi ga cv_K AbK ekx _vK| mvaviYZ G cv_K
10eV-Gi ekx| h mg c`v_ Dcii ewk we`gvb m jv AiK wnme cwiwPZ|
AiK hvRb ev _K BjKUb cwienb ev wbZ nj h_ cwigvb kw mieivn KiZ
nq mB kw cv nq hvRb ev _K BjKUb cwienb ev hZ cvi| ZvB AiK
c`v_ Zvcgvv AbK evovjI wKQz wKQz BjKUb h_ kw mq Ki hvRb ev _K cwienb ev hZ cvi|
(L) mycwievnxt mycwievnx c`v_ ejZ m mgc`v_K eySvq h mKj c`v_i ga cPzi cwigvb gy BjKUb _vK hv
Zwor cevn Ask Ki| kw evi `wZ Gi A_ nj hmycwievnx c`v_ hvRb
ev I cwienb evi ga AvswkK DcwicvZ (Overlapping) nq| mwZKvi
A_ `yUv evi ga fZ cv_K wbaviY Kiv KwVb| myZivs mycwievnx c`v_
e`ywZK cqvM KijB Zwor cevn NU|
(M) Aacwievnxt Aacwievnx ei we`yr cwievnxZv AiK I mycwievnxi gvSvgvwS| kw evi AvjvK ejv hvq h, G
mg c`v_i hvRb ev I cwienb evi ga kwi cv_K AiKi Pq AbK
Kg _vK| mvaviYZ GB cv_K 1eV gvbi ev Zvi wKQz Kg ev ekx nq| K Zvcgvvq
Aacwievnxi (i) AvswkKc~Y cwienb ev I (ii) AvswkK c~Y hvRb ev _vK| cig
Zvcgvvq Aacwievnxi cwienb ev m~Y Lvwj Ges hvRb ev m~Y c~Y _vK|
myZivs cig Zvcgvvq wmwjKb ev Rvgwbqvg Av`k AiK|
we ev mnRvZ Aacwievnx (Pure or intrinsic semiconductor)t
h me AacwievnxZ Kvb Ac`e _vKbv Zv`i we ev mnRvZ Aacwievnx ej| we AacwievnxZ BjKUb I
nvji msLv mgvb| mnRvZ Aacwievnxi `ycv wefe cqvM Kij GZ BjKUb I nvji Rb Zwor cevn PjZ
_vK| wmwjKb (Si), Rvgwbqvg(Ge), wUb(Sn) cfwZ we ev mnRvZ Aacwievnx|

mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

`ywlZ ev ewnRvZ Aacwievnx (Impure or extrinsic semiconductor)t

mvaviY Zvcgvvq we Aacwievnxi Zwor cwievnxZv LyeB Kg| wK we AacwievnxZ wekl aibi Ac`e AwZ
A cwigvb wgwkq nvj ev gy BjKUbi msLv evovbv hvq| dj Aacwievnxi Zwor cwievnxZv ew cvq| G aibi
Ac`e wgwkZ AacwievnxK `ywlZ ev ewnRvZ Aacwievnx ej| Avi we Aacwievnxi mv_ mywbqwZ I Dchy Dcvq
A cwigvb Ac`e gkvbvi G cwqvK Wvwcs ej| Ac`ei cKwZi Dci wfw Ki ewnRvZ AacwievnxK `y
fvM fvM Kiv hvq| h_v t (i) p-UvBc Aacwievnx (ii) n-UvBc Aacwievnx|
p-UvBc Aacwievnx (p - type semiconductor )t

Kvb we AacwievnxZ mvgvb cwigvY whvRx A_vr chvq mviYxi ZZxq mvwii
gj Ac`e wnme gkvbv nj ZvK p-UvBc Aacwievnx ej| we Aacwievnx
Rvgwbqvg ev wmwjKbi cigvYyZ hw` Dchy gvvq Kvb whvRx gj (Avjywgwbqvg,
Mvwjqvg BZvw`) gkvb nq Zvnj G hvMKZ whvRx Ac`e Rvgwbqvg ev wmwjKbi
Kjvm cPzi nvj mw Ki|
GKwU Avjywgwbqvg cigvYy Zvi wZb w`Ki wZbwU hvRb BjKUb viv
Pvwicvk Rvgwbqvg cigvYyjvi mv_ mghvRx eb MVb KijI GKwU
BjKUbi NvUwZi dj PZz_w`Ki BjKUbi eb AcyY_K hvq| dj Rvgwbqvg cwZwU Avjywgwbqvg cigvYy GKwU
Ki nvj mw Ki| Gfve mvgvbcwigvb Avjywgwbqvg j j nvj mw Ki hv BjKUb Mnb KiZ cZ _vK|
G Rb AvjywgwbqvgK MnxZv (Acceptor) cigvYy ej| K Zvcgvvi Zvcxq DRbvi KviY Gi cwienb
ev wKQy BjKUb mw nq| wK nvji msLv cwienb ev BjKUbi msLvi Pq AbK ekx nq _vK| gy
BjKUbi msLvi Pq nvji AvwaKi KviY GK p-UvBc Aacwievnx ej|
n-UvBc Aacwievnx (n - type semiconductor )t

Kvb we AacwievnxZ mvgvb cwigvY chvRx A_vr chvq mviYxi cg mvwii

gj Ac`e wnme gkvbv nj ZvK n-UvBc Aacwievnx ej| Rvgwbqvgi Kjvm
Dchy gvvq Kvb chvRx gj hgb AvmwbK gkvbv nq Zvnj GKwU AvmwbK
cigvYyi PviwU BjKUb Gi Pvwicvk Rvgwbqvg cigvbyi mv_ mghvRx eb Ave nq|
cg BjKUbwU Kvb mghvRx eb MVb KiZ cvi bv ej Zv D _vK Ges Kjvm
MVbi ga ^vQ` wePiY Ki| Giv BjKUb hvMvb `q ej G`i `vZv cigvYy
(Donor) ej| n-UvBc AacwievnxZ chvRx Ac`e hyKivZ GZ cPyi gy BjKUb Z_v cwienb ev BjKUb
mw nq| ZvQvov K Zvcgvvq Zvcxq DRbvi `ib wKQy BjKUb-nvj hyMj mw nq| wK cwienb ev nvji
Pq BjKUbi msLv AbK ekx _vK ej GK n-UvBc Aacwievnx ej|
myL evqvm (Forword Bias)t
p- AjK GKwU evUvwii abvZK cvimv_ Ges n- AjK GKwU evUvwii FbvZK
cvimv_ hy Kij Zwor cevwnZ ne| Gi KviY njv, evUvwii abvZK cv pAji nvjjvK weKlb Ki Ges FbvZK cv n- Aji BjKUbjvK weKlb
Ki mshvMi w`K cvVve| GZ wefe cvPxii DPZv Kg hvq| dj, n- Aj _K BjKUb p- Aj Ges pAj nvj n- Aj AcvKZ mnR cevwnZ nq| G Lvwj GjvKvi c Kg hvq| hZb ch ZworPvjK ej
_vKe ZZb ch eZbxZ Zwor cevn Pvjy _vKe| ^vfvweKfve evUvwiZ hZekx ZworPvjK ej _vKe cevngvv
ZZ ekx ne| Aacwievnx WvqvWi mv_ evUvixi G iKg mshvMK myL evqvm ev diIqvW evqvm ej|
cvrgyLx evqvm (Reverse Bias)t
p- AjK GKwU evUvwii FbvZK cvimv_ Ges n- AjK GKwU evUvwii abvZK
cvimv_ hy Kij eZbx w`q KvhZ Kvb Zwor Zwor cevwnZ ne bv| Gi KviY njv,

mwgKvKUi I BjKUwbKm&

3
(Semiconductor and Electronics)
evUvwii FbvZK cv p- Aji nvjjvK AvKlb Ges abvZK cv n- Aji BjKUbjvK AvKlb Ki
mshvM nZ `~i mwiq w`e| GZ wefe cvPxii DPZv eo hvq| dj, n- Aji BjKUb Ges p- Aji

nvjjv wefe cvPxi AwZg Ki hZ cvi bv Ges eZbx c~b nIqvZ Kvb cevn _vK bv| G Lvwj GjvKvi
c eo hvq| Aacwievnx WvqvWi mv_ evUvixi G iKg mshvMK cvrgyLx evqvm ev wifvm evqvm ej|
p-n Rvskb ev Aacwievnx WvqvW - Gi ewk jLt
Avgiv Rvwb h, p-n Rvskb myL evqvm cqvM Kij eZbxZ Zwor cevn cvIqv hvq| p-n Rvskb wewfb wefe cv_K
V cqvM Ki cwZ I wbYq Ki X A V Ges Y A I wbq (L) wPi gZ h jL wP cvIqv hvq ZvK
Aacwievnx WvqvW - Gi ewk jL ev p-n Rvskbi I-V jLwP ej|

Rvskb WvqvWi ewk jL AsKb Kivi Rb (K) wPi gZ GKwU

eZbx eenvi Kiv nq| Zwor cevn gvcvi Rb GKwU wgwj AvwgUvi (mA),
wefe gvcvi Rb GKwU fvwgUvi (V) eenvi Kiv nq| cwieZbkxj iva
(Rh) Gi mvnvh eZbxZ chy wefe nvm ew Kiv nq|
D jLwP nZ `Lv hvq h, myL evqvmi mvgvb fvR
ewZ cevngvv `Z ew cvq| wK cvrgyLx evqvmi fvR h_
cwigvb ew KijI cevngvv LyeB mvgvb ew cvq| cixvq `Lv
MQ h, myL evqvm cevngvv KqK wgwjAvwqvi njI cvr evqvmi ejvq Zv nq gv KqK gvBvAvwqvi|
cvrgyLx evqvm gk evovZ _vKj GKwU wekl fvR cevngvv nUvr Lye ewk ew cvq (jLwP fM iLv),
A_vr, gb nq H mgq Rvskbi iva m~Yi~c k~b nq| G NUbvK Rbvi wqv (Zener effect) ej Ges H fvRK
Rbvi fvR (Zener Voltage) ej|
p-n Rvskvb ev Aacwievnx WvqvW viv GKgyLxKiYt
cwieZx cevnK (AC) GKgyLx cevn (DC) icvwiZ KiZ cvi ej p-n RvskbK

iwdvqvi ev GKgywLKviK wnme eenvi Kiv nq| GKgyLxKiY `ycKvii nZ cvi|

h_vt (K) AaZi GKgyLxKiY (Half-wave rectification)
(L) c~YZi GKgyLx KiY (Full-wave rectification)
(K) AaZi GKgyLxKiY (Half-wave rectification)t
(M) wP GKwU p-n RvskbK iwdvqvi wnme `Lvb nqQ| eZbxwU GKwU cwieZx cevn Drmi mv_ mshy| dj
Drmi cwZPi GK AaP RvskbwU myL evqvm Ges Aci AaP RvskbwU cvrgyLx evqvm _vKe| hLb p Aj
abvZK, ZLb p-n RvskbwU myL evqvm cv nq| dj eZbxZ mshy jvW iwRv RL Gi ga w`q we`yr cevn
Pj| Avevi p Aj hLb FbvZK nq ZLb p-n RvskbwU cvrgyLx evqvm cv nq| dj jvW iwRv RL Gi ga
w`q Kvb we`yr cevn Pj bv| Ges jvW RL Gi `yB cvKvb wefe cv_K cvIqv hvq bv| myZivs `Lv hvQ h, jvW
RL ivai wfZi w`q GKwU weiwZhy wK me`v GKgyLx cevn hvQ| jLwP nZ mnR eySv hvq h, AC mieivni
GKwU c~Y Pi DcwiAai `ib jvW RL ivai ga w`q cevn cvIqv MjI wbvai `ib Kvb cevn hve bv| c~Y
Pi GK AaKi cevn cvIqv hvq ej GK AaZi GKgyLxKiY (Half-wave rectification) ejv nq|
(L) c~YZi GKgyLx KiY (Full-wave rectification)t
c~YZi GKgyLxKiYi Rb `ywU p-n Rvskb WvqvW (N) wPi gZ mgvivj
eenvi KiZ nq| awi, GKwU c~YPi Dcwi AaKi Rb A cv abvZK|
GgZvevq , WvqvW D1 Gi ga w`q Zwos cevwnZ ne| wK B cv FYvZK
_vKvi Kvib WvqvW D2 Gi ga w`q Kvb cevn _vKe bv| Avevi, c~YPi
wbvai Rb A cv FbvZK Ges B cv abvZK ej WvqvW D2 Gi gaw`q
Zwor cevwnZ ne Ges WvqvW D1 Gi gaw`q Kvb we`yr cevwnZ ne bv|
Dfq jvW RL ivai gaw`q Zwor GKB w`K cevwnZ ne| GKB c~b Zi GKgyLx KiY ej|

mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

UvbwRi I Gi cKvi f`t

wZb cv wewk h z` Aa-cwieevnK h` ewngyLx cevn, fvR Ges gZv AgyLx cevn viv wbqwZ nq Ges
ewngyLx cevn msKZ eb weewaZ nq ZvK UvbwRvi ej| Dnv `yB cKvi h_vt PNP I NPN

Avwjdvqvi wnme n-p-n UvbwRvii KvhcYvjx evLvt

wP GKwU Kgb GwgUvi n-p-n UvbwRvii MVb `Lvb nqQ| BbcyU mvwKU
em I GwgUvii ga Ggb gvbi GKwU wWwm fvR VBB cqvM Kiv nq hvZ
G Rvskb me mgq myL evqvm _vK A_vr G wm wmMbvji FbvZK AaPi
mgqI G evqvm myL evqvm _vK| myL evqvm _vKvi KviY BbcyU mvwKU
iva Lye Kg _vK| AvDUcyU mvwKU KvjKUi I GwgUvii ga wWwm fvR
VCC cqvM Ki cvrgyLx evqvm Kiv nq| G KviY AvDUcyU mvwKU iva Lye
ekx _vK| AvDUcyU mvwKU GKwU DP gvbi fvi iva RLmshy _vK|
BbcyU I AvDUcyU AbyKzj wWwm evqvm _vKvi KviY GwgUvi, em I KvjKUvi cevn i nq| awi wWwm cevn jv
h_vg IE, IB I IC | Kgb GwgUvi eZbxZ em cevn nj BbcyU I KvjKUi cevn nj AvDUcyU|
awi, BbcyU mvwKU GKwU `~ej AC wmMbvj fvR Es cqvM Kiv njv| Es Gi abvZK AaPi mgq em-GwgUvi
Rvskbi myL evqvm ew cvq, dj AwaK msLK BjKUb GwgUvi _K em Z_v KvjKUii w`K avweZ nq Ges
mejv cevn h_vt IB, IC I IE ew cvq| KvjKUi cevni ew IC, em cevni ew IB Gi Zzjbvq AbK ekx| IC
I IB Gi AbycvZK KviU MBb dvi ej| GK viv cKvk Kiv nq| I C IC >> IB ej cevn ewaZ nq|
I B

Avevi eo hvIqv KvjKUi cevn fvi iva RL G AwaK wefe cZb NUvq A_vr AvDU cyU fvR
Vo= IC RL hv ES Zzjbvq AbK b eo| G fve AvDU cyU fvR I KviU AbK b ewaZ nq| G fve GKwU
n-p-n UvbwRi Avwjdvqvi wnme KvR Ki|
Avwjdvqvi wnme p-n-p UvbwRvii KvhcYvjx evLvt
wP GKwU Kgb GwgUvi p-n-p UvbwRvii MVb `Lvb nqQ| BbcyU mvwKU
em I GwgUvii ga Ggb gvbi GKwU wWwm fvR VBB cqvM Kiv nq hvZ
G Rvskb me mgq myL evqvm _vK A_vr AC wmMbvji abvZK AaPi
mgqI G evqvm myL evqvm _vK| myL evqvm _vKvi KviY BbcyU mvwKU
iva Lye Kg _vK| AvDUcyU mvwKU KvjKUi I GwgUvii ga wWwm fvR
VCC cqvM Ki cvrgyLx evqvm Kiv nq| G KviY AvDUcyU mvwKU iva Lye
ekx _vK| AvDUcyU mvwKU GKwU DP gvbi fvi iva RLmshy _vK|
BbcyU I AvDUcyU AbyKzj wWwm evqvm _vKvi KviY GwgUvi, em I KvjKUvi cevn i nq| awi wWwm cevn jv
h_vg IE, IB I IC | Kgb GwgUvi eZbxZ em cevn nj BbcyU I KvjKUi cevn nj AvDUcyU|
awi, BbcyU mvwKU GKwU `~ej AC wmMbvj fvR Es cqvM Kiv njv| Es Gi FbvZK AaPi mgq em-GwgUvi
Rvskbi myL evqvm ew cvq, dj AwaK msLK nvj GwgUvi _K em Z_v KvjKUii w`K avweZ nq Ges
mejv cevn h_vt IB, IC I IE ew cvq| KvjKUi cevni ew IC, em cevni ew IB Gi Zzjbvq AbK ekx| IC

mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

I IB Gi AbycvZK KviU MBb dvi ej| GK viv cKvk Kiv nq|

I C
I B

IC >> IB ej cevn ewaZ nq|

Avevi eo hvIqv KvjKUi cevn fvi iva RL G AwaK wefe cZb NUvq A_vr AvDU cyU fvR
Vo= IC RL hv ES Zzjbvq AbK b eo| G fve AvDU cyU fvR I KviU AbK b ewaZ nq| G fve GKwU
p-n-p UvbwRi Avwjdvqvi wnme KvR Ki|
Field Effect Transister (FET) t FET GKwU wZb cvi GKK evnK Avavb wewk eev ev Kkj Device| GLvb

Zwor cevn chy Zwor viv wbqwZ nq| GwUi Kvh mv`b Kej gv GKaibi Avavbi Dci wbfikxj ej
GK Unipolar Transistor ejv nq| dU (FET) g~jZ `y aibi| h_v- Rvskb dU (JFET) Ges avZeAvBW dU
(MOSFET) |
Wvwcs (Dopping)t
mvaviY Zvcgvvq we Aacwievnxi Zwor cwievnxZv LyeB Kg| wK we AacwievnxZ wekl aibi Ac`e AwZ
A cwigvb wgwkq nvj ev gy BjKUbi msLv evovbv hvq| dj Aacwievnxi Zwor cwievnxZv ew cvq| G aibi
Ac`e wgwkZ AacwievnxK ewnRvZ Aacwievnx ej| Avi we Aacwievnxi mv_ mywbqwZ I Dchy Dcvq A
cwigvb Ac`e gkvbvi G cwqvK ejv nq Wvwcs|
BbwUMUW mvwKU (IC)t BbwUMUW mvwKU nj m eZbx hvZ eZbxi Dcvsk ev hvskjv GKwU z` AacwievnK wPc
wekl cwqvq MVb Kiv nq hviv mqswqfve H wPci Ask| BbwUMUW mvwKU AbKjv hvsk hgb ivaK,
aviK, WvqvW, UvbwRi BZvw` Ges G`i AmshvM GKwU z` cvKR wnme _vK| Giv GKwU c~b BjKUwbKm&
Kvhvejx mb Ki|
BbwUMUW mvwKU (IC) Gi ewkt
(1) GB mvwKUi wewfb hvsk ^qswqfveB z` AacwievnK wPci Ask Ges K_bB ^Z hvskK Avjv`v Kiv hvq
bv ev cybvcb Kiv hvq bv|
(2) GB mvwKUi AvKvi _vK LyeB z`| wewfb hvski mshvM `LZ nj gvBvmKvc evenvi KiZ nq|
BbwUMUW mvwKUi myweavt
(1) mshvM msLv Kg nIqvq wbfihvMZv ekx|
(2) AZ z`vKwZ|
(3) IRb GKeviB Kg|
(4) cwiPvjbvi Rb Kg we`yZi cqvRb nq|
(5) AwZ DP Zvcgvvq I AwaK hvMZvq KvR KiZ cvi|
(6) ^ `vg
BbwUMUW mvwKUi Amyweavt
Kvb hvsk b nj mgwPcwU cwieZb KiZ nq, Ask wekl givgZ Kiv hvq bv|
AvjvK wbtmiK WvqvW (LED)t
h AacwievnxRvZ Kkj hv eenvi Ki Zwor kwK Zvc AvjvK kwZ icvwiZ Ki mB Kkj K AvjvK
wbtmiK WvqvW (LED) ej| AvjvK wbtmiK WvqvW `LZ AbKUv Qv
evji gZ| [wP t (P)]

mwgKvKUi I BjKUwbKm&

(Semiconductor and Electronics)

KvhcYvjxt
(LED) gyjZ GKwU myL SvK wewk p-n Rvskb|

myL SuvK chy nj GwU Avjv wbtmiY Ki| (Q I R) wP

GKwU GKwU (LED) Gi eZbx I KvhbxwZ `Lvb nqQ|
Avgiv Rvwb h, p-n Rvskbi n Aj nZ BjKUb cevwnZ
nq p Ask hvq Ges p Aji nvji mv_ mshvRb I
cybwgjb NU| Abyicfve p Aj nZ nvj n Aj hvq Ges BjKUbi mv_ mshvRb NU| cybwgjb wewqv njt
A+ + e A GLvb A+ nQ abvZK Avqb (nvj), enQ BjKUb A nQ Drcb wbic Aby ev cigvYy| wbic
AYy ev cigvYy Drcb nevi ci wKQyUv DwRZ (Excited State) Aevq _vK| cieZxZ Avjv ev Zvc kw wbtmiY Ki
wbic AYy ev cigvYy Aevq (Ground State) wdi Avm|
LED Gi eenvit

AcwUKvj hvMvhvM, BwKUi evwZ Ges wWwRUvj BjKUwbKm& BZvw`Z LED eenvi Kiv nq| wWwRUvj hmg~n
iwb eY ev msLv mw I c`kbi Rb LED eenvi Kiv nq|
mi Kvlt
h p-n hvwK eev viv m~h wKiYi AvjvK iwk kwK Zwor kwZ icvwiZ Ki ZvK ZvK mi Kvl ej|
(S) wP GKwU mi Kvli MVb `Lvb njv|G Kvl wmwjKbi Zix p-n Rvskb WvqvWi Dci Mvmi GKwU Rvbvjv
_vK| p Aj LyeB cvZjv Kiv nq hvZ m~hiwk Lye mnRB p-n Rvskb cuQZ cvi| AvcwZZ mi iwki dvUb
KwYKv hLb p ev n ei hvRb BjKUbi mv_ avv Lvq ZLb BjKUb h_ kw cv nq Ges g~j
cigvYy _K wewQb nq hvq| G fve Rvskbi `y cvk h_ msLK BjKUb I nvji mw nq| Rvskb weivRgvb
Zwori cfve Gme BjKUb I nvj cybwgjbi myhvM cvq bv|
eis, cii nZ wewQb nq Rvskb cvi nq cii wecixZ w`K
Mgb Ki| nvj jv p Aji w`K Ges BjKUb jv n Aji
w`K avweZ nq| p Aj m BjKUb nQ msLv jNy BjKUb evnK|
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