Professional Documents
Culture Documents
Song et a].
(54)
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mg'wo"
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eou (
7,142,682 B2 *
B2
4/2008
Boor et a1.
0011's
2008/0137892 A1
2009/0074220 A1
3/2009 Shennib
7,292,700 B1
7,352,876
(*)
US 8,428,281 B2
100736894 B1
_
7/2007
cued by examlner
(22) Filed:
Jan. 6, 2011
(65)
Aug. 4, 2011
(57)
ABSTRACT
(30)
Feb. 1,
...................... ..
(2006-01)
References Cited
body.
U.S. PATENT DOCUMENTS
6,664,713 B2*
6,879,695 B2
12/2003
100
20
300
US. Patent
Sheet 1 on
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FIG. 1
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300
FIG. 2
20
US. Patent
Sheet 2 on
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FIG. 3
(100
141111114
260
US. Patent
Sheet 3 of7
US 8,428,281 B2
FIG. 4
180(380)
100w
200*
300-
IVIEIVIS MICROPHONE
PREAIVIPLIFIER
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A/D cONvERTER
~~220
SIGNAL RROOEssOR
~~230
D/A OONvERTER
~~240
AMPLIFIER
~~250
MEIVIS REOE|vER
US. Patent
Sheet 4 on
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Sheet 5 of7
FIG. 6B
400
200
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US. Patent
Sheet 6 of7
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Sheet 7 of7
FIG. "7B
400
200
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1
CROSS-REFERENCE TO RELATED
APPLICATIONS
the DAC.
In one exemplary embodiment, each of the MEMS micro
phone and the MEMS receiver may include a plurality of
transducer cells, each of Which may include a substrate; a ?rst
BACKGROUND
1) Field
The following disclosure generally relates to small hearing
aids.
20
25
30
40
single PCB.
ments.
SUMMARY
phone chip and the MEMS receiver chip may include a plu
rality of transducer cells, each of Which includes a substrate;
a ?rst electrode disposed on the substrate; a plurality of sup
porting units disposed on the ?rst electrode; a thin ?lm sup
60
US 8,428,281 B2
3
the ?gures.
It Will be understood that, although the terms ?rst, second,
20
25
items.
It Will be understood that When an element or layer is
referred to as being formed on, another element or layer, it
can be directly or indirectly formed on the other element or
30
cent, etc.).
35
hearing aid;
FIG. 2 is a top plan vieW of an embodiment of a hearing aid
FIG. 3 is a cross sectional vieW of an embodiment of the 40 erWise. It Will be further understood that the terms com
45
or groups thereof.
disclosure;
50
panying draWings.
disclosure; and
55
DETAILED DESCRIPTION
60
and the hearing aid processor chip 200, and betWeen the
hearing aid processor chip 200 and the MEMS receiver 300,
65
US 8,428,281 B2
5
insulating the substrates 110 and 310 and the ?rst electrodes
130 and 330 from each other, respectively, and may include
silicon layers, oxide layers, or nitride layers or layers With
other materials With similar characteristics. The ?rst elec
trodes 130 and 330 and the second electrodes 160 and 360 are
20
25
30
35
rial layers 120 and 320, ?rst electrodes 130 and 330, support
ing units 140 and 340, thin ?lms 150 and 350, and second
electrodes 160 and 360, respectively. In the transducer cells
180 and 380, the dielectric material layers 120 and 320 are
disposed on the substrates 110 and 310, respectively and the
?rst electrodes 130 and 330 are disposed on the dielectric
50
improved.
When the ?rst electrodes 130 and 330 are disposed on a part of
units 140 and 340 are disposed on the ?rst electrodes 130 and
330, respectively, and the supporting units 140 and 340 sup
port the thin ?lms 150 and 350, respectively, that are disposed
65
US 8,428,281 B2
7
posed to a ?rst surface of the PCB 260 via the ball bumps 170,
for example, but is not limited thereto. In one exemplary
embodiment, the MEMS receiver 300 may be disposed to a
second surface of the PCB 260 via the ball bumps 170, for
example, but is not limited thereto. The ?rst electrodes 130
and 330 and the second electrodes 160 and 360 of the MEMS
of FIG. 6A.
20
25
30
chip 200.
Although not shoWn, an exemplary embodiment of the
small hearing aid according to the present disclosure may
45
microphone 100, the hearing aid processor chip 200, and the
MEMS receiver 300. In one exemplary embodiment, the bat
tery may be located outside of ears and connected to the
hearing aid processor chip 200 With Wires or Wireless, or may
50
55
65
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10
a signal processor Which performs gain correction and
01
verter.
of arrays.
prises:
a substrate;
a ?rst electrode disposed on the substrate;
a plurality of supporting units disposed on the ?rst elec
20
trode;
200, and the MEMS receiver 300 are disposed on both sur
and
FIG. 6A, the MEMS microphone chip 400, the hearing aid
processor chip 200, and the MEMS receiver chip 600 are
separately fabricated and disposed on the PCB 500. HoWever,
in the exemplary embodiment of the small hearing aid shoWn
30
processor chip 200, and the MEMS receiver 300 are disposed
in a semiconductor process.
signals;
a hearing aid processor chip Which converts the analog
40
log signals;
a hearing aid processor chip Which converts the analog
housing.
50
55
chip, and
the microelectromechanical system receiver is disposed to
60
trode;
65
US 8,428,281 B2
11
12
housing.
17. A hearing aid comprising:
a substrate;
signals;
20
18. The hearing aid of claim 17, Wherein the hearing aid
12. The hearing aid of claim 11, Wherein the hearing aid
40
13. The hearing aid of claim 11, Wherein each of the micro
45
and
a second electrode disposed on the thin ?lm.
trode;
50
and
a second electrode disposed on the thin ?lm.
comprising:
a substrate;
a ?rst electrode disposed on the substrate;
a plurality of supporting units disposed on the ?rst elec
19. The hearing aid of claim 17, Wherein each of the micro
electromechanical system microphone and the microelectro
mechanical system receiver comprises a plurality of trans
ducer cells, each of Which comprises:
trode;
a substrate;
a ?rst electrode disposed on the substrate;
nals; and
an ampli?er Which ampli?es the analog signals converted
from the digital signals by the digital-to-analog con
verter.
verter.
55
housing.