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TM1241S-L, TM1261S-L
Features
External Dimensions
4.20.2
C 0.5
2.8
0.2
10.00.2
4.0
3.90.2 0.80.2
16.90.3
8.40.2
3.30.2
(Unit: mm)
a
b
1.35
0.15
1.350.15
+0.2
0.85 0.1
2.54
2.54
0.2
2.2
2.4
+0.2
0.45 0.1
0.2
a. Part Number
b. Lot Number
Symbol
Ratings
TM1241S-L
TM1261S-L
400
600
Unit
Conditions
VDRM
IT(RMS)
12.0
ITSM
120
VGM
10
IGM
PGM
PG(AV)
0.5
Junction temperature
Tj
40 to +125
Storage temperature
Tstg
40 to +125
Isolation voltage
VISO
1500
Vrms
Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
Ratings
min
typ
max
0.3
2.0
0.1
1.6
0.8
Gate trigger voltage
VGT
Unit
Conditions
mA
0.7
2.0
0.8
2.0
16
IGT
25
Holding current
Thermal resistance
42
VGD
IH
Rth
T2 , G
T2 , G
T2 , G
30
30
30
mA
T2 , G
T2 , G
T2 , G
70
Gate non-trigger voltage
T2 , G
1.0
12
T2 , G
2.0
0.2
mA
20
3.0
C/W
VD=1/2VDRM, Tj=125C
VD=6V
Junction to case
TM1241S-L, TM1261S-L
Tj=25C
1.5
1.0
2.5
2.0
On-state voltage
3.0
100
80
IT(RMS) Tc Ratings
10
50
100
6
4
Tj= 40C
Tj=25C
0
20 40 60 80
100
75
50
25
(Typical)
(VD=30V, RGK=)
100
Full-cycle sinewave
Conduction angle : 360
Self-supporting
Natural cooling
No wind
125
iGF (A)
IH temperature Characteristics
150
Full-cycle sinewave
Conduction angle :360
125
10
Gate current
IT(RMS) Ta Ratings
150
12
0
5
Number of cycle
14
Full-cycle sinewave
Conduction angle :360
40
3.5
18
50
100
75
50
(T2 T1 )
( T2 T1 )
10
25
2
8
10
12
14
0
0
10
12
14
103
1.0
0.5
0.5 1
103
1.5
0.2
0.5 1
10 2
10
Pulse width
0.5
0.5 1
103
Tj= 40C
20C
tw
0C
25C
50C
75C
100C
125C
10
5
1
0.5
0.2
0.5 1
10 2
10
Pulse width
103
0.8
0.6
0.4
0.2
25
50
75
100
125
1
0.5
0.2
0.5 1
10
40
25
50
75
10 2
10
100
125
103
t w (s)
rth (C/W)
(T2, G )
(T2+, G )
(T2+, G+ )
1
0
1.0
(VD=6V, RL=10)
MODE
MODE
MODE
10
Pulse width
(Typical)
50
igt
Tj= 40C
20C
tw
0C
25C
50C
75C
100C
125C
t w (s)
(T2,G )
(T2+,G+ )
(T2+,G )
103
(MODE )
(Typical)
MODE
MODE
MODE
10 2
10
30
125
igt
t w (s)
(VD=6V, RL=10)
100
1.0
trigger current
igt (Gate
)
at Tj and tw
(
i
10 2
10
)
(
trigger current
igt (Gate
)
at Tj and tw
1
0.5
75
Tj= 40C
vgt
20C
0C
tw
25C
50C
75C
100C
125C
(MODE )
gate trigger
IGT DC
current at 25C
)
5
10
50
1.5
30
Tj= 40C
tw
20C
0C
25C
50C
75C
100C
125C
25
igt (Typical)
30
igt
(MODE )
vgt
Tj= 40C
20C
0C
tw
25C
50C
75C
100C
125C
(MODE )
gate trigger
IGT DC
current at 25C
2
40
3.0
2.5
2.0
2.0
0
40
2.0
trigger voltage
vgt ( Gate
)
at Tj and tw
)
(
gate trigger
VGT DC
voltage at 25C
trigger voltage
vgt ( Gate
)
at Tj and tw
)
)
gate trigger
VGT DC
voltage at 25C
gt Gate trigger voltage
at Tj and tw
10 2
10
1.5
(MODE )
1.0
0.5
0.5 1
1.0
vgt (Typical)
Tj= 40C
vgt
20C
0C
tw
25C
50C
75C
100C
125C
1.5
0.5
(MODE )
2.0
gate trigger
VGT DC
voltage at 25C
gate trigger
IGT DC
current at 25C
60
vT ( V )
vGF (V)
120
0.5
0.5
10
10 ms
1cycle
Gate voltage
iT (A)
On-state current
10
140
W
=5
P GM
Tj=125C
12
Tj= 20C
160
50
Gate Characteristics
ITSM Ratings
100
vT iT Characteristics (max)
Junction to
operating
environment
10
Junction to
case
1
0.1
0.1
10
10 2
10 3
10 4
10 5
t, Time (ms)
43