MITSUBISHI SEMICONDUCTOR GaAs FET

MGF491xG Series
SUPER LOW NOISE InGaAs HEMT

DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron

OUTLINE DRAWING

Unit:millimeters

Mobility Transistor) is designed for use in L to Ku band amplifiers.

The

hermetically

sealed

metal-ceramic

package

4.00.2

assures

minimumu parasitic losses, and has a configuration suitable for

1.850.2

microstrip circuits.

The MGF491*G series is mounted in the super 12 tape.

0.50.15

FEATURES

Low noise figure

@f=12GHz

MGF4916G:NFmin.=0.80dB(MAX.)
0.50.15

MGF4919G:NFmin.=0.50dB(MAX.)
High associated gain

@f=12GHz

Gs=12.0dB(MIN.)
1.80.2

APPLICATION
L to Ku band low noise amplifiers.

QUALITY GRADE
GG
1 GATE
2 SOURCE

RECOMMENDED BIAS CONDITIONS

3 DRAIN

VDS=2V,ID=10mA

GD-16

Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS (Ta=25C)

Symbol
VGDO
VGSO
ID
PT
Tch
Tstg

Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature

Ratings
-4
-4
60
50
125
-65 to +125

Unit
V
V
mA
mW
C
C

ELECTRICAL CHARACTERISTICS (Ta=25C)

Symbol

Parameter

V(BR)GDO
IGSS
IDSS
VGs(off)
gm
GS

Gate to drain breakdown voltage

Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage

NFmin.

Transconductance
Associated gain
Minimum noise figure

Test conditions
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz

MGF4916G
MGF4919G

Min
-3

15
-0.1

12.0

Limits
Typ

75
13.5

Max

50
60
-1.5

0.80
0.50

Unit
V
A
mA
V
mS
dB
dB
dB

Nov. 97

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF491xG Series
SUPER LOW NOISE InGaAs HEMT

TYPICAL CHARACTERISTICS (Ta=25C)

ID vs. VGS

ID vs. VDS

50

60

Ta=25C
VDS=2V

Ta=25C
VGS=-0.1V/STEP

50

40

VGS=0V

40
30
30
20
20
10

10

0
-1.0

0
-0.5

GATE TO SOURCE VOLTAGE VGS(V)

DRAIN TO SOURCE VOLTAGE VDS(V)

NF & Gs vs. ID
(MGF4919G)
16

Ta=25C
VDS=2V
f=12GHz

14
GS
12
10

0.9
0.8

0.7
0.6
NF

0.5
0.4
0.3

10

15

20

25

DRAIN CURRENT ID (mA)

Nov. 97

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF491xG Series
SUPER LOW NOISE InGaAs HEMT

S PARAMETERS
Freq.
(GHz)

(Ta=25C,VDS=2V,ID=10mA)
S11

S21

S12

S22

Angle
-22.3
-40.6
-53.2
-70.9
-88.8
-105.7
-120.6
-132.1

Mag.
5.775
5.585
5.401
5.161
4.899
4.626
4.316
4.100

Angle
158.1
140.6
128.9
111.8
96.8
80.8
67.9
56.4

Mag.
0.020
0.035
0.051
0.064
0.075
0.083
0.087
0.090

Angle
71.9
61.8
53.3
42.4
29.3
19.0
9.1
4.1

Mag.
0.533
0.514
0.489
0.457
0.424
0.391
0.369
0.357

Angle
-19.2
-33.4
-42.9
-58.2
-71.6
-87.5
-100.6
-110.8

MSG/MAG
(dB)

1
2
3
4
5
6
7
8

Mag.
0.990
0.967
0.925
0.874
0.831
0.783
0.743
0.706

0.10
0.19
0.27
0.35
0.43
0.50
0.57
0.64

28.8
26.5
24.3
21.6
19.8
18.1
16.8
15.9

9
10
11

0.682
0.670
0.639

-144.7
-159.1
-171.8

3.887
3.765
3.617

43.2
30.1
17.5

0.093
0.094
0.095

-6.4
-14.3
-24.4

0.357
0.351
0.339

-122.3
-133.0
-143.5

0.69
0.72
0.80

15.1
14.7
14.0

12
13

0.617
0.591

175.3
163.1

3.526
3.421

4.5
-8.1

0.096
0.094

-33.5
-42.5

0.329
0.328

-154.0
-163.9

0.86
0.91

13.5
13.0

14
15
16
17
18

0.571
0.565
0.560
0.533
0.484

152.9
140.1
125.8
109.8
91.2

3.349
3.333
3.349
3.356
3.337

-17.4
-29.6
-44.4
-59.9
-77.0

0.094
0.096
0.098
0.101
0.104

-50.9
-61.1
-74.1
-88.8
-105.1

0.328
0.343
0.351
0.337
0.310

-171.3
179.5
170.5
161.8
151.6

0.95
0.96
0.98
1.01
1.11

12.7
12.7
12.7
12.5
12.1

NOISE PARAMETERS
Freq.
(GHz)
4
8
12
14
18

(Ta=25C,VDS=2V,ID=10mA)
opt

Magn.
0.76
0.59
0.48
0.41
0.34

Angle(deg.)
49
95
139
166
-142

Rn
()
12.5
4.7
2.3
1.8
1.5

NFmin.(dB)
MGF4916G
MGF4919G
0.31
0.24
0.47
0.35
0.60
0.45
069
0.50
0.88
0.61

Gs
(dB)
18.3
15.9
13.5
12.3
9.9

Nov. 97