Chng 3.

B BIN I XUNG P XUNG P MT CHIU

B bin i xung p (BBXA) l b bin i m in p ngun c ng, ct vo ph ti mt
cch c chu k. Do in p trn ti l nhng xung p mt chiu (BBXA mt chiu) hoc xoay chiu
(BBXA xoay chiu) tu thuc vo in p ngun l in p mt chiu hoc in p xoay chiu.
3.1. CU TRC V PHN LOI CC B BIN I XUNG P MT CHIU
3.1.1. Khi qut

Trong khong thi gian 0 t1, kho K ng li, in p trn ti UR s c gi tr bng in p ngun
UR = E; cn trong khong t1 T kho K m ra v UR = 0.
Nh vy gi tr trung bnh ca in p trn ti s l:

UR
Trong :

Edt

E
E
T 0
T

(3.1)

- Thi gian kho K ng

- H s iu chnh
T Chu k ng ct ca kho K.

Nh vy, thay i in p trn ti c hai cch:

1-

Thay i thi gian ng kho K ( = var), khi gi chu k ng ct khng i ( T = const).

Gi l phng php iu ch rng xung.

2-

Thay i tn s ng ct ( f

1
= var) v gi thi gian ng kho K khng i (=const).
T

Nh vy b bin i xung p c kh nng iu chnh v n nh in p ra trn ph ti.

u im :

Hiu sut cao v tn hao cng sut trong b bin i khng ng k so vi cc b bin i lin
tc.

chnh xc cao cng nh t chu nh hng ca nhit mi trng, v yu t iu chnh l

thi gian ng kho K m khng phi gi tr in tr ca cc phn t iu chnh thng gp
trong cc b iu chnh lin tc.

Cht lng in p tt hn so vi cc b bin i lin tc

Kch thc gn nh.

Nhc im :

Cn c b lc u ra, do lm tng qun tnh ca b bin i khi lm vic trong h thng

kn.

Tn s ng ct ln s to ra nhiu cho ngun cng nh cc thit b iu khin.

3.1.2. B bin i xung p mt chiu dng tiristo

Trn s hnh 3.2b, tiristo TC l tiristo chnh (kho in t),tiristo ph (Tf) cng vi cc phn
t C, R, D, L lm thnh mch chuyn mch kho tiristo chnh.
i vi s hnh 3.2a, khi khaTC ngi ta m Tf. Nh vy trn TC s c in p ngc bng
gi tr in p trn t v n lm cho dng qua TC gim v khng v kho li.
i vi s hnh 3.2b, khi m T f, t C c np in vi du dng pha trn v m pha
di. Khi cho tiristo chnh (TC) lm vic, t C s phng in qua mch Tc, D, L v do hin tng cng
hng n s c np in theo chiu ngc li (du in p trong ngoc hnh 3.2b). Du in p ny
ph hp to in p ngc cho TC. Mun kho TC ta li m Tf v in p ngc ca t C lc ny c tc
dng kho TC li.
3.1.3. Phn loi
Da vo cch mc van: c xung p song song hoc ni tip
Da vo ngun in ra: xung p gim p v xung p tng p
Tu thuc vo du in p m ngi ta chia ra: b bin i xung p khng o chiu, hoc b bin
i xung p c o chiu

3.1.4. S cu trc (Hnh 3.5)

Ngun mt chiu c th l c quy hoc b chnh lu. B lc u vo thng dng mch LC hoc
ch dng in cm. T C c th c thay th bng cc phn t tch tr nng lng nh c quy.
Kho in t (KT) ngy nay c dng ch yu l cc van bn dn iu khin hon ton BJT,
GTO, MOSFET, IGBT.

B lc u ra (L0) c tc dng san phng dng in u ra ca b bin i.

3.2. B BIN I XUNG P MT CHIU KHNG O CHIU C IN P RA THP HN

IN P VO (B bin i xung p ni tip)
Khi ti R + L:
Kho in t dng GTO s c ng ct vi chu k T theo lut iu khin nh th hnh 3.6b,
c.Van T s dn in khi UG > 0 v van s b kho li khi UG < 0.Trong khong t 0 t t1, khi T dn in,
nng lng ca ngun s c cp cho ph ti, UAB = E. Trong khong (t1 T), van kho, do nng lng
tch tr trong in cm, dng in vn theo chiu c v khp mch qua van m D, lc ny UAB = UD 0.
Gi tr trung bnh ca in p ti hai im A, B s l:
t

U AB

1 1
t
Edt E 1 E.

T 0
T

(3.2)

t1
T

l h s iu chnh in p.
Ta c h phng trnh m t hot ng ca s :
Khi GTO ng mch: iR L
Khi GTO h mch : iR L

di
E
dt

di
0
dt

tm dng ti ta dng phng php ton t Laplace: Nu hm s lin tc th nh Laplace ca n l:

F P h t e pt dt

(3.3)

v ngc li nu hm h(t) c biu din di dng :

h(t )
Th:

f ( P)
PF ( P)
h t

f 0

F 0

f an

n 1 an F an

.e ant

an l nghim ca phng trnh c tnh.

p dng cng thc (3.3) ta tm c nh ca UAB:
E 1 e pt1
U AB P .
P 1 e PT
nh ca dng ti l:

(3.4)

I P

U AB P
Z P

E
1 e pt1
.
P 1 e PT R PL

(3.5)

p dng cng thc (3.4) ta tm c dng in trong khong t t1 l:

i1

E
1 a1b1 t
1

R
1 a1

(3.6)

trong khong t1 T l:
i2

E
1 b11 t
1

.e

R
1 a1

(3.7)

L / R l hng s thi gian ca mch ti.

a1 e

RT
L

; b1 e

RT
L

Hnh 3.6. B bin i xung p

( d,e,f trng hp dng ti lin tc. g,h,i trng hp dng ti gin on )

Cho cc gi tr t = t1 v t = T t1 ta tm c:
I max

E 1 b 1
R 1 a1

(3.8)

I min

E b1 1 a1
R 1 a1

(3.9)

Dng trung bnh qua van T s l:

1
E
1 b1 1 a1b1

IT
R
T
1 a1

(3.10)

Dng trung bnh qua diode:

1
E 1 b1 1 a1b1

ID .
R T
1 a1

(3.11)

Dng trung bnh qua ti:

I t IT I D

E
U
AB
R
R

(3.12)

Dng ti khng ph thuc vo tn s ng ct ca van v hng s thi gian ca mch ti.

Bin p mch ca dng ti:
I max I max I min

1
E 1 b1 1 a1b1

R
1 a1

Khi 0,5 th I max t gi tr cc i.

n gin php tnh ngi ta thng chn:
i1

E
t ;0 t t1 vi max
R

(3.13)

v dng biu thc (3.13) thay cho (3.6) tnh dng trung bnh qua cc van.
Vic tnh ny cho kt qu sai s khng qu 10% v c th chp nhn c khi chn van vi mt h
s d tr no .
T cc gi tr ca it ngi ta dng c th ca dng ti it, dng qua GTO v qua diode
H s p mch ca in p ra:
km

1 b11 1 a1b1
U AB

E
1 a1

Khi nng lng tch tr trong in cm L l hu hn, s xy ra ch dng in gin on (hnh

3.6g,h,i). Dng qua diode m s gim v khng trc khi kho in t T c ng li. Ch dng
in gin on s lm tng h s p mch trn ti v lm gim cht lng c tnh ngoi ca b bin i.

3.3. PHNG PHP TNH TON B BIN I XUNG P

Hnh 3.7. Dng v p trn cun cm

Xt phn t in cm L trong s hnh 3.6a
ch gn xc lp, gi tr in p trung bnh trn in cm phi bng khng.
T

1
T

U LI

diLI
L L m ax
L
L
dt
diLI (iL m ax iL min ) I L

dt
T iL min
T
T

U LII U LI

L
I L
T

(3.14)
(3.15)

U L U LI U LII 0

Do :

Xt phn t t in trong s hnh 3.6a: Khi ngun mt chiu c to bi b chnh lu, m

bo tnh cht ngun p cn mc t in C song song vi u vo BBXAMC. Gi tr ca t in ny c
th xc nh theo phng php tnh lc cho chnh lu.
Gi tr trung bnh ca dng qua t in ch gn xc lp cng bng khng:
I CI

1
T

I CII

C
0

1
T

duCI
C C min
C
C
dt
duCI (U C min U C m ax ) U C

dt
T UC m ax
T
T

C
0

duCII
C
dt
dt
T

U C m ax

duCII

U C min

C
C
(U Cmax U C min ) U C
T
T

(3.16)

(3.17)

ICI + ICII =0
Nh vy ch xc lp, gi tr trung bnh ca in p t ln in cm bng khng v gi tr
trung bnh ca dng in qua t C cng bng khng (i vi b bin i xung p).
Ton b nng lng u vo c cp cho ph ti, t s thay th ta c :
T

uidt u0i0 dt

u, i in p v dng in u vo ca b bin i.
u0, i0 in p v dng in u ra ca b bin i.
Nh vy cng sut u ra bng cng sut u vo:
T

1
1
uidt u0i0 dt

T 0
T 0

(3.18)

Trong ch xc lp nh ni trn, dng in coi nh bng phng, in p cng bng phng, ta

c:
U.I=U0.I0

(3.19)

Hnh 3.8 S thay th v in p trn t

U, U0, I, I0 l gi tr trung bnh ca in p v dng in u vo v u ra.
Gi tr trung bnh ca in p u ra i vi b bin i c in p ra nh hn in p vo s l:
U 0 .U
(3.20)
Gi tr trung bnh ca in p u ra i vi b bin i c in p ra ln hn in p vo s l:
1
U0
.U
(3.21)
1
1
Dng in trung bnh qua kho in t: IT
T

Idt .I

(3.22)

tnh gi tr ca in cm cng nh t lc, ngi ta cng dng phng php gn ng bng cch
tuyn tnh ho ng cong iL cng nh uC (thng tn s chuyn mch trong cc b bin i xung p rt
ln, nn vic tuyn tnh ho trong mt chu k i vi iL v uC l chp nhn c).
1
I0
T

1 T

Idt 1 .I

i vi s hnh 3.7, khi kho in t dn in 0 T , ta c:

(3.23)

L0

diL
U U0
dt

(3.24)

ngha l st p trn in cm bng hiu in p vo v in p ra.

V coi iL tuyn tnh nn:

diL I L 0

dt
.T

(3.25)

Thay (3.20) v (3.25) vo (3.24) ta c:

L0

I L 0
1 U
.T

L0

1 .T .U
I L 0

(3.26)

Cho gi tr IL0 10%I0 ta s tnh c gi tr L0 vi sai s ca kt qu khng ng k so vi tnh

ton theo biu thc gii tch.
T biu thc (3.19) v (3.20) rt ra I = .I0, do :
C
Coi uc tuyn tnh nn

dU C
I0 I 1 I0
dt

(3.27)

dU C U C
1 . .T .I 0

ta c: C
dt
.T
U C

(3.28)

Trong qu trnh iu chnh, gi tr cc i ca h s iu chnh max= (T 2.toff)/T m bo phc

hi kh nng kho ca van, vic chn tn s ng ct tu thuc vo t off sao cho toff =510%T. Ta c max =
(0.80.9)
3.4. B BIN I XUNG P MT NHP LM VIC VI PH TI L NG C
3.4.1. Ch ng c
in cm u ra ca b bin i xung p bao gm in cm phn ng ca ng c.
UAB s t gi tr cc i khi van T dn in (U ABE) v t gi tr cc tiu khi van T kha
(UAB=0). Khi van T b kho gi tr dng in trn ti l i t max thi im t1 v gim v gi tr cc tiu (it min)
thi im T.
p dng phng php tnh ton gn ng ta c:
i1 t I min

E Ut
t
L

(3.29)

i2 t I m ax

Ut
t
L

(3.30)

i1(t) l dng in qua ph ti khi kho ng mch: (0 t t1 ); t .T

i2(t) l dng in qua ph ti khi kho h mch: (t1 t T ); t 1 .T
E l in p u vo
Ut l in p trn ti (in p trn ng c)
i1 t1 I max , cn i2 T I min
T

1
; v T t1 f .
f

Hnh 3.9 B bin i xung p mt nhp

Gii phng trnh (3.29) v (3.30) ta nhn c:

Ut

(3.31)

Nh vy c tnh iu chnh ca b bin i s l ng tuyn tnh (hnh 3.10). V b bin i lm

vic gc phn t th nht trn mt phng to nn n c tn gi l b bin i mt nhp.
t1

T biu thc cn bng nng lng: U t .I t .T E.i1 t dt

0

Ut
E

Ta rt ra:
I min I t

E Ut
2 L. f

(3.32)

I m ax I t

E Ut
2 L. f

(3.33)

It

I min I max
2

(3.34)

Hnh 3.10. c tnh iu chnh

Gi tr trung bnh ca dng qua kho in t:

IT

t
1 1
1 I max I min t1
i1 t dt
I t .

T 0
T
2

Gi tr trung bnh ca dng qua diode:

(3.35)

ID

T
1
1 I max I min T t1
i2 t dt
It . 1

T t1
T
2

(3.36)

V in p ln nht t ln cc van s l: UT = UD = E
Cng sut s dng kho in t l: PT

Pt

(3.37)

Biu thc cho thy cng sut s dng van tt nht khi 1 . Trong thc t max 0.8-0.9 .
3.4.2. Ch dng in gin on
im gii hn gia ch dng lin tc v dng gin on tng ng vi iu kin I min= 0, t
(3.32) ta c:
It gii hn

E 1

(3.38)

2.L. f

Gi tr in cm m van m bo dng l lin tc khi cho trc dng in ph ti:

L gii han

E 1

(3.39)

2. f .It

Vi gi tr in cm xc nh, khi dng in nh hn I t gii hn, dng in trong mch ti s gin

on
T biu thc (3.29) v (3.30) vi gi thit Imin= 0, T1 l thi gian dn dng in ca kha in t v
t2 l thi gian dn dng in ca diode (xem hnh 3.9e,f,g), ta tm c:
i2 t2 0 I max

i1 T1 I max

Ut
t2
L

(3.40)

E Ut
T1
L
t2

Thay (3.41) vo (3.40) ta c:

(3.40a)

T1 E U t

(3.41)

Ut

Tnh gi tr trung bnh ca dng ti bng cch tch phn (3.29) v (3.30) thay cc biu thc (3.40a)
v (3.41) vo ta c:
t1

t2

I t i1 t .dt i2 t dt
0

t1

U
1 1 E Ut
1 2 E Ut
t
.
dt

T1 t

T 0 L
T t1
L
L

t dt

Sau mt s bin i ta c:
Ut
2
8 . f

. 1 2
E 4 . f
1

(3.42)

Vi L / Rt
Thay biu thc (3.31) vo (3.42) c th tnh c gi tr:
gii hn = 1- 2 . f
Thay vo (3.42) cng thc s c dng:
Ut
2

E 2 2 L.I t f
E

(3.43)
Hnh 3.11

Biu thc cho php xy dng c tnh iu chnh ca b bin i vng dng in gin on
(hnh 3.11). Trn hnh 3.11, c tnh ny c gii hn bi ng t nt It gii hn.
Ngoi vng It gii hn s l vng dng in lin tc v c tnh s c m t bi biu thc:
Ut = .E Rt.It

(3.44)

Rt l in tr cun khng v in tr phn ng ca ng c.

3.5. B BIN I XUNG P SONG SONG C IN P RA
NH HN IN P VO (B bin i xung p song song)

Hnh 3.12 Xung p song song

Khi van T dn (0 t1), ton b in p ngun c t vo cun cm L v cun cm s d tr
nng lng .
Khi van T b kho, ton b nng lng ca ngun v ca cun khng s t ln ti (dng in lc
ny l dng iL2 ng nt t). Nh nng lng tch tr trong in cm nn in p trn ti s ln hn
in p ngun. T C dng tch nng lng v lc in p ra. Khi van T m, nng lng ca t C s cp
cho ti duy tr cho in p trn ti dao ng trong mt phm vi nht nh.
Coi dng i qua in cm c mt gi tr:

IL

I Lmax I L min
2

(3.43)

Coi van ng m tc thi, lc s thay th ca b bin i s c dng nh hnh 3.13

Khi van T dn (0 t1), dng qua van iT = IL, in p ngc t ln diode uD = Ut. Trong khong
(t1T) khi van T b kho, dng qua diode s chnh thc l dng qua in cm: i D = IL = It. in p thun
t ln T uT = Ut.

Hnh 3.13. S thay th

in tr tng ng ca van T v diode s l:
RT

UT 1 U t

IT
IL

RD

U R Ut U D
Ut

.
ID
ID
1 IL

(3.44)
(3.45)

Trong : UT, UD l cc gi tr in p trung bnh trn T v diode. IT v ID l cc gi tr dng in

trung bnh chy qua T v diode. Da vo hnh 3.14b,c ta c:

I . T t1
I L .t1
I L . ; I D L
I L .(1 )
T
T
U . T t1
U
UT t
U t .(1 );U D t t1 U t .
T
T
IT

T s thay th ta c th tnh c gi tr trung bnh ca dng in v in p:

- Dng in qua diode: I D I t I L (1 ) I L IT I D
- Dng in qua van: IT I L .

It
(1 )

(3.46)

It
1

(3.47)

E0
I t R0
- in p ra trn ti (xt cn bng in p mch vng to): U t 1
2
1

(3.48)

- Sc in ng Et:
Et

E0
R0

R t I t
2
1 1

U R E0

(3.49)

I t R0
1

T (3.48) ta c th xc nh im cc tr khi: max 1

(3.50)
2 I t R0
ta c gi tr cc i ca in p ti:
E0

U t max

E
0
4 I t R0

(3.51)

Biu thc (3.51) cho thy in p ra (U t) s ln hn in p vo nu st p trn in tr ca ngun

(R0) nh hn 25% so vi in p ngun (E0).
Nu coi in p u vo v u ra l bng phng th in p t ln cun cm s l:
L

diL1
UR
dt

Hnh 3.14. th dng, p khi dng qua in cm lin

tc

(3.52)

Hnh 3.14. th dng, p khi dng qua in cm gin

on
di
U
Suy ra: L1 R const
dt
L
Do ta c th thay th o hm:
diL1 I L1 I L1

dt
t
.T
Thay vo (3.51) ta c:
I L1 .T .

UR
L

(3.53)

T C s phng in khi diode b kho (t1T), nu coi dng ti l bng phng th:
C

duC
It
dt

Gn ng ta c:
U C .T .

It
C

(3.54)

Biu thc (3.53) ng ch khi IL min >1, tc l:

U UR 1
L t
.
It

(3.55)

Khi cho cc sai s IL v UC, ta c th da vo (3.53) (3.55) tnh ra cc gi tr in cm L v

in dung C.

3.6. B BIN I XUNG P MT CHIU C IN P RA LN HN HOC NH HN

IN P VO

B bin i xung p (hnh 3.15) cho php iu chnh in p (U t) ln hn hoc nh hn in p

vo (E). Van in t T c ng m nh tn hiu iu khin U G. Khi van dn in , cun khng K c
tch mt nng lng nht nh t ngun E (dng np cho chun khng l dng i L1). Ti thi im t1 van T
b kho li, sc in ng t cm ca cun khng L s duy tr dng qua cun khng vn theo chiu c,
nng lng tch tr trong cun khng s c np cho ti v t C (dng i L2). Khi van T li dn in, t C
s phng in qua ti v duy tr cho in p trn ti l bng phng, ng thi cun khng li c tch
nng lng. th in p v dng in (hnh 3.16).
Tng ng trong khong 0 t1, dng qua van T l iT = iL1 (hnh 3.16e)
Trong khong t1 T, dng qua diode l ID = iL2 (hnh 3.16f)
in p trn cun khng s bng E khi van T dn v khi van T kho s c gi tr l U1.

Hnh 3.16. th xung

Khi van T dn, diode s chu mt in p ngc:
UD = E + U C = E + U t
Khi van T b kho, T s c mt in p thun :

UT = E + U C = E + U t

Hnh 3.17. S thay th

R0 - in tr trong ca ngun; RT - in tr ca van T; RD - in tr ca diode
Rt - in tr ca ti; Et - Ngun do t C to ra
Gi tr ca cc in tr tng ng trong s hnh 3.17 s l:
RT

UT 1 E U t
U
E Ut

.
; RD D
.
IT
I0 It
ID
1 I0 It

(3.56)

T s hnh 3.17 ta rt ra:

I 0 It
It
1
1
I L I 0 I1
It
1
Ut UC

.E0 .I t R0

1 1 2
2

(3.57)

.E0 2 .R0

E1

R
t It
2
1 1

U R E0
I t R0
1

Trong : I0, IL, U1, E1, UR, It l cc gi tr trung bnh

ng cong Ut s c im cc tr i vi . Nh vy khi thay i ta c th thay i c in p
ra. m bo c th tng in p ra ln hn vo, in tr trong ca ngun R 0 phi nh (xem cng
thc (3.55). Nu coi R0 l khng ng k, t (3.57) suy ra:
Ut

.E0
1

(3.58)

C th nhn thy Ut < E0 khi 0 < < 0,5 v Ut > E0 khi 0,5 < <1.
3.7. B BIN I XUNG P MT CHIU C O CHIU
B bin i xung p mt chiu dng van iu khin IGBT c kh nng thc hin iu chnh in
p v o chiu dng in ph ti. Cc diode m D 1D4 dng tr nng lng phn khng v ngun
v thc hin qu trnh hm ti sinh.
Trng thi 1: E. > ED ng c s lm vic gc phn t th nht. Nng lng cp cho ng c
c ly t ngun thng qua van T1 v T2 dn trong khong thi gian 0 t1. Trong thi gian cn li ca
chu k (t1T), nng lng tch tr trong in cm s duy tr cho dng in i theo chiu c v khp mch
qua T2 v D4 (hnh 3.19f). Dng in ti c m t trn hnh 3.18 l ng nt lin.

Hnh 3.18. B xung p c o chiu

Trng thi 2: E. < ED, ). ng c lm vic gc phn t th hai (ch hm).Trong khong thi
gian 0 t1 ng c s tr nng lng v ngun thng qua diode D 1 v D2 (ID1 = ID2 = It; ng It l ng
nt t trong s hnh 3.18). Trong khong t 1 T dng ti s khp mch qua T 4 (T4 dn) v D2
(ID2=ID4=It). Dng ti s c dng nh hnh 3.19h.
Trng thi 3: E. = ED.
Trong khong thi gian 0 t0 do ED > E. nn ng c s tr nng lng v ngun thng qua diode
D1 v D2 (iD1 = iD2 = it).

Hnh 3.19. Biu xung trong b bin i o chiu

Trong khong t0 t1 do E. > ED ng c chuyn sang lm vic ch ng c. Nng lng t
ngun qua cc van T1 v T2 c cp cho ng c (iT1 = iT2 = it)
Trong khong thi gian t1 t2 lc ny T1 b kho, T4 m. Nng lng tch tr trong cun cm s
cp cho ng c v duy tr dng in i qua T2 v D4 (iT2 = iD4 = it)

Trong khong t2 T khi nng lng tch tr trong in cm ht, sc in ng ca ng c s o

chiu dng in v dng ti s khp mch qua T 4 v D2 (it = iD2 = iT4). Qu trnh ny to ra tch lu nng
lng trong in cm v khi T4 b kho th UAB > E v qu trnh lp li nh ban u.
Mc d dng in ti i chiu, nhng do c s tham gia ca T4 v D4 vo qu trnh lm vic nn
trong khong t1 T in p trn ti (UAB) lun bng khng. Do dng in p trn ti s khng b bin
dng v thnh phn sng iu ho bc cao trong in p ph ti s nh nht.
Cu hi n tp
1. Cu trc v phn loi cc b bin i xung p ?
2. B bin i xung p mt chiu ni tip ?
3. Phng php tnh ton b bin i xung p ?
4. B bin i xung p mt nhp lm vic vi ph ti l ng c ?
5. B bin i xung p song song ?
6. B bin i xung p mt chiu c o chiu ?
Bi tp 1: B bin i xung p mt chiu ni tip nh hnh v, vi ti R-L c E=100V, phm vi
iu chnh = (0.2 - 0.9). Xc nh tham s chn tiristor v diode cho hai trng hp
sau:
1. Dng ti ln nht trong ton gii iu chnh Itmax=100A
2. in tr ti khng i trong ton di iu chnh, dng ti ln nht vn bng 100A.

Bi tp 2: B bin i xung p mt chiu song song nh hnh v, vi E=100V, It=10A,

= (0.2 - 0.8), ni tr ngun R0=0.5. Xc nh:
1. Phm vi iu chnh in p ra.
2. Tnh cc tham s chn IGBT v diode

Bi tp 2: B bin i xung p mt chiu c in p ra ln hn hoc nh hn in p vo nh

hnh v vi E=48V, It=20A, = (0.1 - 0.9), ni tr ngun R0=0.1. Xc nh:

1. Phm vi iu chnh in p ra.

2. Tnh cc tham s chn IGBT v diode