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  • SRA M: Sram and Dram

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    Shalabh Srivastava
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    This document discusses two types of computer memory technologies: SRAM and DRAM, and then focuses on Magnetoresistive random-access memory (MRAM) as a promising alternative. MRAM uses magnetic tunnel junctions (MTJs) as its basic memory unit. An MTJ consists of two ferromagnetic layers separated by a thin insulating layer, and it can store data as the relative orientation of the magnetic fields in each layer. The document explains how the magnetic fields are oriented to represent a 1 or 0, and how this affects the tunneling of polarized electrons across the junction, enabling data reading and writing.

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    MTJ

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    This document discusses two types of computer memory technologies: SRAM and DRAM, and then focuses on Magnetoresistive random-access memory (MRAM) as a promising alternative. MRAM uses magnetic tunnel junctions (MTJs) as its basic memory unit. An MTJ consists of two ferromagnetic layers separated by a thin insulating layer, and it can store data as the relative orientation of the magnetic fields in each layer. The document explains how the magnetic fields are oriented to represent a 1 or 0, and how this affects the tunneling of polarized electrons across the junction, enabling data reading and writing.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    9 views9 pages

    SRA M: Sram and Dram

    Uploaded by

    Shalabh Srivastava
    This document discusses two types of computer memory technologies: SRAM and DRAM, and then focuses on Magnetoresistive random-access memory (MRAM) as a promising alternative. MRAM uses magnetic tunnel junctions (MTJs) as its basic memory unit. An MTJ consists of two ferromagnetic layers separated by a thin insulating layer, and it can store data as the relative orientation of the magnetic fields in each layer. The document explains how the magnetic fields are oriented to represent a 1 or 0, and how this affects the tunneling of polarized electrons across the junction, enabling data reading and writing.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 9

    SRAM and DRAM

    SEMICONDUCTOR
    INDUSTRY

    SRA
    M
    MRA
    M

    DRA

    Magnetoresistive random access


    memory
    MRAM:

    small size
    low power consumption
    non-volatility
    Unit cells called MTJ

    MAGNETIC TUNNEL JUNTIONS


    (MTJ):
    Thin insulating non-magnetic
    material (IM) between the layers
    of two ferromagnetic materials

    NM

    FM

    Spin polarization -Ferromagnet


    Ferromagnate shown is
    pinned in specific direction
    Unpolarised current passed
    through ferromagnetic layer
    Polarised current tunnels
    through insulating layer (NM)

    2nd FM

    NM

    1st FM

    Magnetic tunnel junction-parallel


    Free layer (2nd FM) has same
    orientation as pinned Layer
    (1st FM)
    Polarised current tunnels
    through NM
    Current easily passes
    through 2nd Layer

    LOW MAGNETO
    RESISTANCE MR
    HIGH CONDUCTANCE G
    7

    FM

    NM

    FM

    Magnetic tunnel junction-atiparallel


    Free layer (2nd FM) has
    opposite orientation as
    pinned Layer (1st FM)
    Polarised current tunnels
    through NM
    Polarised current is reflected
    back by 2nd Layer

    HIGH MAGNETO
    RESISTANCE MR
    LOW CONDUCTANCE G
    7

    Magnetic tunnel junction-DOS

    DOS of each electron spin in the


    ferromagnetic electrode shifted against
    the other because of the exchange
    splitting caused by the internal
    magnetic field.
    Electron states closer to the Fermi
    energy predominantly contributes to
    the tunneling current
    Number of electrons that can tunnel
    through the barrier is limited by the
    number of filled states on the left
    electrode and the number of unfilled
    states on the right electrode
    TMR = =
    PL =
    PR =

    Transmission Electron Microscope - TEM

    (001)

    Transmission Electron Microscope - TEM

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