International eR] Rectifier PD-9.559C IRLZ44 HEXFET® Power MOSFET eoccee Ease of Parall © Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and The TO-220 package is universally preferred for all commercial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throug} Dynamic dv/dt Rating Logic-Level Gate Drive Ros(on) Specified at Vas=4V & 5V 175°C Operating Temperature Fast Switching ling Ros(on) = 0.0280 Ip = 50°A Vpgs = 60V cost-effectiveness, jhout the industry. dustrial TO-220AB Absolute Maximum Ratings Parameter Max. Units Ip @ Te=25°C _ | Continuous Drain Curent, Ves @ 5.0 V 50" Ip @ Tco= 100°C _| Continuous Drain Current, Vas @ 5.0 V Ey A Txt Pulsed Drain Current @ 200 Po @ Tc = 25°C _| Power Dissipation 150 w Linear Derating Factor 1.0 wre Ves Gate-to-Source Voltage 10) Vv Exs ‘Single Pulse Avalanche Energy ® 400 md dvidt Peak Diode Recovery dvict @ 45 Vins T ‘Operating Junction and “55 to +175 Tsra Storage Temperature Range °c ‘Soldering Temperature, for 10 seconds '300 (1.6mm from case) ‘Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. | Units Rose ‘Junetion-to-Case = : 1.0 Rocs Case-to-Sink, Flat, Greased Surface = 0.50 = eo Rava Junetion-to-Ambient = = 62 1493 PCSIRLZ44 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) LO Parameter] Min. Typ. T Max. [Units Test Conditions Vienss | Drain-to-Source Breakdown Volage | 60 | — , — | V_|Vcs-0V, lo= 250KA, ‘AVieryo5e/AT,| Breakdown Voltage Temp. Cosfficient_| — 10,070] — | VPC | Reference to 25°C, lo= 1mA Roosien Sialic Drain-lo-Source On-Resistance || —_10.028| | Vas=5.0V. In=31A © = |= [0.039 Vas=4.0V, In=% Ves Gate Threshold Volage to | — | 20) V_ Vo Ws Forward Transconductance 23 | —|—| 8 [vo | loss Drain-to-Source Leakage Current ——> = BA ; Gate to-Source Forward Leakage = [= 0], on Gate-to-Source Reverse Leakage = [= [00] Oy Total Gate Charge — |= [ee Qos Gate-to-Source Charge. = [= Fie | ac Ope Gate-to-Drain (Miller) Charge = [= Tas ton) Turn-On Delay Time = a7 | t Rise Time a ‘en “Tumn-Off Delay Time — afl tr Fall Time = [ate [= Fip=0.560_See Figure 10 © Between lead, ? bo Internal Drain Inductance — | 45) — &mm (025m) “cs nH from package ds ) ls Internal Source Inductance —{ 75] — | and center of dle contact I Can Taput Capacitance = [3300 , = Vas=0V Coss Output Capacitance [= Tr200 | —] pF | Voseasv Coss Reverse Transior Capacitance = [200 | — [f-LOMHe See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions 5 Continuous Source Current cee eae MOSFET symbol ° (Body Diode) eer a Showing the (ed , Tew Pulsed Source Current ee eee aay integral reverse Al /*14 (Body Diode) © pnjunction diode, 1s Veo Diode Forward Vollage == [25 | VW (125°C, lee B1A, Vesm0V © te Reverse Recovery Time — [190] 480 [ns _|T)=26°C, 51a Qn Reverse Recovery Charge = Toaa | 13 [uo |dist-t00Mus @ ton Forward Turn-On Time Tntinsic tuin-on time Is neglegibie (Lan-on is dominated by Ls+.o) Notes: © Repetitive rating; pulse width limited by @ Isps61A, didts250A/us, VoosVieni0ss, ‘max, junction temperature (Se Figure 11) Tyst75°C ® Voo=25V, starting Ty=25°C, L=179.H © Pulse width s 300 us; duty cycle <2%. Ag=25Q, las=51A (See Figure 12) * Current limited by the package, (Die Current =51A) 1404IRLZ44 Ip, Drain Current (Amps) |p, Drain Current (Amps) 2.5 PULSE’ WIOTH 250 ng re Vps, Drain-to-Source Voltage (volts) wt Fig 1. Typical Output Characteristics, To=25°C = Vpg = 25V 20s PULSE WIDTH 2a 8 35 a0 a3 50 Vas, Gate-to-Source Voltage (volts) 30 Fig 3. Typical Transfer Characteristics Ip, Drain Current (Amps) Rogion) Drain-to-Source On Resistance (Normalized) 109 wot ro wo Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C 3.0 Par 20 ves = 5V 0 “go Sov a Capacitance (pF) 7 fete Ly o oP Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Igo, Reverse Drain Current (Amps) Yes = os Te 1s 20 BST Vso, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage Veg, Gate-to-Source Voltage (volts) Ip, Drain Current (Amps) He T FoR TEST CHAGUTT SEE FIGURE 13 0 750 6070 Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage : OPERATION IN THIS AREA LIMITED 8Y, os on) since puse| Tag PE gee Se Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area TeeIRLZ44 Vos —y—--— a TT r Tort oval shsveo coh 2 Palo With < tus E a Duiy Factors 1% = FEE 8 Fig 10a. Switching Time Test Circuit gx s Vos Bo tee 3 re 10% 5 es ira 5 To, Case Temperature (°C) Seon ‘act Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 N gt 2 8 g 3 a a Bos z ° SINSLE PULSE NOTES: (THERMAL. RESPONSE! 1 DUTY FACTOR, Ott, 7 2. PEAK Typ x 2, 10° 108) 10) 1 107 4 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11, Maximum Effective Transient Thermal Impedance, Junction-to-Case 1497IRLZ44 TER! 000 % reat! a F xo orton Sth E S Ly 5 Ect © og 2 5 } 0 ul ia » peas ey Sa y 8m 7S 100 aes aka 7 ‘Starting Ty, Junction Temperature(*C) bs — — — ee Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms eeu Cutten Curent Regulator “Vos fe = Ip cues! Serping Aossee Fig 13a, Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information — See page 1516 Intem ati ional Appendix E: Optional Leadforms - See page 1525 age zeR| Rectifier 1498