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  • P2610ATG - N - 100V 50A 128W - 26 Mohms

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    pastilhas
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    This document summarizes the specifications of an N-channel enhancement mode MOSFET. The MOSFET has a maximum drain-source breakdown voltage of 100V, an on-resistance of 26mΩ at a gate-source voltage of 10V, and can handle continuous and pulsed drain currents of 50A and 200A respectively. Key electrical characteristics include a gate threshold voltage between 1.5-4V and a forward transconductance of 38S at a drain current of 25A. Thermal characteristics show a junction-to-case thermal resistance of 0.97°C/W and a junction-to-ambient thermal resistance of 62.5°C/W.

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    Datasheet Mosfet Canal N

    Original Title

    P2610ATG - N - 100V 50A 128W - 26 mOhms

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    This document summarizes the specifications of an N-channel enhancement mode MOSFET. The MOSFET has a maximum drain-source breakdown voltage of 100V, an on-resistance of 26mΩ at a gate-source voltage of 10V, and can handle continuous and pulsed drain currents of 50A and 200A respectively. Key electrical characteristics include a gate threshold voltage between 1.5-4V and a forward transconductance of 38S at a drain current of 25A. Thermal characteristics show a junction-to-case thermal resistance of 0.97°C/W and a junction-to-ambient thermal resistance of 62.5°C/W.

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    © All Rights Reserved
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    68 views4 pages

    P2610ATG - N - 100V 50A 128W - 26 Mohms

    Uploaded by

    pastilhas
    This document summarizes the specifications of an N-channel enhancement mode MOSFET. The MOSFET has a maximum drain-source breakdown voltage of 100V, an on-resistance of 26mΩ at a gate-source voltage of 10V, and can handle continuous and pulsed drain currents of 50A and 200A respectively. Key electrical characteristics include a gate threshold voltage between 1.5-4V and a forward transconductance of 38S at a drain current of 25A. Thermal characteristics show a junction-to-case thermal resistance of 0.97°C/W and a junction-to-ambient thermal resistance of 62.5°C/W.

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    © All Rights Reserved
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    of 4

    P2610ATG

    N-Channel Enhancement Mode MOSFET


    PRODUCT SUMMARY
    V(BR)DSS

    RDS(ON)

    ID

    100V

    26m @VGS = 10V

    50A

    TO-220

    100% UIS tested


    ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)
    PARAMETERS/TEST CONDITIONS

    SYMBOL

    LIMITS

    UNITS

    VGS

    20

    Gate-Source Voltage
    Continuous Drain Current
    Pulsed Drain Current
    Avalanche Current

    TC = 25 C
    TC = 100 C

    Avalanche Energy

    L = 0.3mH
    TC = 25 C

    Power Dissipation

    31

    IDM

    200

    IAS

    77

    EAS

    900

    mJ

    128

    PD

    TC = 100 C

    Operating Junction & Storage Temperature Range

    50

    ID

    51

    TJ, TSTG

    -55 to 150

    TL

    275

    Lead Temperature ( /16" from case for 10 sec.)

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE

    SYMBOL

    TYPICAL

    MAXIMUM

    Junction-to-Case

    RJC

    0.97

    Junction-to-Ambient

    RJA

    62.5

    Case-to-Heatsink

    RCS

    UNITS

    C / W

    0.5

    Pulse width limited by maximum junction temperature.

    Ver 1.0

    2011/4/8

    P2610ATG
    N-Channel Enhancement Mode MOSFET
    ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
    PARAMETER

    SYMBOL

    TEST CONDITIONS

    LIMITS
    MIN

    UNIT

    TYP

    MAX

    2.3

    4.0

    STATIC
    Drain-Source Breakdown Voltage
    Gate Threshold Voltage

    V(BR)DSS

    VGS = 0V, ID = 250A

    100

    VGS(th)

    VDS = VGS, ID = 250A


    VDS = 0V, VGS = 20V

    1.5

    Gate-Body Leakage

    IGSS

    Zero Gate Voltage Drain Current

    IDSS

    On-State Drain Current1


    Drain-Source On-State

    ID(ON)

    VDS = 10V, VGS = 10V

    RDS(ON)

    VGS = 10V, ID = 25A

    21

    gfs

    VDS = 40V, ID = 25A

    38

    Forward Transconductance

    250

    nA

    VDS = 80V, VGS = 0V

    VDS = 80V, VGS = 0V , TJ = 125 C

    10

    50

    A
    26

    m
    S

    DYNAMIC
    Input Capacitance

    Ciss

    Output Capacitance

    Coss

    Reverse Transfer Capacitance

    Crss

    186

    Qg

    79

    Total Gate Charge

    Gate-Source Charge

    Qgs

    4900
    VGS = 0V, VDS = 25V, f = 1MHz

    VDS = 80V, VGS = 10V, ID = 50A

    887

    31

    Qgd

    30

    Turn-On Delay Time2

    td(on)

    25

    tr

    Gate-Drain Charge
    Rise Time

    Turn-Off Delay Time

    td(off)

    Fall Time2

    VDD = 50V,
    ID 50A, VGS = 10V, RGEN = 25

    tf

    pF

    nC

    250

    nS

    110
    140

    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)


    Continuous Current
    1

    IS
    IF = IS, VGS = 0V

    50

    1.5

    Forward Voltage
    Reverse Recovery Time

    VSD
    trr

    100

    nS

    Reverse Recovery Charge

    Qrr

    380

    nC

    Pulse test : Pulse Width 300 sec, Duty Cycle 2.

    Independent of operating temperature.

    Ver 1.0

    2011/4/8

    P2610ATG
    N-Channel Enhancement Mode MOSFET

    Ver 1.0

    2011/4/8

    P2610ATG
    N-Channel Enhancement Mode MOSFET

    Ver 1.0

    2011/4/8

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