EEE 2202 ANALOGUE ELECTRONICS ASSIGNMENT

a) What is Hall effect? Explain atleast six uses of Hall effect.

b) Give seven advantages of semiconductors devices.
c) At 300K, the intrinsic carrier contentration of silicon is 1.5 10
16
M
-3
. If the electron and
hole mobilities are 0.13 and 0.05 m
2
/(V.s) respectively, determine the intrinsic resistivity of
silicon at 300K.
d) Explain the terms i) Amphoteric impurity and ii) Compensated semiconductor.
e) What is the position of the Fermi level in an intrinsic semiconductor? How does its position
change when i) Donors, and ii) Acceptors are added to the semiconductor.? What happens if
the temerature is raised?
f) For a common collector configuration, derive the relation I
E
=
0
I
B
+ I
CEO.
What is early
voltage? Illustrate .
g) In the C
E
amplifier circuit shown below, R
1
= 72 K, R
2
= 8K, R
L
= 2K, R
E
= 700
ohms, and R
C
= 2 K and V
CC
= 15V. Assume = 120 and V
BE
= 0.7V.


i) Draw the dc loadline and find the Q point.
ii) Draw the ac load line
iii) If the input ac signal V
I
has the amplitude of 1 mV, find the amplitude of the
output voltage V
O.
(Take the input resistance of the amplifier, Rin = 1.5K. All the
capacotors act as ac shorts).
h) An npn transistor is used as a CE amplifier and has the collector to base bias
arrangement shown below. Given: = 99, VBE = 0.7V, VCC = 12V, RL = 2K and RB =
100K. Find the Q- point analytically and the stability factor S,S and S.

i) For the following types of MOSFETS (i.e DE MOSFET and E MOSFET), discuss their
construction, principle of operation and their static characteristics.
j) The pinch off voltage of a P channel JFET is V
p
=5V, and I
DSS
= -40mA. The drain
source voltage V
DS
is such that a saturated drain current I
DS
= -15mA is maintained. Find the
gate source voltage V
GS
.
(TO BE SUBMITTED ON 12
TH
JULY WITHOUT FAIL)