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STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
Course Breakup
CONFIDENTIAL
DAY 1
Defects & Yield
DAY 2
Memory DFT
ATPG Concepts
Scan DFT
Scan Diagnostics
At-Speed Testing
Conclusion
STMicroelectronics - 2005
Lesson Outline
CONFIDENTIAL
- Test
- Cost of Test
- Yield
- Defect Level
STMicroelectronics - 2005
Lesson Objectives
CONFIDENTIAL
Define Defects and Faults Describe the meaning of Test and to understand the Test Cost Define Defect Level as a function of Yield and Fault Coverage
STMicroelectronics - 2005
GDS II
FAB Wafer Out Die packaging Board testing
STMicroelectronics - 2005
Definitions
CONFIDENTIAL
Design synthesis
Given an I/O function, develop a procedure to manufacture a device using known materials and processes.
Verification
Predictive analysis to ensure that the synthesized design, when manufactured, will perform the given I/O function.
Test
A manufacturing step that ensures that the physical device, manufactured from the synthesized design, has no manufacturing defect.
STMicroelectronics - 2005
STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
CONFIDENTIAL
Physical Defect: A on-chip flaw introduced during fabrication or packaging of an individual ASIC that leads to a logical malfunction.
Short Circuit
Typical Examples
Open Circuit
Transistor Stuck ON
Oxide Pinholes
STMicroelectronics - 2005
0.18 m m
Ground Rail
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
Input Open
IN
Input Shorted to 0
OUT
GROUND
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
What is a Fault ?
CONFIDENTIAL
Fault is the manifestation of a physical defect or defects. A Fault Model abstracts the defects at the logic gate level. Fault Models represent different types of fault
Test Type
Functional Structural
Fault Model
Functional Model Single Stuck-at, Multiple Stuck-at, Bridging, Stuck Open Transition, path delay
Defects
Opens/Shorts in circuit CMOS Transistor stuck-open, short, resistive bridging, Leaky transistors. Partially conducting transistors, resistive contacts, failing vias.
At-Speed
STMicroelectronics - 2005
An Example
CONFIDENTIAL
Physical Defect : A metal via may be missing between VDD supply and the drain of an CMOS inverter.
POWER POWER
IN
OUT
IN
OUT
GROUND
GROUND
This defect can be a Functional Fault in a Memory, but only a Transition Fault in a CMOS Inverter.
STMicroelectronics - 2005
Test
STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
STMicroelectronics - 2005
Real Tests
CONFIDENTIAL
Based on analyzable fault models, which may not map on real defects. Incomplete coverage of modeled faults due to high complexity. Some good chips are rejected. The fraction (or percentage) of such chips is called the yield loss. Some bad chips pass tests.The fraction (or percentage) of bad chips among all passing chips is called the defect level.
STMicroelectronics - 2005
Fabricated chips
Sold Chips
Bad chips
STMicroelectronics - 2005
Cost of Test
CONFIDENTIAL
Manufacturing test
Automatic test equipment (ATE) capital cost Test center operational cost
STMicroelectronics - 2005
Cost of Test
CONFIDENTIAL
Low number of DPM is very critical Cost to replace parts grows exponentially through a design cycle Cost of bad part in critical device(for example, a pacemaker or airplane is immeasurable)
$10000
$1000 $100
$10
$1
SPEC Analysis Design Test Production Field
STMicroelectronics - 2005
Yield
FTM- Central CAD & Design Solutions
STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
A manufacturing defect is a finite chip area with electrically malfunctioning circuitry caused by errors in the fabrication process. A chip with no manufacturing defect is called a good chip. Fraction (or percentage) of good chips produced in a manufacturing process is called the yield. Yield is denoted by symbol Y.
Cost of a chip:
Cost of fabricating and testing a wafer Yield x Number of chip sites on the wafer
FTM- Central CAD & Design Solutions DFT Design Methodologies
STMicroelectronics - 2005
Good chips
Faulty chips
Clustered Defects
Wafer yield = 17/22 = 0.77
STMicroelectronics - 2005
YIELD Parameters
CONFIDENTIAL
Defect density (d ) = Average number of defects per unit of chip area Chip area (A) Clustering parameter ()
(Ad /) x
(1+Ad /) +x
Where is the gamma function = 0, P(x ) is a delta function (maximum clustering) = , P(x ) is Poisson distribution (no clustering)
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
YIELD Equation
CONFIDENTIAL
Y = ( 1 + Ad / )
Unclustered defects: =
Y = e Ad
STMicroelectronics - 2005
Defect Level
STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
Determination of DL
CONFIDENTIAL
Chips failing in the field are returned to the manufacturer. The number of returned chips per million chips shipped is the DL.
Fault coverage of tests and chip fallout rate are analyzed. A modified yield model is fitted to the fallout data to estimate the DL.
STMicroelectronics - 2005
Determination of DL
Three parameters:
CONFIDENTIAL
Fault density, f = average number of faults per unit chip area Fault clustering parameter, Fault coverage, T
Y (T ) = (1 + TAf / ) (1 Af)T
Assuming that tests with 100% fault coverage (T = 1.0) remove all faulty chips,
Y = Y (1) = (1 + Af / ) (1-Af)
DL(T) =
DL(T) = 1 Y
(1-T)
STMicroelectronics - 2005
Defect level (DL) is the ratio of faulty chips among the chips that pass tests. DL is measured as parts per million (ppm). DL is a measure of the effectiveness of tests. DL is a quantitative measure of the manufactured product quality. For commercial VLSI chips a DL greater than 500 ppm is considered unacceptable.
STMicroelectronics - 2005
Summarizing DL
CONFIDENTIAL
IC Fabrication
Yield Y (Fraction of good parts)
DL(T) =
Y (T) - Y(1)
Y(T)
where Y = Yield T = Fault Coverage Passed die Yield = --------------------------Passed + Failed die
Test
Reject / Diagnose
Shipped parts (good & bad) bad => Defect Level (DL) in Defective parts per million (DPM)
STMicroelectronics - 2005
Test Program
Test Escapes: Parts that pass every test, but still have undetected defectsand reach users!
ATE
Defect Level: The fraction of test escapes, in defective parts per million (DPM).
STMicroelectronics - 2005
Bus interface controller ASIC fabricated and tested at IBM, Burlington, Vermont 116,000 equivalent (2-input NAND) gates 304-pin package, 249 I/O Clock: 40MHz, some parts 50MHz
STMicroelectronics - 2005
ST Chip Features
CONFIDENTIAL
Project A
130 nm process Consumer market High-runner product >1M EGates logic 5 clock domains 100MHz (max) Full-scanned no compression ~50k flip-flops 32 scan chains
Project B
90nm process Network application High-volume product 2M EGates logic 17 clock domains 250MHz (max) Full-scanned with compression 141k flip-flops 1611 internal scan chains 30 external chains
STMicroelectronics - 2005
Project A Top-off BF
Project B BF
STMicroelectronics - 2005
Preliminary Results
CONFIDENTIAL
Project A Test type: EWS #Tested dices: ~ 111k Yield ~ 80% Bridging fault test
Project B Test type: EWS #Tested dices: ~ 250k Yield ~ 50% Bridging fault test
Failing dices = 2
Failing dices = 84
dppm = 18
dppm = 337
dppm = 9
dppm = 164
STMicroelectronics - 2005
DL = 1 -Y Y
(1-T) (1-T)
Y = 10% Y = 10%
Y = 30% 70% Y =Y 90% = 90%
1 10 10 0 00 0
40% 40% 40% 30% 30% 30% 20% 20% 20% 10% 10% 10%
0% 0%
10 1 10
2 20 0 2 0
3 3 30 0 0
40 0
5 50 0
6 60 0
7 70 0
8 80 8 0 0
9 90 0 9 0
0 0 0
Lesson Review
CONFIDENTIAL
What is a Fault ?
What is the difference between Test and Verification ?
STMicroelectronics - 2005
Summary
CONFIDENTIAL
VLSI yield depends on two process parameters, defect density (d ) and clustering parameter (). Yield drops as chip area increases; low yield means high cost. Fault coverage measures the test quality. The number of DEFECTIVE PARTS sold as good is Defect level (DL). DL or reject ratio is a measure of chip quality. DL can be determined by an analysis of test data.
STMicroelectronics - 2005
Backup Slides
STMicroelectronics
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
DL
DL = 1 - Y
FTM- Central CAD & Design Solutions DFT Design Methodologies STMicroelectronics - 2005
(1-T)
CONFIDENTIAL
DL = =1 1-Y DL
(1-T) (1-T) Y
$
55 00 66 00 77 00
Y = 10%
11 00 00
33 00
44 00
88 00
99 00
00
Voids in Cu CONFIDENTIAL
STMicroelectronics - 2005