Introduction to Microelectronic Fabrication Second Edition

CHAPTER 9
9.1 10 nm = 10-8 m = 10-6 cm = 100. V = (5 x 106 V/cm) x Tox = 5 x 106 x 10-6 = 5 volts. (a) The built-in potential = 0.56 + 0.0258 ln (1015/1010) = 0.857 V. The total voltage across the junction is (3 + 2 + 0.857) = 5.86 volts. Dividing by the background concentration yields a value of 5.86 x 10-15 V-cm3. From Fig. 9.4, the depletion layer width will be 3.0 m. The minimum line spacing must be twice this value or 6.0 m. 2( 11 .7 )(8 .854 x10 14 )(5.86 ) Using Eq. 9.3 directly, 2 Wd = 2 = 5.51 m . 1.602 x10 19 ( 10 15 ) (b) The built-in potential = 0.56 + 0.0258 ln (3x1016/1010) = 0.945 V. 2 Wd = 2 2( 11 .7 )(8 .854 x10 14 )(5.95 ) 1.602 x10 19 (3 x10 16 ) = 1.01 m

9.2

9.3

The built-in potential is bi = 0.56 + 0.0258 ln (3x1016/1010) = 0.945 V. For NB = 3 x1016 /cm3, Eqn. 9.3 becomes W = 2.08 x 10-5 VA + bi . At the source side, the depletion layer has only the built-in potential across the junction, and Wd = 0.202 m. At punch-through, the depletion-layer width at the drain will be (1-0.202) = 0.798 m. Finding VA for Wd = 0.798 m yields an applied voltage of 13.8 volts.

9.4
4

-1

-2

-3

-4 10 14

10 15

10 16 10 17 3 Doping Concentration (#/cm )

10 18

10 19

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2002 Prentice Hall

Introduction to Microelectronic Fabrication Second Edition

9.6

From Fig. P9.6, NB = 2 x 1015/cm3. Using Eq. 9.2, the threshold voltage with no implant would be VTN 0 V. The shift caused by the implant is VTN = qQi/CO, so we need the implanted dose which is given by Q = 2 N P R P with the implant peak at the surface. The characteristics of the implant are found by subtracting the background concentration from the profile in Fig. P9.6. The peak concentration of the implant is 2 x 1016/cm3 at x = 0, and the implanted profile drops to 4 x 1015 at x = 0.25 m. The projected range is found from 4 x 1015 = 2 x 1016 exp-(0.25)2/2Rp2, and the projected range is 0.139 m. The dose Q = 2 (2 x10 16 ) ( 1.39 x10 5 ) =
6.99 x 1011/cm2. The oxide capacitance is 1.73 x 10-7 F/cm2 for a 20 nm gate oxide. VTN = (1.602 x10-19)(6.99x1011)/(1.73x10-7) = 0.647 V. So the resulting threshold voltage is 1.61V.

9.16

Contacts

Thin Oxide

Metal

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2002 Prentice Hall