SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2349

DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low saturation voltage APPLICATIONS www.DataSheet4U.com Horizontal deflection output for color TV
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings (Ta=25 )

SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 10 20 5 50 150 -55~150 V A A A W UNIT V

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time ICP=7A ;IB1=1.4A;fH=15.75kHz tf Fall time CONDITIONS IE=300mA , IC=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=7A 83 10 6 1 MIN 5

2SD2349

SYMBOL V(BR)EBO VCEsat

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TYP.

MAX

UNIT V

5.0 1.5 1 250

V V mA mA

VBEsat ICBO IEBO hFE-1 hFE-2 fT COB VF ts

9 3 170 1.8 12 0.7 MHz pF V s s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SD2349

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Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)