PD - 95397

HEXFET Power MOSFET

Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description
l l
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7 6 5

IRF7509PbF
D1 D1 D2 D2

N-Ch

P-Ch

VDSS

30V

-30V

P-CHANNEL MOSFET

Top View

RDS(on) 0.11 0.20

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

Micro8

Absolute Maximum Ratings

Parameter
VDS ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 30 2.7 2.1 21

Max.
P-Channel -30 -2.0 -1.6 -16

Units
V A W W mW/C V V V/ns C

1.25 0.8 10 20 30 5.0 -55 to + 150 240 (1.6mm from case)

Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient

Max.
100

Units
C/W

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1
6/15/04

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 1.9 0.92 Typ. Max. 0.059 -0.039 0.09 0.110 0.14 0.175 0.17 0.20 0.30 0.40 1.0 -1.0 25 -25 100 7.8 12 7.5 11 1.2 1.8 1.3 1.9 2.5 3.8 2.5 3.7 4.7 9.7 10 12 12 19 5.3 9.3 210 180 80 87 32 42 Units V V/C V S A Conditions V GS = 0V, I D = 250A V GS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA V GS = 10V, I D = 1.7A V GS = 4.5V, ID = 0.85A V GS = -10V, I D =-1.2A V GS = -4.5V, I D =-0.6A V DS = VGS, I D = 250A V DS = VGS, I D = -250A V DS = 10V, I D = 0.85A V DS = -10V, I D = -0.6A V DS = 24 V, V GS = 0V V DS = -24V, V GS = 0V V DS = 24 V, VGS = 0V, TJ = 125C V DS = -24V, V GS = 0V, TJ = 125C V GS = 20V N-Channel I D = 1.7A, VDS = 24V, VGS = 10V P-Channel I D = -1.2A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, I D = 1.7A, RG = 6.1, RD = 8.7 P-Channel VDD = -15V, ID = -1.2A, RG = 6.2, RD = 12 N-Channel VGS = 0V, VDS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) g fs I DSS I GSS Qg Q gs Qgd td(on) tr t d(off) tf C iss C oss C rss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

nC

ns

pF

Source-Drain Ratings and Characteristics

Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.25 -1.25 A 21 -16 1.2 TJ = 25C, IS = 1.7A, V GS = 0V V -1.2 TJ = 25C, IS = -1.8A, VGS = 0V 40 60 N-Channel ns 30 45 TJ = 25C, IF = 1.7A, di/dt = 100A/s 48 72 P-Channel nC TJ = 25C, I F = -1.2A, di/dt = -100A/s 37 55

Repetitive rating; pulse width limited by

Notes:

max. junction temperature. ( See fig. 21 )

Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.

N-Channel ISD 1.7A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C

P-Channel ISD -1.2A, di/dt 160A/s, VDD V(BR)DSS, TJ 150C

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N - Channel
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

IRF7509PbF
100

I D , Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

10

10

3.0V

3.0V

0.1 0.1 1

20s PULSE WIDTH TJ = 25C A

10

0.1 0.1 1

20s PULSE WIDTH TJ = 150C A

10

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

Fig 2. Typical Output Characteristics

100

I D , Drain-to-Source Current (A)

10

TJ = 25C TJ = 150C

ISD , Reverse Drain Current (A)

10

TJ = 150C TJ = 25C

0.1 3.0 3.5 4.0 4.5

V DS = 10V 20s PULSE WIDTH

5.0 5.5 6.0

0.1 0.4 0.8 1.2 1.6

VGS = 0V

2.0

VGS , Gate-to-Source Voltage (V)

VSD , Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode Forward Voltage

0.220

2.0

R DS(on) , Drain-to-Source On Resistance (Normalized)

I D = 1.7A

1.5

R DS (on), Drain-to-Source On Resistance

0.180

VGS = 4.5V
0.140

1.0

0.5

0.100

VGS = 10V

0.0 -60 -40 -20 0 20 40 60 80

VGS = 10V

100 120 140 160

0.060

10

TJ , Junction Temperature (C)

I D , Drain Current (A)

Fig 5. Normalized On-Resistance Vs. Temperature

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Fig 6. Typical On-Resistance Vs. Drain Current

IRF7509PbF
0.140

N - Channel
100

R DS (on) , Drain-to-Source On Resistance

OPERATION IN THIS AREA LIMITED BY RDS(on)

ID , Drain Current (A)

0.120

10

10us

ID = 2.7A
0.100

100us

1ms

0.080

0.060

12

16

0.1

TC = 25 C TJ = 150 C Single Pulse

1 10

10ms

VGS , Gate-to-Source Voltage (V)

100

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate Voltage

400

Fig 8. Maximum Safe Operating Area

C, Capacitance (pF)

300

Ciss Coss

200

VGS , Gate-to-Source Voltage (V)

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd

20

I D = 1.7A V DS = 24V V DS = 15V

16

12

100

Crss

0 1 10 100

0 0 2 4 6

FOR TEST CIRCUIT SEE FIGURE 9

8 10 12

VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

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P - Channel
10
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

IRF7509PbF
10

-ID , Drain-to-Source Current (A)

-ID , Drain-to-Source Current (A)

VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

-3.0V

-3.0V

0.1 0.1 1

20s PULSE WIDTH TJ = 25C A

10

0.1 0.1 1

20s PULSE WIDTH TJ = 150C A

10

-VDS , Drain-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 11. Typical Output Characteristics

10

Fig 12. Typical Output Characteristics

10

-ID , Drain-to-Source Current (A)

TJ = 25C TJ = 150C

-ISD , Reverse Drain Current (A)

TJ = 150C TJ = 25C

0.1 3.0 4.0 5.0

VDS = -10V 20s PULSE WIDTH

6.0 7.0

0.1 0.4 0.6 0.8 1.0

VGS = 0V
1.2

1.4

-VGS , Gate-to-Source Voltage (V)

-VSD , Source-to-Drain Voltage (V)

Fig 13. Typical Transfer Characteristics

2.0

Fig 14. Typical Source-Drain Diode Forward Voltage

RDS(on) , Drain-to-Source On Resistance ( )
1.5

R DS(on) , Drain-to-Source On Resistance (Normalized)

I D = -1.2A

1.5

1.0

VGS = -4.5V

1.0

0.5

0.5

0.0 -60 -40 -20 0 20 40 60 80

VGS = -10V

VGS = -10V
0.0 0 1
-I

100 120 140 160

TJ , Junction Temperature (C)

, , Drain Current (A)

Fig 15. Normalized On-Resistance Vs. Temperature

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Fig 16. Typical On-Resistance Vs. Drain Current

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RDS(on) , Drain-to-Source On Resistance ( )
0.60

P - Channel

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

0.50

-I I D , Drain Current (A)

10

10us

0.40

= -2.0A

100us

0.30

1ms

0.20

0.10

3
-V

12

15

0.1

TC = 25 C TJ = 150 C Single Pulse

1 10

10ms

100

/5

, Gate-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 17. Typical On-Resistance Vs. Gate Voltage

400

Fig 18. Maximum Safe Operating Area

20

-V GS , Gate-to-Source Voltage (V)

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd

I D = -1.2A VDS = -24V VDS = -15V

16

C, Capacitance (pF)

300

Ciss
C oss
200

12

100

Crss

0 1 10 100

0 0 2 4 6

FOR TEST CIRCUIT SEE FIGURE 9

8 10 12

-VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage

N-P - Channel
1000

Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage

Thermal Response (Z thJA )

100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100

0.1 0.00001

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7509PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS D -B3 D D D D 8 7 6 5 H 0.25 (.010) 1 2 3 4 S S S G e 6X e1 A -CB 8X 0.08 (.003) M A1 C A S B S 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1 2 3 4 D1 D1 D2 D2 8 7 6 5 DUAL 1 2 3 4
DIM INCHES MIN MAX MILLIMETERS MIN MAX

A A1 B C D e e1 E H L

.036 .004 .010 .005 .116

.044 .008 .014 .007 .120

0.91 0.10 0.25 0.13 2.95

1.11 0.20 0.36 0.18 3.05

8 7 6 5 E -A-

.0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6

0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6

NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.

0.65 6X ( .0256 )

Micro8 Part Marking Information

EXAMPLE: THIS IS AN IRF7501

LOT CODE (XX)

DATE CODE (YW) - See table below Y = YEAR W = WEEK P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL)

PART NUMBER

WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D

WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D

24 25 26

X Y Z

50 51 52

X Y Z

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IRF7509PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04

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