EE210: Microelectronics-I

Lecture-3 : PN Junction Diode

B. Mazhari Dept. of EE, IIT Kanpur

B. Mazhari, IITK 1G-Number

PN Junction diode-1

0.10 0.08 0.06

ID(A A)

V 0.7V

0.04 0.02 0.00 0.0 0.2 0.4 0.6 0.8 1.0

2G-Number

VD (V)
B. Mazhari, IITK

PN Junction diode-2
1.0
V

800.0n 600.0n

V 0 2V 0.2V

ID( (A)

400.0n 200.0n 0.0

0.0

0.2

0.4

0.6

0.8

1.0

VD (V)
B. Mazhari, IITK 3G-Number

PN Junction diode-1

0.10 0.08 0.06

ID(A A)

0.04 0.02 0.00 0.0

Current = ??

0.2

0.4

0.6

0.8

1.0
4G-Number

VD (V)
B. Mazhari, IITK

3Qs
How can the same diode be like a battery of ~0 7V ~0.7V and 0.3V as well? Is current below 0.7V zero ?

Why is a diode unable to rectify high frequency sinusoids?

B. Mazhari, IITK

5G-Number

Outline
S i Semiconductor: B i d t Basics PN J Junction Di d ti Diode
Basic Operation dc model small signal model

B. Mazhari, IITK

6G-Number

Semiconductors: Basics

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7G-Number

Energy Bands

Conduction Band Ec Ev 3p 2s 1s Atom

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Eg Valence Band Vl B d

Bands Solid (crystal)

G-Number

A completely full band of electrons cannot contribute to current conduction ! 8

Eg

Ec Ev

Eg=1.12 eV for Silicon 1 12

o

n = p = ni ni = 1.45 * 1010 cm-3 ( T = 300K)

ni exp(
B. Mazhari, IITK

Eg 2 kT

)
9G-Number

J=E
I V 1 L ; R R W

i = q( n+p )ni i 4 * 10-6 -1 cm-1 i 2 * 105 cm

B. Mazhari, IITK 10 G-Number

Doping
Si Si Si Si Si Si Si

N-Type Semiconductor
Si As Si Si Si
ND + N D + e-

ND = 1016 cm-3 n 1016 cm-3

3 p ni2/ 2 * 104 cm-3 /n

n >> p
B. Mazhari, IITK 11 G-Number

Small amount of impurity results in large change in resistivity !

No. of Silicon atoms / volume = 5 * 1022 cm-3
-7 10 22 = 2 * 10 5 * 10

16

(0.2PPM)

ND= 10
5 : 2 * 10 cm

16

cm

-3

1.5 cm

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12 G-Number

P-Type Semiconductor
Si Si Si Si Si Si Si Si B Si Si Si
NA + e
-

+ NA + h

3 NA = 1016 cm-3

p 1016 cm-3 n n12 / p = 2 * 104 cm-3 p >> n

B. Mazhari, IITK 13 G-Number

Number of carriers is dependent on temperature !

n
Si

Si Si Si

Si Si Si

Si As Si

Si Si

donor freezeout

1/T
B. Mazhari, IITK 14 G-Number

Current flow Drift due to Electric field

E e
Jn = qnnE Jp = qppE J = Jn + Jp
-

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15 G-Number

Current flow Diffusion to Diff i t concentration gradient t ti di t

p(x) n(x)

J n qDn
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n x

J p qD p

p x
16 G-Number

PN Junction Diode

B. Mazhari, IITK

17 G-Number

PN Junction Diode

P N