Power Thyristor Data Sheets

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E1
TO-92 *TO-220 Isolated
3-lead Compak
TO-252 D-Pak TO-202 TO-251 V-Pak
MT2
MT1
Sensitive Triacs
(0.8 A to 8 A)
E1
General Description
Teccor's line of sensitive gate triacs includes devices with current capabilities through 8 A. Voltage ranges are available from 200 V to 600 V. This line features devices with guaranteed gate control in Quadrants II and IV as well as control in the commonly used Quadrants I and III. Four-quadrant control devices require sensitive gate triacs. They can be controlled by digital circuitry where positive-only or negative-only pulses must control AC current in both directions through the device. Note that triacs with low IGT values in Quadrants II and IV will have lower dv/dt characteristics. The sensitive gate triac is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. It is used primarily for AC switching and phase control applications such as motor speed controls, temperature modulation controls, and lighting controls. The epoxy TO-92 and TO-220 configurations feature Teccor's electrically-isolated construction where the case or mounting tab is internally isolated from the semiconductor chip and lead attachments. Non-isolated epoxy TO-202 packages are available as well as TO-251 and surface mount TO-252 (D-Pak). Tapeand-reel capability and tube packing also are available. See Packing Options section of this catalog. All Teccor triacs have glass-passivated junctions. This glassing process prevents migration of contaminants and ensures longterm device reliability with parameter stability. Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.
Features
Electrically-isolated packages Glass-passivated junctions ensure long device reliability and parameter stability Voltage capability up to 600 V Surge capability up to 80 A Four-quadrant gating guaranteed
Compak Sensitive Gate Triac

Surface mount package 0.8 A and 1 A series New small profile three-leaded Compak package Packaged in embossed carrier tape with 2,500 devices per reel Can replace SOT-223
http://www.littelfuse.com +1 972-580-7777
2004 Littelfuse, Inc. Thyristor Product Catalog
E1 - 1
Sensitive Triacs
Data Sheets
Part No. IT(RMS)

(11)
MT2
MT2
Isolated
Non-isolated
VDRM
(1)
IGT
(3) (6) (9)
IDRM
(1) (14)
MT2
G MT2
MT1
MT1 G MT2
MT1
MT2
MT1 MT2
MT1
G MT2
MT1
G MT2
mAmps Volts MIN 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 QI 3 3 3 5 5 5 5 5 5 10 10 10 3 3 3 5 5 5 5 5 5 10 10 10 3 3 3 5 5 5 5 5 5 10 10 10 QII QIII MAX 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 QIV 3 3 3 5 5 5 10 10 10 20 20 20 3 3 3 5 5 5 10 10 10 20 20 20 3 3 3 5 5 5 10 10 10 20 20 20
TO-92 MAX L2X8E3 L4X8E3 L6X8E3 L2X8E5 L4X8E5 L6X8E5 L2X8E6 L4X8E6 L6X8E6 L2X8E8 L4X8E8 L6X8E8 L201E3 L401E3 L601E3 L201E5 L401E5 L601E5 L201E6 L401E6 L601E6 L201E8 L401E8 L601E8
Compak
TO-220
TO-252 D-Pak
TO-202
TO-251 V-Pak
0.8 A
See Package Dimensions section for variations. (12) L2X3 L4X3 L6X3 L2X5 L4X5 L6X5
1A
L2N3 L4N3 L6N3 L2N5 L4N5 L6N5
4A
L2004L3 L4004L3 L6004L3 L2004L5 L4004L5 L6004L5 L2004L6 L4004L6 L6004L6 L2004L8 L4004L8 L6004L8
L2004D3 L4004D3 L6004D3 L2004D5 L4004D5 L6004D5 L2004D6 L4004D6 L6004D6 L2004D8 L4004D8 L6004D8
L2004F31 L4004F31 L6004F31 L2004F51 L4004F51 L6004F51 L2004F61 L4004F61 L6004F61 L2004F81 L4004F81 L6004F81
L2004V3 L4004V3 L6004V3 L2004V5 L4004V5 L6004V5 L2004V6 L4004V6 L6004V6 L2004V8 L4004V8 L6004V8
mAmps TC = TC = 25 C 110 C MAX 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.1 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2 0.01 0.2
See General Notes on page E1 - 4 and Electrical Specification Notes on page E1 - 5.
E1 - 2
Data Sheets
Sensitive Triacs
VTM
(1) (4)
VGT
(2) (5) (15)
IH
(1) (7)
IGTM
(13)
PGM
(13)
PG(AV)
ITSM
(8) (10)
dv/dt(c)
(1) (10)
dv/dt
(1)
tgt
(9)
I2 t
di/dt
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
Volts TC = 25 C MAX 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
Amps mAmps MAX 5 5 5 10 10 10 10 10 10 15 15 15 5 5 5 10 10 10 10 10 10 15 15 15 5 5 5 10 10 10 10 10 10 15 15 15 Amps 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 Watts 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 Watts 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 60/50 Hz 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 40/33 40/33 40/33 40/33 40/33 40/33 40/33 40/33 40/33 40/33 40/33 40/33 Volts/Sec TYP 0.5 0.5 0.5 1 1 1 1 1 1 2 2 2 0.5 0.5 0.5 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 1 1 1 1 1 1 2 2 2
Volts/Sec TC = 100 C TYP 20 15 10 20 15 10 30 25 20 35 30 25 20 20 10 20 20 10 30 30 20 35 35 25 25 25 15 25 25 15 30 30 20 35 35 25
Sec TYP 2.8 2.8 2.8 3 3 3 3 3 3 3.2 3.2 3.2 2.8 2.8 2.8 3 3 3 3 3 3 3.2 3.2 3.2 2.8 2.8 2.8 3 3 3 3 3 3 3.2 3.2 3.2
Amps2Sec 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6 6.6
Amps/Sec 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 50 50 50 50 50 50 50 50 50 50 50 50
E1 - 3
Sensitive Triacs
Data Sheets
Part No. IT(RMS)

(11)
MT2
MT2
Isolated
Non-isolated
VDRM
(1)
IGT
(3) (6)
IDRM
(1) (14)
G MT2 MT1
MT1 MT2
MT1
G MT2
TO-220 MAX
TO-252 D-Pak
TO-251 V-Pak
Volts MIN 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600
QI 5 5 5 5 5 5 10 10 10 5 5 5 10 10 10
6A
8A
See Package Dimensions section for variations. (12) L2006L5 L2006D5 L2006V5 L4006L5 L4006D5 L4006V5 L6006L5 L6006D5 L6006V5 L2006L6 L2006D6 L2006V6 L4006L6 L4006D6 L4006V6 L6006L6 L6006D6 L6006V6 L2006L8 L2006D8 L2006V8 L4006L8 L4006D8 L4006V8 L6006L8 L6006D8 L6006V8 L2008L6 L2008D6 L2008V6 L4008L6 L4008D6 L4008V6 L6008L6 L6008D6 L6008V6 L2008L8 L2008D8 L2008V8 L4008L8 L4008D8 L4008V8 L6008L8 L6008D8 L6008V8
mAmps QII QIII MAX 5 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 5 5 5 5 5 5 10 10 10 10 10 10
QIV 5 5 5 10 10 10 20 20 20 10 10 10 20 20 20
mAmps TC = 25 C TC = 110 C MAX 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5 0.02 0.5
Specified Test Conditions

di/dt Maximum rate-of-change of on-state current; IGT = 50 mA with 0.1 s rise time dv/dt Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM Peak off-state current, gate open; VDRM = max rated value IGT DC gate trigger current in specific operating quadrants; VD = 12 V dc; RL = 60 IGTM Peak gate trigger current IH Holding current gate open; initial on-state current = 100 mA dc IT(RMS) RMS on-state current conduction angle of 360 ITSM Peak one-cycle surge PG(AV) Average gate power dissipation PGM Peak gate power dissipation; IGT IGTM tgt Gate controlled turn-on time; IGT = 50 mA with 0.1 s rise time VDRM Repetitive peak off-state/blocking voltage VGT DC gate trigger voltage; VD = 12 V dc; RL = 60 VTM Peak on-state voltage at max rated RMS current
General Notes
All measurements are made with 60 Hz resistive load and at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (TJ) is -65 C to +110 C for TO-92 devices and -40 C to +110 C for all other devices. Storage temperature range (TS) is -65 C to +150 C for TO-92 devices, -40 C to +150 C for TO-202 devices, and -40 C to +125 C for TO-220 devices. Lead solder temperature is a maximum of 230 C for 10 seconds maximum at a minimum of 1/16 (1.59 mm) from case. The case or lead temperature (TC or TL) is measured as shown on dimensional outline drawings. See Package Dimensions section of this catalog.
E1 - 4
Data Sheets
Sensitive Triacs
VTM
(1) (4)
VGT
(2) (5) (15)
IH
(1) (7)
IGTM
(13)
PGM
(13)
PG(AV)
ITSM
(8) (10)
dv/dt(c)
(1) (10)
dv/dt
(1)
tgt
(9)
I2 t
di/dt
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
Volts TC = 25 C MAX 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
mAmps MAX 10 10 10 10 10 10 20 20 20 10 10 10 20 20 20
Amps 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
Watts 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18
Watts 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4
Amps 60/50 Hz 60/50 60/50 60/50 60/50 60/50 60/50 60/50 60/50 60/50 80/65 80/65 80/65 80/65 80/65 80/65
Volts/Sec TYP 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2
Volts/Sec TC = 100 C TYP 40 30 20 40 30 20 45 40 30 40 30 20 45 40 30
Sec TYP 3 3 3 3 3 3 3.2 3.2 3.2 3 3 3 3.2 3.2 3.2
Amps2Sec 15 15 15 15 15 15 15 15 15 26.5 26.5 26.5 26.5 26.5 26.5
Amps/Sec 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70
Electrical Specification Notes

(1) (2) (3) (4) (5) (6) (7) (8) (9) For either polarity of MT2 with reference to MT1 terminal For either polarity of gate voltage VGT with reference to MT1 terminal See Gate Characteristics and Definition of Quadrants. See Figure E1.4 for iT versus vT. See Figure E1.6 for VGT versus TC. See Figure E1.7 for IGT versus TC. See Figure E1.5 for IH versus TC. See Figure E1.9 for surge rating and specific duration. See Figure E1.8 for tgt versus IGT.
Gate Characteristics
Teccor triacs may be turned on between gate and MT1 terminals in the following ways: In-phase signals (with standard AC line) using Quadrants I and III Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses
When maximum surge capability is required, pulses should be a minimum of one magnitude above IGT rating with a steep rising waveform (1 s rise time).
ALL POLARITIES ARE REFERENCED TO MT1 MT2 POSITIVE (Positive Half Cycle)
(10) See Figure E1.2 and Figure E1.3 for maximum allowable case temperature at maximum rated current. (11) See Figure E1.1, Figure E1.2, and Figure E1.3 for TA or TC versus IT(RMS). (12) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (13) Pulse width 10 s (14) TC or TL = TJ for test conditions in off state (15) Minimum non-trigger VGT at 110 C is 0.2 V.
IGT
(-)
MT2 IGT GATE
MT2
(+)
IGT GATE MT1
MT1
(-)
REF MT2 IGT GATE MT1 REF
QII QI QIII QIV

(+)
REF
+
MT2 IGT GATE MT1 REF
IGT
MT2 NEGATIVE (Negative Half Cycle)
Definition of Quadrants
E1 - 5
Sensitive Triacs
Data Sheets
Electrical Isolation
Teccors isolated triac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following isolation table shows standard isolation ratings.
Electrical Isolation from Leads to Mounting Tab

V AC RMS 2500 *UL Recognized File #E71639 TO-220 * Standard
Thermal Resistance (Steady State) Junction to Mounting Tab and Junction to Ambient RJC [RJA] C/W (TYP)
Package Code E C F L F2 D V
Type
TO-92 Plastic 0.8 A 1A 4A 6A 8A 60 [135] 50 [95]
Compak 60 * 40 *
TO-202 Type 1
TO-220 Isolated
TO-202 Type 2
TO-252 D-Pak
TO-251 V-Pak
3.5 [45]
3.6 [50] 3.3 2.8
6.0 [70]
3.5 3.2 2.7
6.0 [70] 3.2 2.7
* Mounted on 1 cm2 copper foil surface; two-ounce copper foil
Maximum Allowable Ambient Temperature (TA) - C
120
Maximum Allowable Case Temperature (TC) C
100
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING NO HEATSINK TO-220 and TYPE 1 and 3 TO-202
110 100 90 80 70
0.8 A
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawings
80
TYPE 2 and 4 TO-202 and TO-251
1A
60
1 A TO-92
40
0.8 A TO-92
60 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
25 20 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RMS On-State Current [IT(RMS)] Amps
RMS On-State Current [IT(RMS)] - Amps
Figure E1.1 Maximum Allowable Ambient Temperature versus On-state Current
Figure E1.2 Maximum Allowable Case Temperature versus On-state Current (0.8 A and 1 A)
E1 - 6
Data Sheets
Sensitive Triacs
Maximum Allowable Case Temperature (TC) - C
110 105 100 95 90 85 80 75 70 65 60 0 1 2 3 4 5 6 7 8

4 A TYPE 2 and 4 TO-202 4 A TO-251 4 A TYPE 1 and 3 TO-202 4 A TO-220 (Isolated) 4 A TO-252
2.0
6A
TO TO -25 8A 1a -22 nd TO 0( TO -22 Iso -25 0( 2 lat Iso ed late ) d)
8A
VGT (TC = 25 C)
1.5
VGT
1.0
6 A TO-251 6 A TO-252
Ratio of
.5
0 -65 -40 -15 +25 +65 +110 +125
RMS On-State Current [IT(RMS)] - Amps
Case Temperature (TC) - C
Figure E1.3 Maximum Allowable Case Temperature versus On-state Current (4 A, 6 A, and 8 A)
Figure E1.6 Normalized DC Gate Trigger Voltage for All Quadrants versus Case Temperature
20 18 TC = 25 C
4.0
Positive or Negative Instantaneous On-state Current (iT) - Amps
16 14 12 10 8 6 4 2 0 0 0.5 0.8 1.0 1.2 1.4 1.6 1.8 0.8 A 4A 1A 6 A and 8 A
IGT (T = 25 C) C
3.0
IGT
2.0
Ratio of
1.0
0 -65 -40 -15 +25 +65 +110 +125
Positive or Negative Instantaneous On-state Voltage (vT) - Volts
Figure E1.4 On-state Current versus On-state Voltage (Typical)
Figure E1.7 Normalized DC Gate Trigger Current for All Quadrants versus Case Temperature
7.0
4.0
TC = 25 C
6.0
IH (TC = 25 C)
3.0
Turn-On Time (tgt) - Sec
INITIAL ON-STATE CURRENT = 100 mA (DC) 0.8 - 4 A Devices = 200 mA (DC) 6 - 8 A Devices
IGT = 5 mA MAX
5.0 IGT = 10 mA MAX
IH
4.0
2.0
IGT = 20 mA MAX
Ratio of
3.0
IGT = 3 mA MAX
1.0
2.0
1.0
0 -65 -40 -15 +25 +65 +110 +125

0 1 2 3 4 5 6 8 10 20 30 40 60 80 100
DC Gate Trigger Current (IGT) - mA
Figure E1.5 Normalized DC Holding Current versus Case Temperature
Figure E1.8 Turn-on Time versus Gate Trigger Current (Typical)
E1 - 7
Sensitive Triacs
Data Sheets
200 150 100 80 60 40 30 20 10 8 6 4 3 2 1 1 2 3 4 6 8 10 20 30 40 60 100 200 400 600 1000

8A 6A
4A
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-state Current: [IT(RMS)]: Maximum Rated Value at Specified Case Temperature
Peak Surge (Non-Repetitive) On-State Current (ITSM) Amps
NOTES: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
1A
0.8 A
Surge Current Duration Full Cycles

Figure E1.9 Peak Surge Current versus Surge Current Duration
9.0 8.0 7.0 6.0

6 A and 8 A
Average On-state Power Dissipation [PD(AV)] Watts
1.5
1.0
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360
5.0 4.0 3.0 2.0 1.0

4A
0.8 A 0.5 1A
0 0 0.25 0.50 0.75 1.0 1.25 1.5
0 0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
RMS On-state Current [IT(RMS)] Amps
Figure E1.10 Power Dissipation (Typical) versus RMS On-state Current (0.8 A and 1 A)
Figure E1.11 Power Dissipation (Typical) versus RMS On-state Current (4 A, 6 A, and 8 A)
E1 - 8
Se
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G O 1639 EC #E7 R
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Fi le
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Z NI
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E2
TO-92 TO-202 *TO-220
3-lead Compak
TO-263 D2Pak
TO-252 D-Pak TO-251 V-Pak
*TO-3 Fastpak
MT2
MT1
Triacs
(0.8 A to 35 A)
E2
General Description
These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V. The triac may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT1. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. This feature facilitates the use of low-cost assembly and convenient packaging techniques. Tape-and-reel capability is available. See Packing Options section of this catalog. All Teccor triacs have glass-passivated junctions to ensure longterm device reliability and parameter stability. Teccor's glasspassivated junctions offer a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.
Features
Electrically-isolated packages Glass-passivated junctions Voltage capability up to 1000 V Surge capability up to 200 A
Compak Package
Surface mount package 0.8 A and 1 A series New small profile three-leaded Compak package Packaged in embossed carrier tape with 2,500 devices per reel Can replace SOT-223
E2 - 1
Triacs
Data Sheets
Part Number IT(RMS)

(4)
MT2
Isolated
Non-isolated
MT2
VDRM
(1)
IGT
(3) (7) (15)
MT2
G
MT2 G MT2
MT2
G MT2 MT1
MT1
MT1 G
MT2
MT2
MT1
MT1 MT2
MT1
G MT2
MT1
G MT2
MT1
G MT2
Volts TO-92 MAX TO-220 Compak Q2X3 Q4X3 Q6X3 Q2X4 Q4X4 Q6X4 Q2N3 Q4N3 Q6N3 Q2N4 Q4N4 Q6N4 Q2004L3 Q4004L3 Q6004L3 Q2004L4 Q4004L4 Q6004L4 Q8004L4 QK004L4 Q2004F31 Q4004F31 Q6004F31 Q2004F41 Q4004F41 Q6004F41 Q2004D3 Q4004D3 Q6004D3 Q2004D4 Q4004D4 Q6004D4 Q8004D4 QK004D4 Q2006F41 Q4006F41 Q6006F51 Q2006R4 Q4006R4 Q6006R5 Q8006R5 QK006R5 Q2008F41 Q4008F41 Q6008F51 Q2008R4 Q4008R4 Q6008R5 Q8008R5 QK008R5 Q2004V3 Q4004V3 Q6004V3 Q2004V4 Q4004V4 Q6004V4 Q8004V4 QK004V4 Q2006N4 Q4006N4 Q6006N5 Q8006N5 QK006N5 Q2008N4 Q4008N4 Q6008N5 Q8008N5 QK008N5 TO-202 TO-220 TO-252 D-Pak TO-251 V-Pak TO-263 D2Pak MIN 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 10 10 10 25 25 25 10 10 10 25 25 25 10 10 10 25 25 25 25 25 25 25 50 50 50 25 25 50 50 50 QI QII 10 10 10 25 25 25 10 10 10 25 25 25 10 10 10 25 25 25 25 25 25 25 50 50 50 25 25 50 50 50
mAmps QIII QIV 10 10 10 25 25 25 10 10 10 25 25 25 10 10 10 25 25 25 25 25 25 25 50 50 50 25 25 50 50 50 QIV TYP 25 25 25 50 50 50 25 25 25 50 50 50 25 25 25 50 50 50 50 50 50 50 75 75 75 50 50 75 75 75
See Package Dimensions section for variations. (11) Q2X8E3 Q4X8E3 Q6X8E3 Q2X8E4 Q4X8E4 Q6X8E4
MAX
0.8 A
1A
Q201E3 Q401E3 Q601E3 Q201E4 Q401E4 Q601E4
4A
6A
Q2006L4 Q4006L4 Q6006L5 Q8006L5 QK006L5
8A
Q2008L4 Q4008L4 Q6008L5 Q8008L5 QK008L5
E2 - 2
Data Sheets
Triacs
IDRM
(1) (16)
VTM
(1) (5)
VGT
(2) (6) (15) (18) (19)
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10)
I2 t
di/dt
mAmps TC = TC = TC = 25 C 100 C 125 C MAX 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
Volts TC = 25 C MAX 2 2 2 2.5 2.5 2.5 2 2 2 2.5 2.5 2.5 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 mAmps MAX 15 15 15 25 25 25 15 15 15 25 25 25 20 20 20 30 30 30 30 30 50 50 50 50 50 50 50 50 50 50 1 1 1 1 1 1 1 1 1 1 1 1 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 10 10 10 10 10 10 10 10 10 10 10 10 15 15 15 15 15 15 15 15 18 18 18 18 18 20 20 20 20 20 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Amps Watts Watts
Amps 60/50 Hz 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 10/8.3 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 20/16.7 55/46 55/46 55/46 55/46 55/46 55/46 55/46 55/46 80/65 80/65 80/65 80/65 80/65 100/83 100/83 100/83 100/83 100/83 Volts/Sec TYP 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 4 4 4 4 4 4 4 4 4 4
Volts/Sec TC= TC= 100 C 125 C MIN 40 35 25 50 45 35 40 40 30 50 50 40 50 50 40 100 100 75 60 50 200 200 150 125 100 250 250 220 150 100 150 150 125 100 120 120 100 85 30 25 15 40 35 25 30 30 20 40 40 30 40 40 30 75 75 50 40 Sec TYP 2.5 2.5 2.5 3 3 3 2.5 2.5 2.5 3 3 3 2.5 2.5 2.5 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 0.41 0.41 0.41 0.41 0.41 0.41 1.6 1.6 1.6 1.6 1.6 1.6 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 26.5 26.5 26.5 26.5 26.5 41 41 41 41 41 20 20 20 20 20 20 30 30 30 30 30 30 50 50 50 50 50 50 50 50 70 70 70 70 70 70 70 70 70 70 Amp2Sec Amps/Sec
E2 - 3
Triacs
Data Sheets
Part Number IT(RMS)

(4) (16)
MT1
Isolated
MT2
MT2
Non-isolated
MT2
VDRM
(1)
MT2
IGT
(3) (7) (15)
IDRM
(1) (16)
G MT2 MT1
Gate
MT1 MT2
MT1
G MT2
MT1
G MT2
mAmps TO-263 D2Pak Q2010N4 Q4010N4 Q6010N4 Q8010N4 QK010N4 Q2010N5 Q4010N5 Q6010N5 Q8010N5 QK010N5 Q2015N5 Q4015N5 Q6015N5 Q8015N5 QK015N5 Q2025N5 Q4025N5 Q6025N5 Q8025N5 QK025N5 Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 600 800 600 800 25 25 25 25 25 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 QI QII 25 25 25 25 25 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 QIII 25 25 25 25 25 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 120 120 120 120 QIV 50 50 50 50 50 75 75 75 75 75 QIV TYP 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 TC = 25 C
mAmps TC = TC = 100 C 125 C MAX 1 1 1 1 3 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 1 3 1 1 1 1 3 5 5 5 5 3 3 3 3 2 2 2 3 2 2 2 2
TO-3 Fastpak MAX
TO-220 Q2010L4 Q4010L4 Q6010L4 Q8010L4
TO-202
TO-220 Q2010R4 Q4010R4 Q6010R4 Q8010R4 QK010R4
See Package Dimensions section for variations. (11)
MAX
10 A
QK010L4 Q2010L5 Q4010L5 Q6010L5 Q8010L5 QK010L5 Q2015L5 Q4015L5 Q6015L5 Q8015L5 QK015L5 Q2010F51 Q4010F51 Q6010F51
Q2010R5 Q4010R5 Q6010R5 Q8010R5 QK010R5 Q2015R5 Q4015R5 Q6015R5 Q8015R5 QK015R5 Q2025R5 Q4025R5 Q6025R5
15 A
25 A
Q6025P5 Q8025P5
Q8025R5 QK025R5
35 A
Q6035P5 Q8035P5
Specific Test Conditions

di/dt Maximum rate-of-change of on-state current; IGT = 200 mA with 0.1 s rise time dv/dt Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM Peak off-state current, gate open; VDRM = maximum rated value IGT DC gate trigger current in specific operating quadrants; VD = 12 V dc IGTM Peak gate trigger current IH Holding current (DC); gate open IT(RMS) RMS on-state current conduction angle of 360 ITSM Peak one-cycle surge PG(AV) Average gate power dissipation PGM Peak gate power dissipation; IGT IGTM tgt Gate controlled turn-on time; IGT = 200 mA with 0.1 s rise time
VDRM Repetitive peak blocking voltage VGT DC gate trigger voltage; VD = 12 V dc; RL = 60 VTM Peak on-state voltage at maximum rated RMS current
General Notes
All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless specified otherwise. Operating temperature range (TJ) is -65 C to +125 C for TO-92, -25 C to +125 C for Fastpak, and -40 C to +125 C for all other devices. Storage temperature range (TS) is -65 C to +150 C for TO-92, -40 C to +150 C for TO-202, and -40 C to +125 C for all other devices. Lead solder temperature is a maximum of 230 C for 10 seconds, maximum; 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown on the dimensional outline drawings. See Package Dimensions section of this catalog.
E2 - 4
Data Sheets
Triacs
VTM
(1) (5)
VGT
(2) (6) (15) (18) (19)
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10) (17)
I2 t
di/dt
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 1.4 1.4 1.5 1.5
Volts TC = 25 C MAX 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.75 2.75 2.75 2.75 mAmps MAX 35 35 35 35 35 50 50 50 50 50 70 70 70 70 70 100 100 100 100 100 50 50 50 50 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 2 2 2 2 2 2 2 2 2 2 2 2 2 2 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Amps Watts Watts
Amps 60/50 Hz 120/100 120/100 120/100 120/100 120/100 120/100 120/100 120/100 120/100 120/100 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 250/220 250/220 350/300 350/300 Volts/Sec TYP 2 2 2 2 2 4 4 4 4 4 4 4 4 4 4 5 5 5 5 5 5 5 5 5
Volts/Sec TC = 100 C 150 150 100 75 50 350 350 300 250 150 400 400 350 300 200 400 400 350 300 200 550 450 550 450 475 400 475 400 275 275 225 200 275 275 225 200 225 225 200 175 TC = 125 C Sec TYP 3 3 3 3 3 3 3 3 3 3 4 4 4 4 4 4 4 4 4 4 3 3 3 3 60 60 60 60 60 60 60 60 60 60 166 166 166 166 166 166 166 166 166 166 260 260 508 508 70 70 70 70 70 70 70 70 70 70 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Amps2Sec Amps/Sec
MIN

(1) (2) (3) (4) (5) (6) (7) (8) (9) For either polarity of MT2 with reference to MT1 terminal For either polarity of gate voltage (VGT) with reference to MT1 terminal See Gate Characteristics and Definition of Quadrants. See Figure E2.1 through Figure E2.7 for current rating at specific operating temperature. See Figure E2.8 through Figure E2.10 for iT versus vT. See Figure E2.12 for VGT versus TC. See Figure E2.11 for IGT versus TC. See Figure E2.14 for IH versus TC. See Figure E2.13 for surge rating with specific durations.
(15) RL = 60 for 0.8 A to10 A triacs; RL = 30 for 15 A to 35 A triacs (16) TC = TJ for test conditions in off state (17) IGT = 300 mA for 25 A and 35 A devices (18) Quadrants I, II, III only (19) Minimum non-trigger VGT at 125 C is 0.2 V for all except 50 mA MAX QIV devices which are 0.2 V at 110 C.
Teccor triacs may be turned on between gate and MT1 terminals in the following ways: In-phase signals (with standard AC line) using Quadrants I and III Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If positive pulses are required, see Sensitive Triacs section of this catalog or contact the factory. Also, see Figure AN1002.8, Amplified Gate Thyristor Circuit.
(10) See Figure E2.15 for tgt versus IGT. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices, 400 mA dc for 15 A to 35 A devices (13) See Figure E2.1 through Figure E2.6 for maximum allowable case temperature at maximum rated current. (14) Pulse width 10 s; IGT IGTM 2004 Littelfuse, Inc. Thyristor Product Catalog E2 - 5
Triacs
Data Sheets
In all cases, if maximum surge capability is required, pulses should be a minimum of one magnitude above IGT rating with a steep rising waveform (1 s rise time).
Teccors isolated triac packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab or base, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.
Electrical Isolation from Leads to Mounting Tab *
MT2
(-)
MT2
IGT GATE MT1
(+)
IGT GATE MT1
V AC RMS 2500
TO-220 Isolated Standard Optional **
Fastpak Isolated Standard N/A
IGT
(-)
REF MT2 IGT GATE MT1 REF
QII QI QIII QIV

(+)
REF
+
MT2 IGT GATE MT1 REF
IGT
4000
* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.
MT2 NEGATIVE (Negative Half Cycle)
Thermal Resistance (Steady State) R JC [R JA] (TYP.) C/W

Package Code P E C F F2 L R D V N
Type
TO-3 Fastpak 0.8 A 1A 4A 6A 8A 10 A 15 A 25 A 35 A 1.6 1.5
TO-92 60 [135] 50 [95]
Compak 60 * 40 *
TO-202 Type 1
TO-202 Type 2
TO-220 Isolated
TO-220 Non-isolated
TO-252 D-Pak
TO-251 V-Pak
TO-263 D2Pak
3.5 [45] 3.8 3.3 3.5
6 [70]
3.6 [50] 3.3 2.8 2.6 2.1 1.8 [45] 1.5 1.3 1.1 0.89
3.5
6.0 [70] 1.8 1.5 1.3 1.1 0.89
* Mounted on 1
cm2
copper foil surface; two-ounce copper foil
E2 - 6
Data Sheets
Triacs
130 120 110 100 90 80 70 60 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
130 120 110 100 90 80 70 60 0 0 2 4 6 8 10 12 14 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 10 A TO-202 10 A TO-220 (Non-isolated) 10 A D2Pak
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing
1A 0.8 A
RMS On-state Current [lT(RMS)] AMPS
RMS On-state Current [lT(RMS)] Amps
Figure E2.1 Maximum Allowable Case Temperature versus On-state Current (0.8 A and 1 A)
Figure E2.4 Maximum Allowable Case Temperature versus On-state Current (10 A)
130 120 110 100 90 80 70 60 0 0 1 2 3 4 A TO-202 (TYPE 2 and 4) 4 A TO-251 4 A TO-220 (Isolated) 4 A TO-202 (Type 1 and 3) 4 A TO-252 6 A TO-220 (Non-isolated) 6 A D2Pak 6 A TO-220 (Isolated) 6 A TO-202
130 120 110 100
15 A TO-220 (Non-isolated) 15 A D2Pak
15 A TO-220 (Isolated)
90 80 70 60 0 0 5 10 15 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing
Figure E2.2 Maximum Allowable Case Temperature versus On-state Current (4 A and 6 A)
130
130 10 A TO-220 (Isolated) 120 110 100 90 80 70 60 0 0 2 4 6 8 10 12 14 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 8 A TO-202 8 A TO-220 (Isolated) 8 A TO-220 (Non-isolated) 8 A D2Pak
120
110 25 A TO-220 (Non-isolated) 25 A D2Pak
100
90 25 A TO-3 Fastpak 35 A TO-3 Fastpak
80
70
60
50 0 10 20 30 40 50
E2 - 7
Triacs
Data Sheets
Maximum Allowable Ambient Temperature (TA) C
90
120
Positive or Negative Instantaneous On-state Current (iT) Amps
100
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING NO HEATSINK
80 70 60 50 40 30 20 15 A and 25 A 10 0
TC = 25 C
80
TO-202 (TYPE 2 and 4) TO-251 TO-220 Devices and TO-202 (Type 1 and 3)
25 A and 35 A Fastpak
60
1 A TO-92 40 0.8 A TO-92 25 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RMS On-state Current [IT (RMS)] Amps
Positive or Negative Instantaneous On-state Voltage (vT) Volts

10
Figure E2.10 On-state Current versus On-state Voltage (Typical) (15 A and 25 A)
4.0
9
TC = 25 C
8 7 6 5 4 3 2
0.8 A
IGT(TC = 25 C)
3.0
IGT
2.0
Ratio of
1.0
1A
1 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-65
-40
-15
+25
+65
+125
Case Temperature (TC) C
Figure E2.8 On-state Current versus On-state Voltage (Typical) (0.8 A and 1 A)
20 18 16
Figure E2.11 Normalized DC Gate Trigger Current for All Quadrants versus Case Temperature
2.0
TC = 25 C
14 12 10 8 6 4 2 0 0 0.6 0.8
6-10 A
4A
VGT(TC = 25 C)
1.5
VGT
1.0
Ratio of
.5
0
1.0 1.2 1.4 1.6 1.8
-65
-40
-15
+25
+65
+125
Figure E2.9 On-state Current versus On-state Voltage (Typical) (4 A, 6 A, 8 A, and 10 A)
Figure E2.12 Normalized DC Gate Trigger Voltage for All Quadrants versus Case Temperature
E2 - 8
Data Sheets
Triacs
1000
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [lT(RMS)]: Maximum Rated Value at Specified Case Temperature
) Amps
400 300 200 120 100 80 60 50 40 30 20 10
NOTES:
Peak Surge (Non-repetitive) On-state Current (l
TSM
1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
35 A Fast pak 25 A Fast pak 25 A T 15 A 10 A
O-22
8A 6A
4A
1A 0.8 A
1 1 10 100 1000

4.0
8
INITIAL ON-STATE CURRENT = 200 mA DC 0.8 A - 10 A Devices = 400 mA DC 15 A - 25 A Devices
Devices with lGT = 10 mA
Typical Turn-on Time (tgt) Sec
7 6 5 4 3 2 1 0
3.0
TC = 25 C
IH(TC = 25 C)
IH
2.0
Ratio of
1.0
-65
-40
-15
+25
+65
+125
25
50
75
100 125 150 175 200 225 250 275 300
DC Gate Trigger Current (lGT) mA
E2 - 9
Triacs
Data Sheets
4.0
1.5
3.0
1.0
0.8 A 1A
0.5
2.0
4A 1.0
0 0 0.25 0.50 0.75 1.0 1.25

0 0 1.0 2.0 3.0 4.0
Figure E2.16 Power Dissipation (Typical) versus On-state Current (0.8 A and 1 A)
Figure E2.19 Power Dissipation (Typical) versus RMS On-state Current (4 A)
18 16 14 12
6-10 A 15 A
10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Figure E2.17 Power Dissipation (Typical) versus On-state Current (6 A to 10 A and 15 A)

45 40 35 30
25 A
25 20
25 A - 35 A Fastpaks
15 10 5 0 0 8 16 24 32 40
Figure E2.18 Power Dissipation (Typical) versus On-state Current (25 A to 35 A)
E2 - 10
U.
R L.
EC
Fi
IZ GN
71 63
ED
le
#E
E3
TO-220
MT2
MT1
Quadrac
Internally Triggered Triacs (4 A to 15 A)
E3
General Description
Teccors Quadrac devices are triacs that include a diac trigger mounted inside the same package. This device, developed by Teccor, saves the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network. The Quadrac device is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. Its primary purpose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required. Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the TO-220 package. The TO-220 package is electrically isolated to 2500 V rms from the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus eliminating the need for separate insulators and insulator-mounting steps and saving dollars over hot tab devices. All Teccor triac and diac chips have glass-passivated junctions to ensure long-term device reliability and parameter stability. Variations of devices in this data sheet are available for custom design applications. Consult the factory for more information.
Features
Glass-passivated junctions Electrically-isolated package Internal trigger diac High surge capability up to 200 A High voltage capability 200 V to 600 V
E3 - 1
Quadrac
Data Sheets
Part No. IT(RMS)

(5) Isolated
Trigger Diac Specifications (TMT1) VDRM

(1)
IDRM
(1) (10)
VTM
(1) (3)
VBO (7)
VBO (6)
[V ] (6)
IBO
CT (11)
MT1
T MT2
mAmps Volts MIN 200 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 TC = 25 C TC = 100 C MAX 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 TC = 125 C
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 Volts MAX 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Volts MIN 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 MAX 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 Volts MIN 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Amps MAX 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 Farads MAX 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
TO-220 See Package Dimensions section for variations. (12)
4A
Q2004LT Q4004LT Q6004LT Q2006LT Q4006LT
6A
Q6006LT Q4006LTH Q6006LTH Q2008LT Q4008LT
8A
10 A
15 A
Q6015LT Q4015LTH Q6015LTH

[V] Dynamic breakback voltage (forward and reverse) VBO Breakover voltage symmetry CT Trigger firing capacitance di/dt Maximum rate-of-change of on-state current dv/dt Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IBO Peak breakover current IDRM Peak off-state current gate open; VDRM = maximum rated value IGTM Peak gate trigger current (10 s Max) IH Holding current; gate open IT(RMS) RMS on-state current, conduction angle of 360 ITSM Peak one-cycle surge tgt Gate controlled turn-on time VBO Breakover voltage (forward and reverse)
VDRM Repetitive peak blocking voltage VTM Peak on-state voltage at maximum rated RMS current
General Notes
All measurements are made at 60 Hz with resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (TJ) is -40 C to +125 C. Storage temperature range (TS) is -40 C to +125 C. Lead solder temperature is a maximum of +230 C for 10 seconds maximum; 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown on dimensional outline drawings. See Package Dimensions section of this catalog.

(1) (2) (3) (4) For either polarity of MT2 with reference to MT1 See Figure E3.1 for IH versus TC. See Figure E3.4 and Figure E3.5 for iT versus vT. See Figure E3.9 for surge ratings with specific durations.
E3 - 2
Data Sheets
Quadrac
IH
(1) (2)
ITSM
(4) (8)
dv/dt(c)
(1) (5) (8)
dv/dt
(1)
tgt
(6) (9)
I2 t
IGTM
di/dt
(9)
Volts/Sec mAmps MAX 40 40 40 50 50 50 50 50 60 60 60 60 60 60 60 60 60 60 70 70 70 70 70 Amps 60/50Hz 55/46 55/46 55/46 80/65 80/65 80/65 80/65 80/65 100/83 100/83 100/83 100/83 100/83 120/100 120/100 120/100 120/100 120/100 200/167 200/167 200/167 200/167 200/167 Volts/Sec MIN 3 3 3 4 4 4 25 25 4 4 4 25 25 4 4 4 30 30 4 4 4 30 30 75 75 50 150 150 125 575 425 175 175 150 575 425 200 200 175 925 775 300 300 200 925 775 TC = TC = 100 C 125 C MIN 50 50 50 100 100 85 450 350 120 120 100 450 350 150 150 120 700 600 200 200 150 700 600 Sec TYP 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 12.5 12.5 12.5 26.5 26.5 26.5 26.5 26.5 41 41 41 41 41 60 60 60 60 60 166 166 166 166 166 1.2 1.2 1.2 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 50 50 50 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 100 100 100 100 100 Amps2Sec Amps Amps/Sec
See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at specific operating temperature. (6) See Figure E3.2 and Figure E3.3 for test circuit. (7) VBO = [+ VBO] - [- VBO] (8) See Figure E3.7 and Figure E3.8 for maximum allowable case temperature at maximum rated current. (9) Trigger firing capacitance = 0.1 F with 0.1 s rise time (10) TC = TJ for test conditions in off state (11) Maximum required value to ensure sufficient gate current (12) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number.
(5)
All Teccor isolated Quadrac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.
Electrical Isolation from Leads to Mounting Tab *
V AC RMS 2500 4000 TYPE Standard Optional **
* UL Recognized File #E71639 **For 4000 V isolation, use V suffix in part number.
Thermal Resistance (Steady State) RJC [RJA] C/W (TYP)

TYPE 4A 6A 8A 10 A 15 A Isolated TO-220 3.6 [50] 3.3 2.8 2.6 2.1
E3 - 3
Quadrac
Data Sheets
20
18
2.0 INITIAL ON-STATE CURRENT = 200 mA DC 4 A to 10 A = 400 mA DC 15 A
TC = 25 C
16 14
IH(TC = 25 C)
1.5
6 A, 8 A, and 10 A
12 10 8 6 4
IH
1.0
Ratio of
.5
4A
2 0
0 -40 -15 +25 +65 +105 +125
0.6
0.8
1.0
1.2
1.4
1.6
Figure E3.4 On-state Current versus On-state Voltage (Typical) (4 A to 10 A)
90 80
RL
TC = 25C
70 60 50
D.U.T.
MT2
15 A
40 30 20 10 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
120 V 60 Hz T
VC CT = 0.1 F
MT1
Figure E3.2 Test Circuit
Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)
120
VC +VBO V+
100
4A
80
60
40
V-VBO
25 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure E3.3 Test Circuit Waveforms
E3 - 4
Data Sheets
Quadrac
120
110
130
4.0
3.0 4A
100
4A
90
2.0
80
70
1.0
60 0

0 0 1.0 2.0 3.0 4.0 5.0
.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
18
120
110
130
16
14
12
100 6A
15 A
10
15 A 6 A to 10 A
90
80
8A
10 A
70
60
0 0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0

0 2 4 6 8 10 12 14 16
Figure E3.8 Maximum Allowable Case Temperature versus On-state Current (6 A to 15 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current (6 A to 10 A and 15 A)
200 120 100 80 60 50 40 30 20
Percentage of VBO Change %
Peak Surge (Non-repetitive) On-state Current (ITSM) Amps
NOTES: 1) Gates control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady state rated value.
+4 +2 0 -2 -4 -6 -8 -40 -20 0 +20 +40 +60 +80 +100 +120 +140
15 A 10 A
10 8 6 5 4 3 2
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [IT(RMS)]: Maximum Rated Value at Specified Case Temperature
8A 6A
4A
1 1 2 3 4 5 6 8 10 20 3040 60 80 100 200 300 600 1000
Junction Temperature (TJ) C

Figure E3.12 Normalized diac VBO versus Junction Temperature
E3 - 5
Notes
Se
le
ct
U.
L.
G O 1639 EC #E7 R
ed
Fi le
c Pa
ka
ge
Z NI
ED
E4
*TO-220 *TO-218X
*TO-218
TO-252 D-Pak TO-263 D 2 Pak TO-251 V-Pak

MT2 MT1
Alternistor Triacs
(6 A to 40 A)
E4
General Description
Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III. This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device. All alternistors have glass-passivated junctions to ensure longterm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination. Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.
Features
High surge current capability Glass-passivated junctions 2500 V ac isolation for L, J, and K Packages High commutating dv/dt High static dv/dt
E4 - 1
Alternistor Triacs
Data Sheets
Part Number IT(RMS)

(4)(16)
MT2
Isolated
MT2
Non-isolated
VDRM
(1)
IGT
(3) (7) (15) (17)
IDRM
(1) (18)
MT2
G MT2 MT1
MT1 MT2
MT1
G MT2
MT1
G MT2
mAmps TO-252 D-Pak Q2006DH3 Q4006DH3 Q6006DH3 Q8006DH3 QK006DH3 Q2006DH4 Q4006DH4 Q6006DH4 Q8006DH4 QK006DH4 Q2006NH4 Q4006NH4 Q6006NH4 Q8006NH4 QK006NH4 TO-263 D2Pak Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 Q2008NH4 Q4008NH4 Q6008NH4 Q8008NH4 QK008NH4 Q2010NH5 Q4010NH5 Q6010NH5 Q8010NH5 QK010NH5 Q2012NH5 Q4012NH5 Q6012NH5 Q8012NH5 QK012NH5 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 QI QII MAX 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 QIII TC = 25 C
mAmps TC = 100 C MAX 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 TC = 125 C
T0-220 MAX
TO-220
TO-251 V-Pak Q2006VH3 Q4006VH3 Q6006VH3 Q8006VH3 QK006VH3 Q2006VH4
6A
Q4006VH4 Q6006VH4 Q8006VH4 QK006VH4 Q2006LH4 Q4006LH4 Q6006LH4 Q8006LH4 QK006LH4 Q2006RH4 Q4006RH4 Q6006RH4 Q8006RH4 QK006RH4 Q2008VH3 Q4008VH3 Q6008VH3 Q8008VH3 QK008VH3 Q2008VH4
Q2008DH3 Q4008DH3 Q6008DH3 Q8008DH3 QK008DH3 Q2008DH4 Q4008DH4 Q6008DH4 Q8008DH4 QK008DH4
8A
Q4008VH4 Q6008VH4 Q8008VH4 QK008VH4 Q2008LH4 Q4008LH4 Q6008LH4 Q8008LH4 QK008LH4 Q2010LH5 Q4010LH5 Q6010LH5 Q8010LH5 QK010LH5 Q2012LH5 Q4012LH5 Q6012LH5 Q8012LH5 QK012LH5 Q2008RH4 Q4008RH4 Q6008RH4 Q8008RH4 QK008RH4 Q2010RH5 Q4010RH5 Q6010RH5 Q8010RH5 QK010RH5 Q2012RH5 Q4012RH5 Q6012RH5 Q8012RH5 QK012RH5
10 A
12 A
See General Notes and Electrical Specification Notes on page E4 - 5.
E4 - 2
Data Sheets
Alternistor Triacs
VGT
(2) (6) (15) (17) (20)
VTM
(1) (5)
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10)
I2 t
di/dt
(19)
Volts TC = 25 C MAX 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 Volts MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 mAmps MAX 15 15 15 15 15 35 35 35 35 35 35 35 35 35 35 15 15 15 15 15 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Amps Watts Watts
Amps 60/50 Hz 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 100/83 100/83 100/83 100/83 100/83 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 Volts/Sec MIN 20 20 20 20 20 25 25 25 25 25 25 25 25 25 25 20 20 20 20 20 25 25 25 25 25 25 25 25 25 25 30 30 30 30 30 30 30 30 30 30
Volts/Sec TC = 100 C TC = 125 C MIN 100 100 75 50 40 500 500 400 300 150 750 575 425 300 150 100 100 75 50 40 750 575 425 300 150 500 500 400 300 150 1150 1000 850 650 300 1150 1000 850 650 300 1000 750 650 500 1000 750 650 500 400 400 300 200 400 450 350 250 75 75 50 40 600 450 350 250 400 400 300 200 75 75 50 40 Sec TYP 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 41 41 41 41 41 60 60 60 60 60 60 60 60 60 60 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 Amps2Sec Amps/Sec
E4 - 3
Alternistor Triacs
Data Sheets
Part Number IT(RMS)

(4)(16)
MT2
Isolated
Non-isolated
VDRM
(1)
IGT
(3) (7) (15) (17)
MT2
G MT2 MT1
MT1 MT2
G MT1 MT2
G MT1 MT2
MT1 G MT2
mAmps TO-263 D2Pak Q2016NH3 Q4016NH3 Q6016NH3 Q8016NH3 QK016NH3 Q2016NH4 Q4016NH4 Q6016NH4 Q8016NH4 QK016NH4 Q2016NH6 Q4016NH6 Q6016NH6 Q8016NH6 QK016NH6 Q2025NH6 Q4025NH6 Q6025NH6 Q8025NH6 QK025NH6 Volts 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 QI 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 QII MAX 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 QIII
T0-220 MAX Q2016LH3 Q4016LH3 Q6016LH3 Q8016LH3 QK016LH3 Q2016LH4 Q4016LH4
TO-218 (16)
TO-218X
TO-220 Q2016RH3 Q4016RH3 Q6016RH3 Q8016RH3 QK016RH3 Q2016RH4 Q4016RH4 Q6016RH4 Q8016RH4 QK016RH4 Q2016RH6 Q4016RH6 Q6016RH6 Q8016RH6 QK016RH6
16 A
Q6016LH4 Q8016LH4 QK016LH4 Q2016LH6 Q4016LH6 Q6016LH6 Q8016LH6 QK016LH6 Q2025L6 Q2025K6 Q4025K6 Q6025K6 Q8025K6 QK025K6 Q2025J6 Q4025J6 Q6025J6 Q8025J6 Q4025L6 Q6025L6 Q8025L6 QK025L6 Q2030LH5
Q2025R6 Q4025R6 Q6025R6 Q8025R6 QK025R6
25 A
30 A
Q4030LH5 Q6030LH5 Q2035RH5 Q2035NH5 Q4035NH5 Q6035NH5
200 400 600 200 400 600 800 1000
35 A
Q2040K7 Q4040K7 Q2040J7 Q4040J7 Q6040J7 Q8040J7
Q4035RH5 Q6035RH5
40 A
Q6040K7 Q8040K7 QK040K7
Test Conditions
di/dt Maximum rate-of-change of on-state current dv/dt Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM Peak off-state current gate open; VDRM = maximum rated value IGT DC gate trigger current in specific operating quadrants; VD = 12 V dc IGTM Peak gate trigger current
IH Holding current (DC); gate open IT(RMS) RMS on-state current conduction angle of 360 ITSM Peak one-cycle surge PG(AV) Average gate power dissipation PGM Peak gate power dissipation; IGT IGTM tgt Gate controlled turn-on time; IGT = 300 mA with 0.1 s rise time VDRM Repetitive peak blocking voltage VGT DC gate trigger voltage; VD = 12 V dc VTM Peak on-state voltage at maximum rated RMS current
E4 - 4
Data Sheets
Alternistor Triacs
IDRM
(1) (18)
VGT
VTM
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10)
I2 t
di/dt
(19)
(2) (6) (1) (5) (15) (17) (20)
mAmps TC = 25 C 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.2 0.2 0.2 0.2 0.2 TC = TC = 100 C 125 C MAX 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 0.5 0.5 0.5 2 2 2 2 5 2 2 2 2 2 2 5 5 5 5 2 2 2 3 2 2 2 3 2 2 2 3 2 2 2 3
Volts TC = 25 C MAX 1.5 1.5 1.5 1.5 1.5 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5
Volts TC = 25 C mAmps MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 1.4 1.4 1.4 1.5 1.5 1.5 1.8 1.8 1.8 1.8 1.8 MAX 35 35 35 35 35 50 50 50 50 50 70 70 70 70 70 100 100 100 100 100 75 75 75 75 75 75 120 120 120 120 120 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 4 4 4 4 4 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 40 40 40 40 40 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0.8 0.8 Amps Watts Watts
Amps 60/50 Hz 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 250/208 250/208 250/208 250/208 250/208 350/290 350/290 350/290 350/290 350/290 350/290 400/335 400/335 400/335 400/335 400/335 Volts/Sec MIN 20 20 20 20 20 25 25 25 25 25 30 30 30 30 30 30 30 30 30 30 20 20 20 20 20 20 50 50 50 50 50
Volts/Sec TC = TC = 100 C 125 C MIN 500 400 300 275 200 650 600 500 425 300 875 875 800 700 350 875 875 800 700 400 650 600 500 650 600 500 1100 1100 1000 900 500 500 475 400 500 475 400 700 700 625 575 600 600 520 475 600 600 520 475 500 475 400 350 400 350 250 200 Sec TYP 3 3 3 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 3 3 3 3 3 3 5 5 5 5 5 166 166 166 166 166 166 166 166 166 166 166 166 166 166 166 259 259 259 259 259 508 508 508 508 508 508 664 664 664 664 664 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 150 150 150 150 150 Amps2Sec Amps/Sec
General Notes
All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless specified otherwise. Operating temperature range (TJ) is -40 C to +125 C. Storage temperature range (TS) is -40 C to +125 C. Lead solder temperature is a maximum of 230 C for 10 seconds maximum 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown in the dimensional outline drawings. See Package Dimensions section.

(1) (2) (3) (4) For either polarity of MT2 with reference to MT1 terminal For either polarity of gate voltage (VGT) with reference to MT1 terminal See Gate Characteristics and Definition of Quadrants. See Figure E4.1 through Figure E4.4 for current rating at specific operating temperature and Figure 4.16 for free air rating (no heat sink). See Figure E4.5 and Figure E4.6 for iT and vT. See Figure E4.7 for VGT versus TC. See Figure E4.8 for IGT versus TC. See Figure E4.9 for IH versus TC. See Figure E4.10 and Figure E4.11 for surge rating with specific durations.
(5) (6) (7) (8) (9)
E4 - 5
Alternistor Triacs
Data Sheets
(10) See Figure E4.12 for tgt versus IGT. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 400 mA dc for 16 A to 40 A devices and 100 mA for 6 A to 12 A devices. (13) See Figure E4.1 through Figure E4.4 for maximum allowable case temperature at maximum rated current. (14) Pulse width 10 s; IGT IGTM (15) For 6 A to 12 A devices, RL = 60 ; 16 A and above, RL = 30 (16) 40 A pin terminal leads on K package can run 100 C to 125 C. (17) Alternistor does not turn on in Quadrant IV. (18) TC = TJ for test conditions in off state (19) IGT = 200 mA for 6 A to 12 A devices and 500 mA for 16 A to 40 A devices with gate pulse having rise time of 0.1 s. (20) Minimum non-trigger VGT at 125 C is 0.2 V.
(-)
MT2
(-)
MT2
IGT GATE MT1
(+)
IGT GATE MT1
IGT
IGT GATE
REF MT2
QII QI QIII QIV

(+)
REF
+
MT2 IGT GATE MT1
IGT
MT1 REF
Teccor triacs may be turned on in the following ways: In-phase signals (with standard AC line) using Quadrants I and III Application of unipolar pulses (gate always negative), using Quadrants II and III with negative gate pulses
REF MT2 NEGATIVE (Negative Half Cycle) NOTE: Alternistors will not operate in QIV
Teccors isolated alternistor packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.
In all cases, if maximum surge capability is required, gate pulses should be a minimum of one magnitude above minimum IGT rating with a steep rising waveform (1 s rise time). If QIV and QI operation is required (gate always positive), see Figure AN1002.8, Amplified Gate Thyristor Circuit.
from Leads to Mounting Tab *
V AC RMS 2500 4000
TO-218 Isolated
Standard N/A
TO-220 Isolated
Standard Optional **
TO-218X Isolated
Standard N/A
* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.
Thermal Resistance (Steady State) R JC [R JA] (TYP.) C/W

Package Code K J L R D V N
Type
TO-218 Isolated * 6A 8A 10 A 12 A 16 A 25 A 30 A 35 A 40 A
TO-218X Isolated *
1.35
1.32
TO-220 Isolated ** 3.3 [50] 2.8 2.6 2.3 2.1 2.0 2.3
TO-220 Non-Isolated 1.80 [45] 1.50 1.30 1.20 1.10 0.87 0.85
TO-252 D-Pak 2.1 1.8
TO-251 V-Pak 2.3 [64] 2.1
TO-263 D2Pak 1.80 1.50 1.30 1.20 1.10 0.87
0.97
0.95
* UL Recognized Product per UL File E71639 ** For 4000 V isolation, use V suffix in part number.
E4 - 6
Data Sheets
Alternistor Triacs
Maximum Allowable Case Temperature (TC) - C
130
120 110 100 90 80 70 60 0 0 2 4 6A TO-220 (NON-ISOLATED) TO-263, TO-251 and TO-252
10A TO-220 (NON-ISOLATED) and D2 PAK 12A TO-220 (ISOLATED)
130
120
110
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 35 A TO-220 (Non-isolated) and TO-263 25 A and 30 A TO-220 (Isolated)
100
90
6A TO-220 (ISOLATED)
80 25 A TO-220 (Non-isolated) TO-218 (Isolated) TO-263
70
60
50
10
12
14
10
20
25
30
40
50
RMS On-State Current [lT(RMS)] - AMPS
20
130 120 12 A TO-220 (Non-isolated) and TO-263 10 A TO-220 (Isolated)
18
16 14 12 10 8 6 4 2 0 0
TC = 25 C
110 100 90 80 70 60 0 0 2 4 6 8 8 A TO-220 (Isolated) 8 A TO-220 (Non-isolated), TO-263, TO-251, and TO-252
6 A to 12 A Devices
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 10 12 14
0.6
0.8
1.0
1.2
1.4
1.6
130
90 80
Maximum Allowable Case Temperature (T C ) C
120 110
TO
16 A
-22
Positive or Negative Instantaneous On-state Current (i ) Amps
16A
TC = 25C
70 60
0 ( No
-22
n-is
100 90 80 70 60 0 0 5
0( Iso
lat
ed
63
TO
ola
ted
) a nd TO -2
40 A Devices
50 40
25 A to 35 A Devices
30 20
10 15
16 A Devices
10 0 0 0.6 0.8 1.0 1.2 1.4
T
1.6
1.8
RMS On-state Current [I T(RMS) ] Amps
Positive or Negative Instantaneous On-state Voltage (v ) Volts
E4 - 7
Alternistor Triacs
Data Sheets
200
2.0
Peak Surge (Non-Repetitive) On-state Current (ITSM) Amps
V GT (T C = 25 C)
120 100 80 60 50 40 30 20
10 A to 12 A Devices 8 A Devices
Notes: 1) Gate control may be lost during and immediately following surge current interval 2) Overload may not be repeated until junction temperature has returned to steady state rated value.
1.5
V GT
8 A TO-251 and TO-252 6 A Devices 6 A TO-251 and TO-252
1.0
Ratio of
.5
10 8 6 5 4 3 2
0 -65
-40
-15
+25
+65
+125
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [IT(RMS)]: Maximum Rated Value at Specified Case Temperature
1 1 2 3 4 5 6 8 10 20 30 40 60 80 100 200 300 600 1000
Case Temperature (T C ) C
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration (6 A to 12 A)
1000
Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps
4.0
I GT (T C = 25 C)
400 300 250 200
SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature
3.0
I GT
40 A Devices 35 A Devices
2.0
100 80 60 50 40 30 20
30 A Devices
Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
Ratio of
1.0
25 A Devices 16 A Devices
0 -65
-40
-15
+25
+65
+125
10 1
10
100
1000
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants versus Case Temperature
Figure E4.11 Peak Surge Current versus Surge Current Duration (16 A to 40 A)
4.0
INITIAL ON-STATE CURRENT = 400 mA dc 16 A to 40 A Devices = 100 mA dc 6 to 12A Devices
10
I H (T C = 25 C)
Typical Turn-on Time (t gt ) s
3.0
8 I GT = 80 to 100 mA 6
IH
2.0
4 I GT = 50 mA 2 I GT = 10 mA to 35 mA
Ratio of
1.0
0 -65
100
200
300
400
500
-40
-15
+25
+65
+125
DC Gate Trigger Current (I GT ) mA
E4 - 8
Data Sheets
Alternistor Triacs
18
120
16
14 12 10 8
100
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING NO HEATSINK
80
6A to 12A Devices
6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
TO-220 Devices
60
TO-251 Devices
40
25 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
RMS On-state Current [lT(RMS)] AmpsS
RMS On-state Current [IT (RMS)] Amps
18
CURRENT WAVEFORM: Sinusoidal
Average On-state Power Dissipation [P D (AV) ] Watts
16 LOAD: Resistive or inductive

CONDUCTION ANGLE: 360
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS On-state Current [I T(RMS) ] Amps 16A Devices
Figure E4.14 Power Dissipation (Typical) versus On-state Current (16 A)
45
Current Waveform: Sinusoidal
Average On-State Power Dissipation [P D(AV) ]Watts
40 Load: Resistive or Inductive 35 30

25 A
Conduction Angle: 360
25 20 15 10 5 0 0 4 8
30 A and 35 A Devices 40 A
12 16 20 24 28 32 36 40
RMS On-State Current [I T(RMS) ]Amps

E4 - 9
Notes
Se
le
ct
U.
L.
G O 1639 EC #E7 R
ed
Fi le
c Pa
ka
ge
Z NI
ED
E5
TO-92 *TO-220 Isolated
3-lead Compak TO-202
TO-252 D-Pak
TO-251 V-Pak
Sensitive SCRs
(0.8 A to 10 A)
E5
General Description
The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 A to 500 A. For gate currents in the 10 mA to 50 mA ranges, see SCRs section of this catalog. The TO-220 and TO-92 are electrically isolated where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques. Teccor's line of SCRs features glass-passivated junctions to ensure long-term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination. Tape-and-reel packaging is available for the TO-92 package. Consult the factory for more information. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.
Features
Electrically-isolated TO-220 package High voltage capability up to 600 V High surge capability up to 100 A Glass-passivated chip
Compak Features
Surface mount package 0.8 A series New small-profile three-leaded Compak package Four gate sensitivities available Packaged in embossed carrier tape with 2,500 devices per reel Can replace SOT-223
E5 - 1
Sensitive SCRs
Data Sheets
Part Number
Non-isolated
A
IT
(1)
VDRM & VRRM
IGT
(2) (12) (14) (18)
IDRM & IRRM

(20) (21)
VTM
(3) (10)
A
G
A A
A
TYPE
K G A
K A G
TO-92
TO-202
TO-251 V-Pak
Compak
TO-252 D-Pak
Amps IT(RMS) IT(AV) MAX 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 0.8 0.51 1.5 0.95 1.5 0.95 1.5 0.95 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 4 2.5 Volts MIN 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600
Amps TC or TL = TC or TL = TC or TL = Amps 25 C 100 C 110 C MAX MAX 12 2 100 12 2 100 12 2 100 50 2 100 50 2 100 50 2 100 200 2 100 200 2 100 200 2 100 500 2 100 500 2 100 500 2 100 200 1 50 200 1 50 200 2 100 12 1 50 12 1 50 12 2 100 50 1 50 50 1 50 50 2 100 500 1 50 500 1 50 500 2 100 200 1 50 200 1 100 200 1 100 200 1 100 200 2 100 200 2 100 200 2 100 200 2 100 500 2 100 500 2 100 500 2 100 50 2 100 50 2 100 50 2 100 200 2 100 200 2 100 200 2 100 Volts MAX 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.5 1.5 1.5 2.2 2.2 2.2 2.5 2.5 2.5 1.6 1.6 1.6 1.6 1.6 1.6
See Package Dimensions section for variations. (11) S2S1 S4S1 S6S1 S2S2 S4S2 S6S2 S2S S4S S6S S2S3 S4S3 S6S3 EC103B EC103D EC103M EC103B1 EC103D1 EC103M1 EC103B2 EC103D2 EC103M2 EC103B3 EC103D3 EC103M3 2N5064 2N6565 TCR22-4 TCR22-6 TCR22-8 T106B1 T106D1 T106M1 T107B1 T107D1 T107M1 S2004VS1 S4004VS1 S6004VS1 S2004VS2 S4004VS2 S6004VS2 S2004DS1 S4004DS1 S6004DS1 S2004DS2 S4004DS2 S6004DS2
0.8 A
1.5 A
4A
See General Notes on page E5 - 4 and Electrical Specifications Notes on page E5 - 5
E5 - 2
Data Sheets
Sensitive SCRs
VGT
(4) (12) (22)
IH
(5) (15) (16) (19)
IGM
(17)
VGRM
PGM
(17)
PG(AV)
ITSM
(6) (7) (13)
dv/dt
di/dt
tgt
(8)
tq
(9)
l2t
Volts TC or TL = TC or TL = TC or TL = mAmps -40 C 25 C 110 C MAX MAX 1.2 0.8 0.2 5 1.2 0.8 0.2 5 1.2 0.8 0.2 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 8 1.2 0.8 0.25 8 1.2 0.8 0.25 8 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.2 5 1.2 0.8 0.2 5 1.2 0.8 0.2 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1.2 0.8 0.25 8 1.2 0.8 0.25 8 1.2 0.8 0.25 8 1.2 0.8 0.25 5 1.2 0.8 0.25 5 1 0.8 0.25 5 1 0.8 0.25 5 1 0.8 0.25 5 1 0.8 0.2 5 1 0.8 0.2 5 1 0.8 0.2 5 1 0.8 0.2 6 1 0.8 0.2 6 1 0.8 0.2 6 1 0.8 0.2 4 1 0.8 0.2 4 1 0.8 0.2 4 1 0.8 0.2 6 1 0.8 0.2 6 1 0.8 0.2 6
Amps Amps 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Volts MIN 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 Watts 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Watts 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 60/50 Hz 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 20/16 30/25 30/25 30/25 30/25 30/25 30/25 Volts/Sec MIN 20 20 10 25 25 10 30 30 15 40 40 20 30 30 15 20 20 10 25 25 10 40 40 20 25 25 60 40 30 TYP (23) 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 Amps/Sec Sec TYP 2 2 2 3 3 3 4 4 4 5 5 5 3.5 3.5 3.5 2 2 2 3 3 3 5 5 5 2.2 2.2 3.5 3.5 3.5 4 4 4 5 5 5 3 3 3 4 4 4 Sec MAX 60 60 60 60 60 60 50 50 50 45 45 45 50 50 50 60 60 60 60 60 60 45 45 45 60 60 50 50 50 50 50 50 45 45 45 50 50 50 50 50 50 Amps2/Sec 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 3.7 3.7 3.7 3.7 3.7 3.7
8 8 8 8 8 8 8 8 8 8 8 8
See General Notes on page E5 - 4 and Electrical Specifications Notes on page E5 - 5
E5 - 3
Sensitive SCRs
Data Sheets
Part Number
Isolated
A
Non-isolated
A
A G A K
IT
(1)
VDRM & VRRM
IGT
(2) (12)
IDRM & IRRM

(20) (21)
VTM
(3) (10)
TYPE
K A
K A
TO-220
TO-202
TO-251 V-Pak
TO-252 D-Pak
Amps IT(RMS) MAX 6 6 6 6 6 6 8 8 8 8 8 8 10 10 10 10 10 10 IT(AV) MAX 3.8 3.8 3.8 3.8 3.8 3.8 5.1 5.1 5.1 5.1 5.1 5.1 6.4 6.4 6.4 6.4 6.4 6.4 Volts MIN 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 Amps MAX 200 200 200 500 500 500 200 200 200 500 500 500 200 200 200 500 500 500
Amps TC = 25 C MAX 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 TC = 110 C MAX 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 Volts MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
See Package Dimensions section for variations. (11) S2006LS2 S4006LS2 S6006LS2 S2006LS3 S4006LS3 S6006LS3 S2008LS2 S4008LS2 S6008LS2 S2008LS3 S4008LS3 S6008LS3 S2010LS2 S4010LS2 S6010LS2 S2010LS3 S4010LS3 S6010LS3 S2006FS21 S4006FS21 S6006FS21 S2006FS31 S4006FS31 S6006FS31 S2008FS21 S4008FS21 S6008FS21 S2008FS31 S4008FS31 S6008FS31 S2010FS21 S4010FS21 S6010FS21 S2010FS31 S4010FS31 S6010FS31 S2006VS2 S4006VS2 S6006VS2 S2006VS3 S4006VS3 S6006VS3 S2008VS2 S4008VS2 S6008VS2 S2008VS3 S4008VS3 S6008VS3 S2010VS2 S4010VS2 S6010VS2 S2010VS3 S4010VS3 S6010VS3 S2006DS2 S4006DS2 S6006DS2 S2006DS3 S4006DS3 S6006DS3 S2008DS2 S4008DS2 S6008DS2 S2008DS3 S4008DS3 S6008DS3 S2010DS2 S4010DS2 S6010DS2 S2010DS3 S4010DS3 S6010DS3
6A
8A
10 A

di/dt Maximum rate-of-change of on-state current; IGT = 50 mA pulse width 15 sec with 0.1 s rise time dv/dt Critical rate-of-rise of forward off-state voltage I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM and IRRM Peak off-state current at VDRM and VRRM IGT DC gate trigger current VD = 6 V dc; RL = 100 IGM Peak gate current IH DC holding current; initial on-state current = 20 mA IT Maximum on-state current ITSM Peak one-cycle forward surge current PG(AV) Average gate power dissipation PGM Peak gate power dissipation tgt Gate controlled turn-on time gate pulse = 10 mA; minimum width = 15 S with rise time 0.1 s tq Circuit commutated turn-off time VDRM and VRRM Repetitive peak off-state forward and reverse voltage VGRM Peak reverse gate voltage VGT DC gate trigger voltage; VD = 6 V dc; RL = 100 VTM Peak on-state voltage
General Notes
Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC registered data. See specifications table on pages E5 - 2 and E5 - 3. The case lead temperature (TC or TL) is measured as shown on dimensional outline drawings in the Package Dimensions section of this catalog. All measurements (except IGT) are made with an external resistor RGK = 1 k unless otherwise noted. All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature (TJ) is -65 C to +110 C for EC Series devices, -65 C to +125 C for 2N Series devices, -40 C to +125 C for TCR Series, and -40 C to +110 C for all others. Storage temperature range (TS) is -65 C to +150 C for TO-92 devices, -40 C to +150 C for TO-202 and Compak devices, and -40 C to +125 C for all others. Lead solder temperature is a maximum of +230 C for 10 seconds maximum 1/16" (1.59 mm) from case.
E5 - 4
Data Sheets
Sensitive SCRs
VGT
(4) (12) (22)
IH
(5) (19)
IGM
(17)
VGRM
PGM
(17)
PG(AV)
ITSM
(6) (13)
dv/dt
di/dt
tgt
(8)
tq
(9)
l2 t
TC = -40 C 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Volts TC = 25 C MAX 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8
Volts/Sec TC = 110 C 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 mAmps MAX 6 6 6 8 8 8 6 6 6 8 8 8 6 6 6 8 8 8 Amps 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Volts MIN 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 Watts 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Watts 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Amps 60/50 Hz 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 TC = 110 C TYP 10 8 8 10 8 8 10 8 8 10 8 8 10 8 8 10 8 8 Amps/Sec 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Sec TYP 4 4 4 5 5 5 4 4 4 5 5 5 4 4 4 5 5 5 Sec MAX 50 50 50 45 45 45 50 50 50 45 45 45 50 50 50 45 45 45 Amps2Sec 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41
Electrical Specifications Notes

(1) (2) (3) (4) (5) (6) (7) See Figure E5.1 through Figure E5.9 for current ratings at specified operating temperatures. See Figure E5.10 for IGT versus TC or TL. See Figure E5.11 for instantaneous on-state current (iT) versus onstate voltage (vT) TYP. See Figure E5.12 for VGT versus TC or TL. See Figure E5.13 for IH versus TC or TL. For more than one full cycle, see Figure E5.14. 0.8 A to 4 A devices also have a pulse peak forward current onstate rating (repetitive) of 75 A. This rating applies for operation at 60 Hz, 75 C maximum tab (or anode) lead temperature, switching from 80 V peak, sinusoidal current pulse width of 10 s minimum, 15 s maximum. See Figure E5.20 and Figure E5.21. See Figure E5.15 for tgt versus IGT. Test conditions as follows: TC or TL 80 C, rectangular current waveform Rate-of-rise of current 10 A/s Rate-of-reversal of current 5 A/s ITM = 1 A (50 s pulse), Repetition Rate = 60 pps VRRM = Rated VR = 15 V minimum, VDRM = Rated Rate-of-rise reapplied forward blocking voltage = 5 V/s Gate Bias = 0 V, 100 (during turn-off time interval)
(10) Test condition is maximum rated RMS current except TO-92 devices are 1.2 APK; T106/T107 devices are 4 APK. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) VD = 6 V dc, RL = 100 (See Figure E5.19 for simple test circuit for measuring gate trigger voltage and gate trigger current.) (13) See Figure E5.1 through Figure E5.9 for maximum allowable case temperature at maximum rated current. (14) IGT = 500 A maximum at TC = -40 C for T106 devices (15) IH = 10 mA maximum at TC = -65 C for 2N5064 Series and 2N6565 Series devices (16) IH = 6 mA maximum at TC = -40 C for T106 devices (17) Pulse Width 10 s (18) IGT = 350 A maximum at TC = -65 C for 2N5064 Series and 2N6565 Series devices (19) Latching current can be higher than 20 mA for higher IGT types. Also, latching current can be much higher at -40 C. See Figure E5.18. (20) TC or TL = TJ for test conditions in off state (21) IDRM and IRRM = 50 A for 2N5064 and 100 A for 2N6565 at 125 C (22) TO-92 devices specified at -65 C instead of -40 C (23) TC = 110 C
(8) (9)
E5 - 5
Sensitive SCRs
Data Sheets
Thermal Resistance (Steady State) RJC [R JA] C/W (TYPICAL)

Package Code
E L F2 F C D V
Type
TO-92 0.8 A 1.5 A 4.0 A 6.0 A 8.0 A 10.0 A 75 [160] 50 [160]
TO-220
TO-202 Type 2, 4, & 41
TO-202 Type 1 & 3
Compak 60*
TO-252 D-Pak
TO-251 V-Pak
10 [100] 4.0 [65] 3.4 3.0
6.2 [80] 4.3 3.9 3.4
3.0 1.8 1.5 1.45
3.8 [85] 2.4 2.1 1.72
*Mounted on 1
cm2 copper
foil surface; two-ounce copper foil
Teccors isolated sensitive SCRs will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows other standard and optional isolation ratings.
Electrical Isolation * from Leads to Mounting Tab V AC RMS TO-220 Standard 2500 Optional ** 4000
*UL Recognized File #E71639 **For 4000 V isolation, use V suffix in part number.
130 120 110 100 90 80 70 60 TCR22 Devices 50 40 0 0.5 1.0 1.5 2.0 2.6 2.5 3.0 3.5 4.0 T106 and T107 Type 2 and 4 4 A TO-251 and TO-252 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing
T106 and T107 Type 1 and 3

130 120
110 100
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing JEDEC 2N Series
Figure E5.2 Maximum Allowable Case Temperature versus RMS On-state Current
130
90 80
120 110 100
EC Series
70
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing
Compak
60 50 0.1
JEDEC 2N Series 90 80 70 60 50
0.51
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RMS On-State Current [IT(RMS)] Amps
EC Series Compak
0.1
0.2
0.3
0.4
0.5
0.6
Average On-state Current [IT(AV)] Amps
Figure E5.3 Maximum Allowable Case Temperature versus Average On-state Current
E5 - 6
Data Sheets
Sensitive SCRs
140
130 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing
120
120
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING
110 100 90 80 70 60 50 40 0 0.5 TCR22 Devices
100 T106/T107 TO-202 Type 1 and 3
80
T106 and T107 T106 and T107 Type 2 and 4 Type 1 and 3
60 TO-220 40 T106/T107 TO-202 Type 2 and 4 and TO-251 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.95
1.65
1.9
2.54
1.0
1.5
2.0
2.5
3.0
20
Figure E5.7 Maximum Allowable Ambient Temperature versus Average On-state Current
140
120
115 110 105 100 95 90 85 80 0 2 4 6 8 10 6 A TO-220 and TO-202 8 A TO-220 and TO-202 10 A TO-220 and TO-202 6 A TO-251 and TO-252
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 TEMPERATURE: Measured as Shown on Dimensional Drawings
100
EC Series IT(RMS)
8 A TO-251 and TO-252 10 A TO-251 and TO-252
80
1.5 A Devices and JEDEC 2N Series IT(RMS) 1.5 A and JEDEC 2N Series IT(AV) and EC Series IT(AV)
60
40
20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
On-state Current Amps
140
120
100
110 6 A TO-251 and TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawings
105
100 6 A TO-220 and TO-202 8 A TO-220 and TO-202 10 A TO-220 and TO-202 8 A TO-251 and TO-252 10 A TO-251 and TO-252
80
T106/T107 TO-202 Type 1 and 3
95
60
T106/T107 TO-202 Type 2 and 4 and TO-251 TO-220
90
40
85
20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
80 0 1 2 3 4 5 6 7
Figure E5.6 Maximum Allowable Ambient Temperature versus RMS On-state Current
E5 - 7
Sensitive SCRs
Data Sheets
9.0 8.0
IH(TC = 25 C)
4.0 See General Notes for specific operating temperature range.

See General Notes for specific device operating temperature range.
IGT (TC = 25 C)
7.0 6.0 5.0 4.0 3.0 2.0 1.0
3.0
IGT
IH
2.0
Ratio of
Ratio of
1.0
0
0 -65 -40 -15 +25 +65 +110 +125
-65
-40
-15
+25
+65
+110 +125
Figure E5.10 Normalized DC Gate-Trigger Current versus Case Temperature
Instantaneous On-state Current (iT) Amps
32 28 24 20 16 12 8 4 0 0 .6 .8 1.0 1.2 1.4 1.6

0.8 A to 1.5 A TO-92, T106/T107, and Compak 6 A to 10 A Devices
TC = 25C
4 A TO-251 and TO-252
Instantaneous On-state Voltage (vT) Volts
Figure E5.11 Instantaneous On-state Current versus On-state Voltage (Typical)
2.0 See General Notes for specific operating temperature range
VGT (TC = 25 C)
1.5
VGT
1.0
Ratio of
0.5
0 -65 -40 -15 +25 +65 +110 +125
Figure E5.12 Normalized DC Gate-Trigger Voltage versus Case Temperature
E5 - 8
Data Sheets
Sensitive SCRs
200
100 80 60 50 40 30
10 A Devices
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [IT(RMS)]: Max Rated Value at Specified Case Temperature 8 A Devices 6 A Devices
4 A TO-251 and TO-252

20
10 8 6 5 4 3 2 Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
TO-106 and TO-107 1.5 A Devices
0.8 A TO-92 and Compak
1 1 2 3 4 5 6 8 10 20 30 40 50 60 80 100 200 300 400 600 1000

Figure E5.14 Peak Surge On-state Current versus Surge Current Duration
100
IGT = 50 A MAX IGT = 200 A MAX
5.0
CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180
4.0
IGT = 500 A MAX
3.0
T106 and T107
10
Turn-on Time (tgt) s
2.0 4 A TO-251 and TO-252 1.0 0.8 A TO-92 and Compak 1.5 A Devices
IGT = 12 A MAX
1.0
TC = 25 C
Figure E5.16 Power Dissipation (Typical) versus RMS On-state Current
0.1 0.01
0.1
10
100
DC Gate Trigger Current (IGT) mA
Figure E5.15 Typical Turn-on Time versus Gate Trigger Current
E5 - 9
Sensitive SCRs
Data Sheets
12
10
Reset Normally-closed Pushbutton
100 + 6 VDC V1
D.U.T.
IGT IG 1k (1%)
IN4001 100 VGT R1
6 A to 10 A TO-220, TO-202, TO-251, and TO-252
0 0 2 4 6 8 10
Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current
Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and Current Measurement
9.0 8.0 See General Notes for specific device operating temperature range.
Note: V1 0 V to 10 V dc meter VGT 0 V to 1 V dc meter IG 0 mA to 1 mA dc milliammeter R1 1 k potentiometer To measure gate trigger voltage and current, raise gate voltage (VGT) until meter reading V1 drops from 6 V to 1 V. Gate trigger voltage is the reading on VGT just prior to V1 dropping. Gate trigger current IGT can be computed from the relationship V GT I GT = I G ------------ Amps 1000 where IG is reading (in amperes) on meter just prior to V1 dropping.
IL IL (TC = 25 C) Ratio of
7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 -65 -40
-15
+25
+65
+110 +125
Note: IGT may turn out to be a negative quantity (trigger current flows out from gate lead). If negative current occurs, IGT value is not a valid reading. Remove 1 k resistor and use IG as the more correct IGT value. This will occur on 12 A gate products.
Figure E5.18 Normalized DC Latching Current versus Case Temperature
E5 - 10
Data Sheets
Sensitive SCRs
180 160
Peak Discharge Current (ITM) Amps
140 120
1 Hz 12 Hz
100 80 60 ITM 40 20 0 1.0 3.0 5.0 7.0 10 30 50 70 100 tW

tW = 5 TIME CONSTANTS
60 Hz
0.8 A to 4 A
Peak Current Duration (tW) s

Figure E5.20 Peak Repetitive Capacitor Discharge Current
180 160
140 120 100 80 60 40 20 0 1.0 3.0 5.0 7.0 10 30 50 70 100
1 Hz
12 Hz
ITM tW 0.8 A to 4 A
60 Hz
Peak Current Duration (tW) s

Figure E5.21 Peak Repetitive Sinusoidal Curve
E5 - 11
Notes
Se
le
ct
U.
L.
G O 1639 EC #E7 R
ed
Fi le
c Pa
ka
ge
Z NI
ED
TO-263 D 2 Pak
E6
TO-92
*TO-218
TO-252 D-Pak TO-202
*TO-218X
3-lead Compak
*TO-220
TO-251 V-Pak
SCRs
(1 A to 70 A)
E6
General Description
The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 A to 500 A ranges are required, see Sensitive SCRs section of this catalog. Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques. The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccors glass offers a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.
Features
Electrically-isolated package High voltage capability 200 V to 1000 V High surge capability up to 950 A Glass-passivated chip
Compak SCR
Surface mount package 1 A series New small profile three-leaded Compak package Packaged in embossed carrier tape with 2,500 devices per reel Can replace SOT-223
E6 - 1
SCRs
Data Sheets
Part Number
Isolated
A
Non-isolated
A
A
G
IT
(1) (2) (15)
VDRM & VRRM
IGT
(4)
TYPE
A A
K G
K A
K A
K A
G
K A
TO-92
TO-220
TO-202
TO-220
TO-251 V-Pak
Compak
TO-252 D-Pak
Amps IT(RMS) IT(AV) MAX 0.64 0.64 0.64 3.8 3.8 3.8 3.8 3.8 5.1 5.1 5.1 5.1 5.1 6.4 6.4 6.4 6.4 6.4 7.6 7.6 7.6 7.6 7.6 Volts MIN 200 400 600 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 mAmps MIN 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 MAX 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 20 20 MAX 1 1 1
See Package Dimensions section for variations. (11) S201E S2N1 S4N1 S6N1 S2006L S2006F1 S4006F1 S6006F1 S2006V S4006V S6006V S8006V SK006V S2008F1 S4008F1 S6008F1 S2008R S4008R S6008R S8008R SK008R S2010F1 S4010F1 S6010F1 S2010R S4010R S6010R S8010R SK010R S2012R 12 A S4012R S6012R S8012R SK012R S2008V S4008V S6008V S8008V SK008V S2010V S4010V S6010V S8010V SK010V S2012V S4012V S6012V S8012V SK012V S2006D S4006D S6006D S8006D SK006D S2008D S4008D S6008D S8008D SK008D S2010D S4010D S6010D S8010D SK010D S2012D S4012D S6012D S8012D SK012D S4006L S6006L S8006L SK006L S2008L S4008L S6008L S8008L SK008L S2010L 10 A S4010L S6010L S8010L SK010L
1A
S401E S601E
6 6 6 6 6 8 8 8 8 8 10 10 10 10 10 12 12 12 12 12
6A
8A

di/dt Maximum rate-of-rise of on-state current; IGT = 150 mA with 0.1 s rise time dv/dt Critical rate of applied forward voltage I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM and IRRM Peak off-state forward and reverse current at VDRM and VRRM Igt dc gate trigger current; VD = 12 V dc; RL = 60 for 1 to 16 A devices and 30 for 20 to 70 A devices IGM Peak gate current IH dc holding current; gate open IT Maximum on-state current ITSM Peak one-cycle forward surge current PG(AV) Average gate power dissipation PGM Peak gate power dissipation tgt Gate controlled turn-on time; gate pulse = 100 mA; minimum width = 15 s with rise time 0.1 s tq Circuit commutated turn-off time
VDRM and VRRM Repetitive peak off-state forward and reverse voltage Vgt DC gate trigger voltage; VD = 12 V dc; RL = 60 for 1 to 16 A devices and 30 for 20 to 70 A devices VTM Peak on-state voltage at maximum rated RMS current
General Notes
All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (TJ) is -65 C to +125 C for TO-92 devices and -40 C to +125 C for all other packages. Storage temperature range (TS) is -65 C to +150 C for TO-92 devices, -40 C to +150 C for TO-202 and TO-220 devices, and -40 C to +125 C for all others. Lead solder temperature is a maximum of 230 C for 10 seconds maximum; 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown on dimensional outline drawings in the Package Dimensions sectionof this catalog.
E6 - 2
Data Sheets
SCRs
IDRM & IRRM

(14)
VTM
(3)
VGT
(8) (17)
IH
(5) (13)
IGM
(12)
PGM
(12)
PG(AV)
ITSM
(6) (10)
dv/dt
I2 t
di/dt
tgt
(7)
tq
(9) (10)
mAmps TC = 25 C 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.02 TC = TC = 100 C 125 C MAX 0.2 0.2 0.2 0.2 0.2 0.2 0.2 3 0.2 0.2 0.2 0.2 3 0.2 0.2 0.2 0.5 3 0.5 0.5 0.5 0.5 3 1 1 1 1 0.5 0.5 0.5 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6
Volts TC = 25 C MAX 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 mAmps MAX 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 40 40 1.5 1.5 1.5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 15 15 15 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 0.3 0.3 0.3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Amps Watts Watts
Amps 60/50 Hz 30/25 30/25 30/25 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 100/83 120/100 120/100 120/100 120/100 120/100
Volts/Sec TC = 100 C MIN 40 40 40 350 350 300 250 100 350 350 300 250 100 350 350 300 250 100 350 350 300 250 100 250 250 225 200 250 250 225 200 250 250 225 200 TC = 125 C MIN 20 20 20 250 250 225 200 3.7 3.7 3.7 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 60 60 60 60 60 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Amps2Sec Amps/Sec Sec TYP 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Sec MAX 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35

(1) (2) (3) (4) (5) (6) (7) (8) (9) See Figure E6.5 through Figure E6.16 for current rating at specified operating case temperature. See Figure E6.1 and Figure E6.2 for free air current rating. See Figure E6.19 and Figure E6.20 for instantaneous on-state current versus on-state voltage (typical). See Figure E6.18 for IGT versus TC. See Figure E6.17 for IH versus TC. For more than one full cycle rating, see Figure E6.23. See Figure E6.22 for tgt versus IGT. See Figure E6.21 for VGT versus TC. Test conditions are as follows: IT = 1 A for 1 A devices and 2 A for all other devices Pulse duration = 50 s, dv/dt = 20 V/s, di/dt = -10 A/s for 1 A devices, and -30 A/s for other devices IGT = 200 mA at turn-on (10) See Figure E6.5 through Figure E6.10 for maximum allowable case temperatures at maximum rated current.
(11) See package outlines for lead form configuration. When ordering special lead forming, add type number as suffix to part number. (12) Pulse width 10 s (13) Initial on-state current = 200 mA dc for 1 A through 16 A devices; 400 mA dc for 20 A through 70 A devices. (14) TC = TJ for test conditions in off state. (15) The R, K, or M package rating is intended for high surge condition use only and not recommended for 50 A rms continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. Teccor's J package or W package is recommended for 50 A rms continuous current requirements. (16) For various durations of an exponentially decaying current waveform, see Figure E6.3 and Figure E6.4. (tW is defined as 5 time constants.) (17) Minimum non-trigger VGT at 125 C is 0.2 V.
E6 - 3
SCRs
Data Sheets
Part Number
Isolated
A
Non-isolated
A
A
IT
(1) (15)
VDRM & VRRM
IGT
(4)
IDRM & IRRM

(14)
TYPE
G A
A A K
K A
G
G K A
G K A
Amps TO-263 D2Pak IT(RMS) 15 15 15 15 15 IT(AV) 9.5 9.5 9.5 9.5 9.5 10 10 10 10 10 12.8 12.8 12.8 12.8 12.8 16 16 16 16 16 22 22 22 22 22 25 25 25 25 25 35 35 35 35 35 41 41 41 41 41 45 45 45 45 Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 mAmps MIN 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 50 50 50 50 50 50 50 50 50 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.02 0.01 0.01 0.01 0.02 0.03 0.01 0.01 0.01 0.02 0.03 0.02 0.02 0.02 0.02 0.03 0.02 0.02 0.02 0.02 TC = 25 C
mAmps TC = 100 C MAX 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1.0 3 1 1 1 1.5 3 1 1 1 1.5 3 1 1 1 1.5 5 1 1 1 1.5 5 1.5 1.5 1.5 2 5 1.5 1.5 1.5 2 3 3 3 5 3 3 3 5 2 2 2 3 2 2 2 3 2 2 2 3 2 2 2 3 1 1 1 2 1 1 1 2 1 1 1 2 TC = 125 C
TO-220 S2015L
TO-218X
TO-218
TO-220
TO-218X
TO-218
See Package Dimensions section for variations. (11) S4015L S6015L S8015L SK015L S2016R S2016N S4016N S6016N S8016N SK016N S4016R S6016R S8016R SK016R S2020L S4020L S6020L S8020L SK020L S2025L S2025R S4025R S6025R S8025R SK025R S2035J S2035K S4035K S6035K S8035K SK035K S2040R S2040N S4040N S6040N S8040N SK040N S2055W S4055W S6055W S8055W S2055M S4055M S6055M S8055M SK055M S2055N S4055N S6055N S8055N SK055N S4040R S6040R S8040R SK040R S2055R S4055R S6055R S8055R SK055R S2065J S2065K S4065K S6065K S8065K SK065K S2070W S4070W S6070W S8070W S4065J S6065J S8065J S4035J S6035J S8035J S2025N S4025N S6025N S8025N SK025N S4025L S6025L S8025L SK025L
MAX
15 A
16 16 16 16 16 20 20 20 20 20 25 25 25 25 25 35 35 35 35 35 40 40 40 40 40 55 55 55 55 55 65 65 65 65 65 70 70 70 70
16 A
20 A
25 A
35 A
40 A
55 A
65 A
70 A
E6 - 4
Data Sheets
SCRs
VTM
(3)
VGT
(8) (17)
IH
(5) (13)
IGM
(12)
PGM
(12)
PG(AV)
ITSM
(6) (10) (16)
dv/dt
I2 t
di/dt
tgt
(7)
tq
(9) (10)
Volts
Volts mAmps MAX 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 60 60 60 60 60 80 80 80 80 80 80 80 80 80 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 4 4 4 4 4 5 5 5 5 5 5 5 5 5 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 40 40 40 40 40 50 50 50 50 50 50 50 50 50 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1 1 1 1 1 1 1 1 1 Amps Watts Watts
Amps 60/50 Hz 225/188 225/188 225/188 225/188 225/188 225/188 225/188 225/188 225/188 225/188 300/255 300/255 300/255 300/255 300/255 350/300 350/300 350/300 350/300 350/300 500/425 500/425 500/425 500/425 500/425 520/430 520/430 520/430 520/430 520/430 650/550 650/550 650/550 650/550 650/550 950/800 950/800 950/800 950/800 950/800 950/800 950/800 950/800 950/800
Volts/Sec TC = 100 C MIN 450 450 425 400 200 450 450 425 400 200 450 450 425 400 200 450 450 425 400 200 450 450 425 400 200 650 650 600 500 250 650 650 600 500 250 650 650 600 500 250 650 650 600 500 550 550 500 475 550 550 500 475 550 550 500 475 550 550 500 475 350 350 325 300 350 350 325 300 350 350 325 300 350 350 325 300 TC = 125 C MIN 350 350 325 300 210 210 210 210 210 210 210 210 210 210 374 374 374 374 374 510 510 510 510 510 1035 1035 1035 1035 1035 1122 1122 1122 1122 1122 1750 1750 1750 1750 1750 3745 3745 3745 3745 3745 3745 3745 3745 3745 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 150 150 150 150 150 150 150 150 150 150 175 175 175 175 175 175 175 175 175 175 200 200 200 200 200 200 200 200 200 Amps2Sec Amps/Sec Sec TYP 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 Sec MAX 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35
TC = 25 C TC = 25 C MAX MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2 2 2 2 2 2 2 2 2
E6 - 5
SCRs
Data Sheets
Thermal Resistance (Steady State) RJC [RJA] C/W (TYP.) Pkg. Code
L F F2 R J W K M D V N
Type
TO-220 Isolated
TO-202 Type 1 Non-isolated 4.3 [45] 3.9 3.4
TO-202 Type 2 Non-isolated 9.5 [70]
TO-220 Non-isolated
TO-218X Isolated
TO-218X Non-isolated See below
TO-218 Isolated
TO-218 Non-isolated
TO-252 TO-251AA D-Pak V-Pak Surface Mount Non-isolated 1.7 2.3 [70] 2.0 1.7 1.6
TO-263 D2Pak Non-isolated
1A 6A 8A 10 A 12 A 15 A 16 A 20 A 25 A 35 A 40 A 55 A 65 A 70 A
4.0 [50] 3.4 3.0 2.5
1.8 [40] 1.6 1.5 1.3
1.5 1.45 1.4
1.3 1.0 0.70 0.70 0.6 0.53 0.86 0.60 0.86 0.53 0.5
2.4 2.35 1.0 0.6 0.5
Thermal Resistance (Steady State) RJC [RJA] C/W (TYP.)
Package Code Type C E
Teccors isolated SCR packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows standard and optional isolation ratings.
Electrical Isolation * from Leads to Mounting Tab TO-220 TO-218X Isolated Isolated
Standard Optional ** Standard N/A
1A
Compak 35 *
TO-92 50 [145]
V AC RMS 2500 4000
TO-218 Isolated
Standard N/A
* Mounted on
1cm2
copper foil surface; two-ounce copper foil
* UL Recognized File #E71639 ** For 4000 V isolation, use V suffix in part number.
E6 - 6
Data Sheets
SCRs
120
8 A TO-220 (Non-isolated)
80
Normalized Peak Current
100
1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125
6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and 3)
60
1 A TO-92
40
6 A TO-202 (Types 2 and 4) and 6 A TO-251

20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure E6.1 Maximum Allowable Ambient Temperature versus RMS On-state Current
Figure E6.4 Peak Capacitor Discharge Current Derating (6 A through 55 A)
120 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING
130 120
100
110 100 90 80 70 60 50 0 0.2 0.4 0.6 0.8 1.0 1.2 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawing
80
1 A Devices
1 A TO-92
60
6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and 3)
40
6 A TO-202 (Types 2 and 4) and 6 A TO-251

20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Figure E6.2 Maximum Allowable Ambient Temperature versus Average On-state Current
Figure E6.5 Maximum Allowable Case Temperature versus RMS On-state Current (1 A)
130
1000
120
55 A Devices
8 A TO-220 (Non-isolated) TO-251 and TO-252 10 A TO-220 (Isolated) and 10 A TO-202
110
6 A Devices
100 90 80 70 60 50 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawings 0 2 4 6 8
300 200
25 A Devices 15 A and 16 A Devices
8 A TO-220 (Isolated) and 8 A TO-202
100
6 A to 10 A Devices 12 A Devices
50 ITM tw tw = 5 times constants 20 0.5 1.0 2.0 5.0 10 20 50
10
12
Pulse Current Duration (tw) ms
Figure E6.3 Peak Capacitor Discharge Current (6 A through 55 A)
Figure E6.6 Maximum Allowable Case Temperature versus RMS On-state Current (6 A, 8 A, and 10 A)
E6 - 7
SCRs
Data Sheets
130
130
120 110 100 90 80 70 60 50 0 55 A TO-220 (Non-isolated) and TO-263 *
120 110 100 90 80 70 60 50 0 4

16 A TO-220 (Non-isolated) and TO-263 20 A TO-220 (Isolated)
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawings
55 A TO-218AC (Non-isolated) *
10 A TO-251 and 10 A TO-252 12 A TO-220 (Non-isolated) TO-251 and TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawing
65 A TO-218AC (Isolated) *
* The R, K or M package rating is intended only for high surge condition use and is not recommended for >50 A rms continuous current use, since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >50 A rms continuous current requirements. 10 20 30 40 50 60 70 75
12
16
20
Figure E6.7 Maximum Allowable Case Temperature versus RMS On-state Current (10 A, 12 A, 16 A, and 20 A)
Figure E6.10 Maximum Allowable Case Temperature versus RMS On-state Current (55 A and 65 A)
130 120
130 120 110 100
110 100 90 80 70 60 50 0
25 A TO-220 (Non-isolated) and TO-263
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawings 4 8 12 16 20 24 28
1 A Devices
90 80 70 60
32
36
50 0
0.2 0.4 0.6 0.8
Figure E6.8 Maximum Allowable Case Temperature versus RMS On-state Current (25 A and 35 A)
130 120
Figure E6.11 Maximum Allowable Case Temperature versus Average On-state Current (1 A)
130
12 A TO-220 (Non-isolated) and TO-251 and TO-252
120
10 A TO-251 10 A TO-252
110 100 90 80 70 60 50 0 10 20 30 40 50 60 70
40 A TO-220 (Non-isolated) and TO-263 65 A TO-218X (Isolated)
70 A TO-218X (Non-isolated)
110
6 A TO-220 6 A TO-202
10 A TO-220 (Isolated) and 10 A TO-202
100
6 A TO-251 6 A TO-252
8 A TO-220 (Isolated) 8 A TO-202
90
80 0 1 2 3 4 5 6 7 8
Figure E6.9 Maximum Allowable Case Temperature versus RMS On-state Current (40 A through 70 A)
Figure E6.12 Maximum Allowable Case Temperature versus Average On-state Current (8 A, 10 A, and 12 A)
E6 - 8
Data Sheets
SCRs
130
130
16 AT O-2 20
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as shown on dimensional drawings
120 Case Temperature (TC) C 110 100 90 80 70 60 50 0
120 Case Temperature (TC) C 110 100 90 80 70 60 50 0

55 A TO-220 (Non-isolated) and TO-263 *
(No
n-is
olat
Maximum Allowable
ed)
-26
3
Maximum Allowable
and
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measure as shown on dimensional drawings 55 A TO-218AC (Non-isolated) *
TO
65 A TO-218AC (Isolated) *
* The R, K, or M package
rating is intended only for high surge condition use and is not recommended for >32 A (AV) continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >32 A (AV) continuous current requirements.
15 A TO-220 (Isolated) 2 4 6 8 10 12 14
10
20
30
40
50
Figure E6.13 Maximum Allowable Case Temperature versus Average On-state Current (10 A through 20 A)
Figure E6.16 Maximum Allowable Case Temperature versus Average On-state Current (55 A and 65 A)
130
120
110
IH (TC = 25 C)
2.0
INITIAL ON-STATE CURRENT = 200 mA dc for 1 A to 20 A Devices and 400 mA dc for 25 A to 70 A Devices
1.5
100
IH
90
25A TO-220 (Isolated)
1.0
80
Ratio of
.5
70
60
25A TO-220 (Non-isolated) and TO-263
0
50 0 .4 8 12 16 20 24
-40
-15
+25
+65
+105 +125
Figure E6.14 Maximum Allowable Case Temperature versus Average On-state Current (25 A and 35 A)
130 120
Figure E6.17 Normalized dc Holding Current versus Case Temperature
2.0
110 100 90 80 40 A TO-220 (Non-isolated) and TO-263 55 A TO-218X (Non-isolated) 65 A TO-218X (Isolated)
IGT (TC = 25 C)
1.5
IGT Ratio of
1.0
70 60 50 0
0.5
10
20
30
40
50
-40
-15
+25
+65
+105 +125
Figure E6.15 Maximum Allowable Case Temperature versus Average On-state Current (40 A through 70 A)
Figure E6.18 Normalized DC Gate-Trigger Current versus Case Temperature
E6 - 9
SCRs
Data Sheets
90
Instantaneous On-state Current (iT) Amps
1.5
80 70 60 50
VGT (TC = 25 C)
TC = 25C
25 A Devices
40
12 A Devices
30
VGT
6 A to 10 A Devices
1.0
20 10
Ratio of
1 A Devices
0.5
0 0 0.6 0.8 1.0 1.2 1.4 1.6
-40
-15
+25
+65
+105 +125
Figure E6.19 Instantaneous On-state Current versus On-state Voltage (Typical) (6 A through 25 A)
Figure E6.21 Normalized DC Gate-trigger Voltage versus Case Temperature
200 180
7 6 A to 12 A Devices
TC = 25C
Turn-on Time (tgt) s
160 Instantaneous On-state Current (iT) Amps 140 120 100 80 60 40 20 0 0
TC = 25C
65 A and 70 A Devices
4 40 A to 70 A Devices 3 1 A Devices
55 A Devices
2 1
35 A to 40 A Devices .6 .8 1.0 1.2 1.4 1.6

0 10 20 30 40 50 60 80 100 200
DC Gate Trigger Current (IGT) mA
Figure E6.20 Instantaneous On-state Current versus On-state Voltage (Typical) (35 A through 70 A)
Figure E6.22 Typical Turn-on Time versus Gate-trigger Current
E6 - 10
Data Sheets
SCRs
1000 800 600 500 400 300 200
65 A
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [IT(RMS)]: MaxRated Value at Specified Case Temperature
TO-2 18
70 A Devic Devic
es
35 A 25 A 16 A
10 A Devic es
Devic
55 A
Devic es
es
es 40 A Devic es
es
100 80 60 50 40 30 20
Devic
20 A 15 A Devic es
Devic
es
12 A
Devic es 8AD evice s 6A Dev ices
10 8 6 5 4 3 2
1A Dev
Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
ices
1 1 2 3 4 5 6 7 8 10 20 30 40 60 80100 200 300400 600 1000

18 16 14 12 10 8 6 4 2 0 15 A to 20 A Devices 12 A Devices 6 A to 10 A Devices
1.0 0.8
1.0 A Devices
0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0
10
12
14
16
18
20

Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current (1 A)
Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current (6 A through 20 A)
E6 - 11
SCRs
Data Sheets
32
60
Average On-state Power Dissipation [PD(AV)] x Watts
28 24 20 16 12 8
Power Dissipation [PD(AV)] Watts
es
Average On-state
25
4 0 0 4 8
TO
22
ic ev
es
20
10
12
16
20
24
28
32
36
0 10 20 30 40 50 60 70

Figure E6.26 Power Dissipation (Typical) versus RMS On-state Current (25 A and 35 A)
Figure E6.27 Power Dissipation (Typical) versus RMS On-state Current (40 A through 70 A)
E6 - 12
40
30
an d
55
35
De
De vi c
s ice
50
d 70 A
De
vic
es
40
65
an
. .L
C RE
OG 1639
#E 7
Z NI
ED
le Fi
E7
TO-220 Isolated
A C
Rectifiers
(15 A to 25 A)
E7
General Description
Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock requirements. Teccor's silicon rectifiers feature glass-passivated junctions to ensure long term reliability and stability. In addition, glass offers a rugged, reliable barrier against junction contamination.
Features
Electrically-isolated packages High voltage capabilities 200 V to 1000 V High surge capabilities up to 350 A Glass-passivated junctions
E7 - 1
http://www.littelfuse.com + 1 972-580-7777
Rectifiers
Data Sheets
Part Number
Isolated
VRRM
VR
IF(AV)
(1)
IF(RMS)
IFSM
(2)
IRM
(3)
VFM
I2t
RJC
Type
C A
Not Used
Amps TO-220 See Package Dimensions section for variations. (4) D2015L D4015L D6015L D8015L DK015L D2020L D4020L D6020L D8020L DK020L D2025L D4025L D6025L D8025L DK025L Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 Amps MAX 9.5 9.5 9.5 9.5 9.5 12.7 12.7 12.7 12.7 12.7 15.9 15.9 15.9 15.9 15.9 Amps MAX 15 15 15 15 15 20 20 20 20 20 25 25 25 25 25 225/188 225/188 225/188 225/188 225/188 300/255 300/255 300/255 300/255 300/255 350/300 350/300 350/300 350/300 350/300 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 60/50 Hz TC = 25 C
mA TC = 100 C MAX 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 1 1 1 1 1 1 1 1 1 1 1 1 TC = 125 C
Volts TC=25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 210 210 210 210 210 374 374 374 374 374 508 508 508 508 508 Amps2Sec C/W TYP 2.85 2.85 2.85 2.85 2.85 2.5 2.5 2.5 2.5 2.5 2.7 2.7 2.7 2.7 2.7
15 A
20 A
25 A
Test Conditions
I2t RMS surge (non-repetitive) forward current for 8.3 ms for fusing IF(AV) Average forward current IF(RMS) RMS forward current IFSM Peak one-cycle surge current IRM Peak reverse current RJC Thermal resistance (steady state) junction to case VFM Peak forward voltage at rated average forward current VR DC blocking voltage VRRM Peak repetitive reverse voltage

(1) (2) (3) (4) See Figure E7.3 for current rating at specified case temperature. For more than one full cycle rating, see Figure E7.4. TC = TJ for test conditions See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number.
Electrical Isolation from Leads to Mounting Tab * V AC RMS 2500 4000
TO-220 Isolated Standard Optional **
General Notes
Operating temperature range (TJ) is -40 C to +125 C. Storage temperature range (TS) is -40 C to +125 C. Lead solder temperature is a maximum of 230 C for 10 seconds maximum at a minimum of 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown on dimensional outline drawings in the Package Dimensions section of this catalog. Teccor's electrically-isolated TO-220 devices withstand a high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range. Typical Reverse Recovery Time (trr) is 4 s. (Test conditions = 0.9 A forward current and 1.5 A reverse current.)
* UL Recognized File #E71639 ** For 4000 V isolation, use V suffix in the part number.
E7 - 2
Data Sheets
Rectifiers
140
Instantaneous Forward Current (iF) Amps
120
TC = 25C
Peak Surge (Non-repetitive) Forward Current (IFSM) Amps
1000 800 600 400 300 200 15 A Devices 20 A Devices 25 A Devices
100
25 A Devices
80
20 A Devices
60
100 80 60 40 30 20 10 1 2 4 6 10 20 40 60 100 200 400 600 1000 SUPPLY FREQUENCY: 60 Hz Sinewave LOAD: Resistive or Inductive RMS ON-STATE CURRENT: [IF(RMS)] Maximium Rated Value at Specified Case Temperature
40
15 A Devices
20 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Surge Current Duration Cycles
Instantaneous Forward Voltage (vF) Volts
Figure E7.1 Instantaneous Forward Current versus Forward Voltage (Typical)
Figure E7.4 Peak Surge Forward Current versus Surge Current Duration
20
Average Forward Power Dissipation [PF(AV)] Watts
SINGLE PULSE RECTIFICATION 60 Hz SINE WAVE 16
12
20 A Devices
8 15 A Devices 4 25 A Devices
0 0 2 4 6 8 10 12 14 16
Average Forward Current [IF(AV)] Amps
Figure E7.2 Forward Power Dissipation (Typical)
125
120 115 110 105 100
SUPPLY FREQUENCY: 60 Hz Sine Wave LOAD: Resistive or Inductive CASE TEMPERATURE: Measured As Shown on Dimensional Drawing
20 A Devices
25 A Devices
95
15 A Devices
90 85 80 75 70 0 0 2 4 6 8 10 12 14
16
Average Forward Current [IF (AV)] Amps
Figure E7.3 Maximum Allowable Case Temperature versus Average Forward Current
E7 - 3
Notes
E8
DO-35
DO-214
Diac
HT and ST Series
E8
General Description
Teccors HT and ST Series of bilateral trigger diacs offer a range of voltage characteristics from 27 V to 70 V. A diac semiconductor is a full-wave or bidirectional thyristor. It is triggered from a blocking state to a conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the diac. The Teccor line of diacs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccors glass offers a rugged, reliable barrier against junction contamination. The diac specifications listed in this data sheet are for standard products. Special parameter selections such as close tolerance voltage symmetry are available. Consult the factory for more information about custom design applications.
Features
Bilateral triggering device Glass-passivated junctions Wide voltage range selections
ST Series
Epoxy SMT package High-temperature, solder-bonded die attachment
HT Series
DO-35 trigger package Pre-tinned leads
E8 - 1
Diac
Data Sheets
Electrical Characteristics TC = 25C Part No.

VBO Breakover Voltage (Forward and Reverse) VBO Breakover Voltage Symmetry VBO = [ | +VBO | - | - VBO | ] Volts MAX 37 36 34 36 40 40 38 45 70 MAX 3 (1) 2 (1) 2 (1) 2 (1) 3 (1) 2 (1) 2 (1) 3 (1) 4 VBB Dynamic Breakback Voltage (3) | V | Volts MIN 10 (2) 7 at 10 mA (4) 7 at 10 mA (4) 10 (2) 10 (2) 7 at 10 mA (4) 10 (2) 10 (2) 20 (2) IBO Peak Breakover Current at Breakover Voltage Amps MAX 25 25 25 25 25 25 25 25 25 ITRM Peak Pulse Current for 10 s 120 PPS TA 40 C Amps MAX 2 2 2 2 2 2 2 2 1.5
DO-35 HT-32 HT-32A / HT-5761 HT-32B / HT-5761A HT-34B HT-35 HT-36A / HT-5762 HT-36B HT-40 HT-60
DO-214 ST-32 ST-32B ST-34B ST-35 ST-36A ST-36B ST-40
Volts MIN 27 28 30 32 30 32 34 35 56
General Notes
Lead solder temperature is +230 C for 10-second maximum; 1/16" (1.59 mm) from case. See Package Dimensions section of this catalog.
Current 10 mA

(1) (2) (3) Breakover voltage symmetry as close as 1 V is available from the factory on these products. See Figure E8.4 and Figure E8.5 for test circuit and waveforms. Typical switching time is 900 nano-seconds measured at IPK (Figure E8.4) across a 20 resistor (Figure E8.5). Switching time is defined as rise time of IPK between the 10% to 90% points. See V-I Characteristics.
-VBO
Breakover Current IBO
Voltage +VBO
(4)
Breakover Voltage VBO
Bilateral Trigger DIAC Specifications

Maximum Ratings, Absolute-Maximum Values Maximum Trigger Firing Capacitance: 0.1 F Device dissipation (at TA = -40 C to +40 C): 250 mW for DO-35 and 300 mW for DO-214 Derate above +40 C: 3.6 mW/C for DO-35 and 3 mW/C for DO-214 Temperature Ranges Storage: -40 C to +125 C Operating (Junction): -40 C to +125 C
V-I Characteristics
HT and ST Series Thermal Resistance Junction to Lead - RJL: C/W Junction to Ambient [RJA]: C/W (based on maximum lead temperature of 90 C for DO-214 and 85 C for DO-35 devices)
Y Package S Package
DO-35 100 [278] C/W
DO-214 65 C/W *
* Mounted on 1 cm2 copper foil surface; two-ounce copper foil
E8 - 2
Data Sheets
Diac
LOAD Up to 1500 W
3.3 k
Triac Q2015L5 200 k 120 V ac 60 Hz G
MT2
MT1
0.1 F 100 V
HT-35 Bilateral Trigger Diac
Figure E8.1 Typical Diac/Triac Full-wave Phase Control Circuit Using Lower Voltage Diacs.
10 5.0
Repetitive Peak On-state Current (ITRM) Amps
3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.05 0.03 0.02 .01 .005 .003 .002 .001
HT-32x, -34x, -35, -36x, -40 HT-5761, -5761A, -5762 ST-32x, -34x, -35, -36x, -40
HT-60
Safe Operating Area
PULSE REPETITION RATE = 120 pps TA = 40 C

1 2 4 6 10 20 40 60 100 200 400 6001000 2000 4000 10000
Base Pulse Duration s

Figure E8.2 Repetitive Peak On-state Current versus Pulse Duration
E8 - 3
Diac
Data Sheets
+8
+6 +4 +2 HT Series 0 -2 -4 -6 -8 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 ST Series
47 k
*
100 k D.U.T. RL VC CT 0.1 F IL 20 1%
120 V rms 60 Hz
* Adjust for one firing in each half cycle. D.U.T. = Diac
Figure E8.3 Normalized VBO Change versus Junction Temperature
Figure E8.5 Circuit Used to Measure Diac Characteristics (Refer to Figure E8.4.)
V +V
BO
300
Peak Output Current (IPK) mA
V+
250
200
e vic )
V-V
BO
150
Ty pic al
V (35
De
I +I
PK
100
50
0
-I
.01 .02 .03 .04 .05 .06 .07 .08 .09 .10
PK
Triggering Capacitance (CT) F

Typical pulse base width is 10 s
Figure E8.4 Test Circuit Waveforms (Refer to Figure E8.5.)
Figure E8.6 Peak Output Current versus Triggering Capacitance (Per Figure E8.5 with RL of 20 )
E8 - 4
E9
DO-15X
DO-214 Surface Mount TO-92 Type 70 TO-202
Sidac
(79 V to 330 V)
E9
General Description
The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. Teccors sidacs feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.
Applications
High-voltage lamp ignitors Natural gas ignitors Gas oil ignitors High-voltage power supplies Xenon ignitors Overvoltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors
Features
AC circuit oriented Glass-passivated junctions High surge current capability
E9 - 1
Sidac
Data Sheets
Part No.
(10)
Do not use tab
IT(RMS)
(6) (7) (8)
VDRM
VBO
(1)
IDRM
IBO
(2)
IH
(3) (4)
Type
Pin 1
Pin 3
TO-92
DO-15X
Pin 2 Do not use
TO-202
DO-214 Amps MAX 1 1 1 1 1 1 1 1 1 1 1 1 K0900S K1050S K1100S K1200S K1300S K1400S K1500S Volts MIN 70 90 90 90 90 90 90 180 180 190 200 200 MIN 79 95 104 110 120 130 140 190 205 220 240 270 Volts MAX 97 113 118 125 138 146 170 215 230 250 280 330 Amps MAX 5 5 5 5 5 5 5 5 5 5 5 5 Amps MAX 10 10 10 10 10 10 10 10 10 10 10 10 mAmps TYP 60 60 60 60 60 60 60 60 60 60 60 60 MAX 150 150 150 150 150 150 150 150 150 150 150 150
See Package Dimensions section for variations. (9) K0900E70 K1050E70 K1100E70 K1200E70 K1300E70 K1400E70 K1500E70 K2000E70 K2200E70 K2400E70 K2500E70 K0900G K1050G K1100G K1200G K1300G K1400G K1500G K2000G K2200G K2400G K2500G K2000F1 K2200F1 K2400F1 K2500F1 K3000F1
K2000S K2200S K2400S K2500S

di/dt Critical rate-of-rise of on-state current dv/dt Critical rate-of-rise of off-state voltage at rated VDRM; TJ 100 C IBO Breakover current 50/60 Hz sine wave IDRM Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM IH Dynamic holding current 50/60 Hz sine wave; R = 100 IT(RMS) On-state RMS current TJ 125 C 50/60 Hz sine wave ITSM Peak one-cycle surge current 50/60 Hz sine wave (nonrepetitive) RS Switching resistance R

(1) (2) (3) (4) (5) (6) See 4 for VBO change versus junction temperature. See 4 for IBO versus junction temperature. See 3 for IH versus case temperature. See 5 for test circuit. See 3 for more than one full cycle rating. TC 90 C for TO-92 Sidac TC 105 C for TO-202 Sidacs TL 100 C for DO-15X TL 90 C for DO-214 See 5 for clarification of sidac operation. For best sidac operation, the load impedance should be near or less than switching resistance. See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number.
(V V ) BO S = ------------------------------- 50/60 Hz sine wave ( I I BO ) S
(7) (8) (9)
VBO Breakover voltage 50/60 Hz sine wave VDRM Repetitive peak off-state voltage VTM Peak on-state voltage; IT = 1 A
(10) Do not use electrically connected mounting tab or center lead.

+I IT IH IS IDRM IBO +V VBO VS VDRM RS
General Notes
All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless otherwise specified. Storage temperature range (TS) is -65 C to +150 C. The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline drawings in the Package Dimensions section of this catalog. Junction temperature range (TJ) is -40 C to +125 C. Lead solder temperature is a maximum of +230 C for 10 s maximum; 1/16" (1.59 mm) from case.
RS = (VBO - VS) (IS - IBO)
-V
VT
-I
V-I Characteristics
E9 - 2
Data Sheets
Sidac
LK
VTM
ITSM
(5)
RS
(8)
dv/dt
di/dt
Volts MAX Package E 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 G 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 3 3 3 3 3 F S 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 20 20 20 20 20 20 20 20 20 20 20 20 60 Hz
Amps 50 Hz 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 k MIN 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Volts/Sec MIN 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 Amps/Sec TYP 150 150 150 150 150 150 150 150 150 150 150 150
Thermal Resistance (Steady State) RJC [RJA] C/W (TYPICAL) *

E Package G Package F Package S Package
IH IH(TC = 25 C) Ratio of
2.0
1.5
1.0 .5 0
35 [95]
18 [75]
7 [45] **
30 *** [85]
* See Electrical Specification Note (6). ** RJA for TO-202 Type 23 and Type 41 is 70 C/Watt. *** Mounted on 1 cm2 copper foil surface; two-ounce copper foil
-40
-15
+25
+65
+105
+125
100
Peak Surge (Non-repetitive) On-state Current [ITSM] Amps
40
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature
Figure E9.2 Normalized DC Holding Current versus Case/Lead Temperature
20 10 8.0 6.0 4.0

Notes: 1) Blocking capability may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
2.0 1.0
1.0
10
100
1000
E9 - 3
Sidac
Data Sheets
600 400
di/dt Limit Line

No n-R ep
ITRM VBO Firing Current Waveform
Repetitive Peak On-state Current (ITRM) Amps
200 100 80 60 40 20 10 8 6 4 2 1 0.8 0.6 4

2 x 10-3
f=
ea
ted
pe titi
on
l/f
Fr eq ue nc
f=
10
f=
10
Hz
0H
yf
=5
Repetitive Peak Breakover Current (IBO) Multiplier
Re
to
9 8 7 6 5 4 3 2
Hz
V = VBO
1k
TJ = 125 C Max
Hz
f=
f=
f=2
5k
10
Hz
kH
1 20 30 40 50 60 70 80 90 100 110 120 130
0 kH
6 8
1 x 10-2
6 8
1 x 10-1
4 6 81
Pulse base width (to) ms

Figure E9.3 Repetitive Peak On-state Current (I TRM) versus Pulse Width at Various Frequencies Figure E9.6 Normalized Repetitive Peak Breakover Current versus Junction Temperature
9
CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING
140
TL = 25 C 8
120
7 6 5 4 3 2 1 0
TO-202 "F" Package TO-92, DO-214 and DO-15X "E", "S" and "G" Packages
100
TO -20 2
80
DO
-1
Ty pe 1
60
5X
TO
an
dT
-9
O-
an
20
40
DO
2T yp
-2
e2
14
3a
nd
41
25 20 0 0.2 0.4 0.6 0.8 1.0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2 2.4
2.6
2.8
3.0
3.2
3.4
3.6
Figure E9.7 On-state Current versus On-state Voltage (Typical)
+4
K2xxxF1
2.2 2.0 Average On-state Power Dissipation [PD(AV)] Watts 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
+2
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Basic Sidac Cirucit
0 -2 -4 -6 -8 -10 -12 -40 -20 0

K2xxxE K2xxxG K2xxxS K1xxxE K1xxxG K1xxxS
TO-202 "F" Package
"E", "S" and "G" Packages TO-92, DO-214 and DO-15X
+25
+20
+40
+60
+80
+100
+120 +140
0.2
0.4
0.6
0.8
1.0
Figure E9.5 Normalized VBO Change versus Junction Temperature
Figure E9.8 Power Dissipation (Typical) versus On-state Current [Refer to 5 for Basic Sidac Circuit]
E9 - 4
Data Sheets
Sidac
SCR
Sidac
100 2W
10 F
Xenon Lamp
250 V K2200G
20 M
100-250 V ac 60 Hz
100-250 V ac 60 Hz
+ 10 F - 450 V
120 V ac 60 Hz
4 kV Sidac 200400 V Trigger Transformer 20:1 0.01 F 400 V
Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit
Figure E9.12 Xenon Lamp Flashing Circuit
Push to test
4.7 F 10 F 100 V
S1
4.7 k
Switch to test in each direction
50 V
+
W
100-250 V ac 60 Hz
K1200E Sidac 200 V
100 1%
Device Under Test
+ 24 V ac 60 Hz
4.7 F 100 V
1.2 F
S1
Scope
IPK
Trace Stops
H.V. Ignitor
IH
Scope Indication
Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition
Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs
Ballast
Ballast
Sidac 3.3 k
0.47 F 400 V Lamp
Sidac 7.5 k
0.22 F Lamp
100-250 V ac 60 Hz
VBO
VBO VBO
IH
Load IH
120 V ac 60 Hz 16 mH
220 V ac 60 Hz
120-145 Conduction Angle
IH
Load Current
120 V ac
220 V ac
Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit
Figure E9.14 Basic Sidac Circuit
E9 - 5
Sidac
Data Sheets
(a) Circuit V R SIDAC V DC(IN) V B0 V C t R L I V C (b) Waveforms BO
I L
Rmax R min
-V IN BO IBO
-V IN TM IH (MIN)
Figure E9.15 Relaxation Oscillator Using a Sidac
VCE Monitor (See Note B) RBB1 = 150 TIP-47 100 mH
Input Voltage 0V 5V Collector Current 0.63 A 0
tw 3 ms (See Note A) tw 100 ms
Input 50
2N6127 (or equivalent)
50
RBB2 = 100
+ VCC = 20 V RS = 0.1 IC Monitor
Sidac VBO Collector Voltage 10 V VCE(sat)
+ VBB2 =0 VBB1 =10 V -
Test Circuit
Voltage and Current Waveforms
Note A: Input pulse width is increased until ICM = 0.63 A. Note B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements
E9 - 6

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TO-252 D-Pak TO-202 TO-251 V-Pak

Compak Sensitive Gate Triac

2004 Littelfuse, Inc. Thyristor Product Catalog

Part No. IT(RMS)

L2N3 L4N3 L6N3 L2N5 L4N5 L6N5

See General Notes on page E1 - 4 and Electrical Specification Notes on page E1 - 5.

2004 Littelfuse, Inc. Thyristor Product Catalog

Volts/Sec TC = 100 C TYP 20 15 10 20 15 10 30 25 20 35 30 25 20 20 10 20 20 10 30 30 20 35 35 25 25 25 15 25 25 15 30 30 20 35 35 25

See General Notes on page E1 - 4 and Electrical Specification Notes on page E1 - 5.

2004 Littelfuse, Inc. Thyristor Product Catalog

Part No. IT(RMS)

mAmps QII QIII MAX 5 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 5 5 5 5 5 5 10 10 10 10 10 10

Specified Test Conditions

2004 Littelfuse, Inc. Thyristor Product Catalog

Volts/Sec TC = 100 C TYP 40 30 20 40 30 20 45 40 30 40 30 20 45 40 30

Sec TYP 3 3 3 3 3 3 3.2 3.2 3.2 3 3 3 3.2 3.2 3.2

Amps2Sec 15 15 15 15 15 15 15 15 15 26.5 26.5 26.5 26.5 26.5 26.5

Electrical Specification Notes

MT2 IGT GATE

IGT GATE MT1

REF MT2 IGT GATE MT1 REF

QII QI QIII QIV

MT2 NEGATIVE (Negative Half Cycle)

2004 Littelfuse, Inc. Thyristor Product Catalog

Electrical Isolation from Leads to Mounting Tab

TO-92 Plastic 0.8 A 1A 4A 6A 8A 60 [135] 50 [95]

3.6 [50] 3.3 2.8

3.5 3.2 2.7

6.0 [70] 3.2 2.7

* Mounted on 1 cm2 copper foil surface; two-ounce copper foil

Maximum Allowable Ambient Temperature (TA) - C

Maximum Allowable Case Temperature (TC) C

TYPE 2 and 4 TO-202 and TO-251

60 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS On-State Current [IT(RMS)] Amps

RMS On-State Current [IT(RMS)] - Amps

Figure E1.1 Maximum Allowable Ambient Temperature versus On-state Current

2004 Littelfuse, Inc. Thyristor Product Catalog

Maximum Allowable Case Temperature (TC) - C

110 105 100 95 90 85 80 75 70 65 60 0 1 2 3 4 5 6 7 8

TO TO -25 8A 1a -22 nd TO 0( TO -22 Iso -25 0( 2 lat Iso ed late ) d)

0 -65 -40 -15 +25 +65 +110 +125

RMS On-State Current [IT(RMS)] - Amps

Case Temperature (TC) - C

Positive or Negative Instantaneous On-state Current (iT) - Amps

16 14 12 10 8 6 4 2 0 0 0.5 0.8 1.0 1.2 1.4 1.6 1.8 0.8 A 4A 1A 6 A and 8 A

0 -65 -40 -15 +25 +65 +110 +125

Positive or Negative Instantaneous On-state Voltage (vT) - Volts

Case Temperature (TC) - C

Figure E1.4 On-state Current versus On-state Voltage (Typical)

Turn-On Time (tgt) - Sec

5.0 IGT = 10 mA MAX

0 -65 -40 -15 +25 +65 +110 +125

Case Temperature (TC) - C

DC Gate Trigger Current (IGT) - mA

Figure E1.5 Normalized DC Holding Current versus Case Temperature

Figure E1.8 Turn-on Time versus Gate Trigger Current (Typical)

2004 Littelfuse, Inc. Thyristor Product Catalog

200 150 100 80 60 40 30 20 10 8 6 4 3 2 1 1 2 3 4 6 8 10 20 30 40 60 100 200 400 600 1000

Peak Surge (Non-Repetitive) On-State Current (ITSM) Amps

Surge Current Duration Full Cycles