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    Organometallic Vapor-Phase Epitaxy: Theory and Practice
    Organometallic Vapor-Phase Epitaxy: Theory and Practice
    Organometallic Vapor-Phase Epitaxy: Theory and Practice
    Ebook365 pages9 hours

    Organometallic Vapor-Phase Epitaxy: Theory and Practice

    By Gerald B. Stringfellow

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    About this ebook

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
    LanguageEnglish
    PublisherAcademic Press
    Release dateDec 2, 2012
    ISBN9780323139175
    Organometallic Vapor-Phase Epitaxy: Theory and Practice
    Author

    Gerald B. Stringfellow

    Stringfellow was among the pioneers of the organometallic vapor phase epitaxial (OMVPE) growth technique, beginning his work in this area in 1975. He has published over 150 papers on this subject and delivered 30 invited papers at national and international conferences during the last 5 years. This work emphasizes the materials science aspects of OMVPE growth, including the thermodynamic and kinetic aspects of the process, the development of new source materials, and the growth of metastable alloys. The first epitaxial layers of InAsSb in the range of solid immiscibility. InPSb, GaPSb, GaInPSb, GaInAsSb, InAsBi, InSbBi, and InAsSbBi, inside the miscibility gap, were produced in Stringfellow’s group. The growth of immiscible alloys has led to the discovery of atomic scale ordering in many III/V alloys. He and his students recently demonstrated the control of domain size in these ordered materials by using grooves photolithographically produced on the (001) surface. This had resulted in the largest ordered domains ever produced in semiconductor materials. Current research focuses on the ordering mechanism, particularly the effects of surface structure on ordering.Other important work is involved with the development of new procedures for OMVPE. He and his students pioneered the now widely-used tertiarybutylarsine and tertiarybutylphosphine. They also used several other precursors for the first time, including: ethyldimethylindium, triisopropylantimony, triallylantimony, trivinylantimony, and tertiarybutyldimethylantimony.

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